Ion Implantation

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Ion Implantation and Synthesis of Materials

Michael Nastasi,James W. Mayer
Ion Implantation and Synthesis of Materials Book PDF

Author : Michael Nastasi,James W. Mayer
Publisher : Springer Science & Business Media
Page : 271 pages
File Size : 45,7 Mb
Release : 2007-05-16
Category : Science
ISBN : 9783540452980

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Ion Implantation and Synthesis of Materials by Michael Nastasi,James W. Mayer Pdf

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion Implantation Science and Technology

J.F. Ziegler
Ion Implantation Science and Technology Book PDF

Author : J.F. Ziegler
Publisher : Elsevier
Page : 648 pages
File Size : 53,7 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780323144018

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Ion Implantation Science and Technology by J.F. Ziegler Pdf

Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Ion Implantation: Basics to Device Fabrication

Emanuele Rimini
Ion Implantation Basics to Device Fabrication Book PDF

Author : Emanuele Rimini
Publisher : Springer Science & Business Media
Page : 400 pages
File Size : 55,5 Mb
Release : 2013-11-27
Category : Technology & Engineering
ISBN : 9781461522591

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Ion Implantation: Basics to Device Fabrication by Emanuele Rimini Pdf

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Ion Implantation in Diamond, Graphite and Related Materials

M.S. Dresselhaus,R. Kalish
Ion Implantation in Diamond Graphite and Related Materials Book PDF

Author : M.S. Dresselhaus,R. Kalish
Publisher : Springer Science & Business Media
Page : 212 pages
File Size : 51,6 Mb
Release : 2013-03-08
Category : Science
ISBN : 9783642771712

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Ion Implantation in Diamond, Graphite and Related Materials by M.S. Dresselhaus,R. Kalish Pdf

Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.

Ion Implantation

A. D. Pogrebnjak
Ion Implantation Book PDF

Author : A. D. Pogrebnjak
Publisher : Nova Science Publishers
Page : 334 pages
File Size : 40,6 Mb
Release : 2018-09
Category : SCIENCE
ISBN : 1536139637

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Ion Implantation by A. D. Pogrebnjak Pdf

"New results in the field of ion implantation from the experienced scientists from different countries are presented in this book. Influence of ion implantation on structure and properties of semi-conducting materials, instrumental steels and alloys, nanocomposite coatings, including multielement ones, titanium alloys with the shape memory effect and super-elasticity are discussed in detail within this book. New data on novel applications of ion implantation for the modification and testing (radiation hardness simulation) of memristive devices, as well as application of ion implantation of group V dopants in the MCT epilayer are presented in this book. Potential use of ion implantation for the synthesis of Ag nanoparticles in a thin Si layer for the development of thin-film solar cells fabrication technology is discussed. The effect of ion implantation on the physical and mechanical properties of the hard alloy plates based on tungsten carbide and a cobalt binder is described. A study of the effects of ion implantation on the phase composition and the structure of materials is presented. The role of defects in the formation of the phase composition of the ion-implanted materials, structural-phase transformations in metals after ion implantation is investigated. This book will be interesting for professionals in the study of solid state physics, nuclear physics, physics of semi-conductors and nanomaterials. It can also be useful for masters and PhD students, as well as for professionals researching the fabrication and investigation of protective materials with enhanced physical-mechanical and tribological properties, good biocompatibility and resistance to irradiation"--

Radioactive Ion Implantation of Thermoplastic Elastomers

Veronica Borcea
Radioactive Ion Implantation of Thermoplastic Elastomers Book PDF

Author : Veronica Borcea
Publisher : Presses univ. de Louvain
Page : 190 pages
File Size : 42,9 Mb
Release : 2008
Category : Science
ISBN : 2874631272

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Radioactive Ion Implantation of Thermoplastic Elastomers by Veronica Borcea Pdf

The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application of RII to control the wear of polymers is potentially of interest, but it has been lagging behind because of uncertainties related to possible changes in material properties during and after the implantation, and to the exact shape of implantation profiles. In this thesis, we investigate these issues on two thermoplastic elastomers, among which one contains radiation-sensitive unsaturated bonds, using as ions 7Be, 7Li and Kr. The results of the sample characterisation indicate that the 7Be and 7Li implantations, under properly-selected conditions, do not induce significant modifications in the materials. The implantation of a stack of polymer thin films and the activity measurements performed to determine the implantation profile are also presented. The experimental results on the ion implantation profiles and the determination of calibration curves are presented and discussed in comparison with simulated results. The results indicate that it is possible to predict the implantation profile by means of simulations. This bodes well for the application of the RII method to polymer materials. An experimental study is presented regarding the possible redistribution of the implanted 7Be after implantation. Since very few existing experimental techniques are able to detect light elements implanted in polymer targets at fluences less or equal to 1012 cm-2, with implantation depths of a few μm, a new method is presented, which implies the use of plasma etching techniques in order to remove layers of polymers and measuring the remaining activity after each step. Our results indicate that a redistribution of the implanted ions takes place during the implantation process, resulting in a scrambling of the initial implantation profile. Nevertheless, provided a suitable methodology be used, wear measurements in polymers by using the RII method are still possible, as we propose in the thesis.

Ion Implantation

Ishaq Ahmad
Ion Implantation Book PDF

Author : Ishaq Ahmad
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 54,6 Mb
Release : 2017-06-14
Category : Science
ISBN : 9789535132370

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Ion Implantation by Ishaq Ahmad Pdf

Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.

Ion-Solid Interactions

Michael Nastasi,James W. Mayer,James K. Hirvonen
Ion Solid Interactions Book PDF

Author : Michael Nastasi,James W. Mayer,James K. Hirvonen
Publisher : Cambridge University Press
Page : 572 pages
File Size : 41,9 Mb
Release : 1996-03-29
Category : Science
ISBN : 9780521373760

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Ion-Solid Interactions by Michael Nastasi,James W. Mayer,James K. Hirvonen Pdf

Comprehensive guide to an important materials science technique for students and researchers.

Ion Implantation

Mark Goorsky
Ion Implantation Book PDF

Author : Mark Goorsky
Publisher : BoD – Books on Demand
Page : 452 pages
File Size : 44,8 Mb
Release : 2012-05-30
Category : Science
ISBN : 9789535106340

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Ion Implantation by Mark Goorsky Pdf

Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.

Ion Implantation Technology - 94

S. Coffa,G. Ferla,E. Rimini,F. Priolo
Ion Implantation Technology 94 Book PDF

Author : S. Coffa,G. Ferla,E. Rimini,F. Priolo
Publisher : Newnes
Page : 1030 pages
File Size : 44,5 Mb
Release : 1995-05-16
Category : Science
ISBN : 9780444599728

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Ion Implantation Technology - 94 by S. Coffa,G. Ferla,E. Rimini,F. Priolo Pdf

The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Ion Implantation Technology - 92

D.F. Downey,M. Farley,K.S. Jones,G. Ryding
Ion Implantation Technology 92 Book PDF

Author : D.F. Downey,M. Farley,K.S. Jones,G. Ryding
Publisher : Elsevier
Page : 716 pages
File Size : 52,5 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780444599803

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Ion Implantation Technology - 92 by D.F. Downey,M. Farley,K.S. Jones,G. Ryding Pdf

Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

Ion Implantation and Activation

Kunihiro Suzuki
Ion Implantation and Activation Book PDF

Author : Kunihiro Suzuki
Publisher : Bentham Science Publishers
Page : 171 pages
File Size : 44,5 Mb
Release : 2013-11-05
Category : Technology & Engineering
ISBN : 9781608057900

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Ion Implantation and Activation by Kunihiro Suzuki Pdf

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Ion Implantation Techniques

H. Ryssel,H. Glawischnig
Ion Implantation Techniques Book PDF

Author : H. Ryssel,H. Glawischnig
Publisher : Springer Science & Business Media
Page : 377 pages
File Size : 43,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642687792

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Ion Implantation Techniques by H. Ryssel,H. Glawischnig Pdf

In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Ion Implantation Into Metals

V. Ashworth,W A Grant,R P M Procter
Ion Implantation Into Metals Book PDF

Author : V. Ashworth,W A Grant,R P M Procter
Publisher : Elsevier
Page : 384 pages
File Size : 53,5 Mb
Release : 2016-04-20
Category : Technology & Engineering
ISBN : 9781483280189

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Ion Implantation Into Metals by V. Ashworth,W A Grant,R P M Procter Pdf

Ion Implantation into Metals presents the proceedings of the 3rd International Conference on the Modification of Surface Properties of Metals by Ion Implantation, held at UMIST, Manchester, UK on June 23-26, 1981. The book includes papers on aqueous corrosion of ion-implanted iron; the mechanical properties and high temperature oxidation behavior in aqueous corrosion; and the potential of ion beam processing in this field of materials science and engineering. The text also presents papers on the important scientific progress in metal physics and related subjects.

Ion Implantation in Semiconductors

Ingolf Ruge,J. Graul
Ion Implantation in Semiconductors Book PDF

Author : Ingolf Ruge,J. Graul
Publisher : Springer Science & Business Media
Page : 519 pages
File Size : 42,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642806605

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Ion Implantation in Semiconductors by Ingolf Ruge,J. Graul Pdf

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.