Layout Techniques In Mosfets

Author : Salvador Pinillos Gimenez
Publisher : Morgan & Claypool Publishers
Page : 83 pages
File Size : 54,5 Mb
Release : 2016-03-24
Category : Technology & Engineering
ISBN : 9781627054829

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Layout Techniques for MOSFETs by Salvador Pinillos Gimenez Pdf

This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.

Author : Salvador Pinillos Gimenez
Publisher : Springer Nature
Page : 69 pages
File Size : 44,7 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020315

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Layout Techniques in MOSFETs by Salvador Pinillos Gimenez Pdf

This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.

Author : Salvador Pinillos Gimenez,Egon Henrique Salerno Galembeck
Publisher : Springer Nature
Page : 216 pages
File Size : 41,8 Mb
Release : 2023-05-05
Category : Technology & Engineering
ISBN : 9783031290862

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Differentiated Layout Styles for MOSFETs by Salvador Pinillos Gimenez,Egon Henrique Salerno Galembeck Pdf

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

Author : R. Jacob Baker
Publisher : John Wiley & Sons
Page : 1074 pages
File Size : 46,6 Mb
Release : 2008
Category : Technology & Engineering
ISBN : 9780470229415

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CMOS by R. Jacob Baker Pdf

This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.

Author : Márcio Cherem Schneider,Carlos Galup-Montoro
Publisher : Cambridge University Press
Page : 505 pages
File Size : 48,7 Mb
Release : 2010-01-28
Category : Computers
ISBN : 9780521110365

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CMOS Analog Design Using All-Region MOSFET Modeling by Márcio Cherem Schneider,Carlos Galup-Montoro Pdf

The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Author : Carlos Galup-Montoro,M rcio Cherem Schneider
Publisher : World Scientific
Page : 445 pages
File Size : 42,7 Mb
Release : 2007
Category : Technology & Engineering
ISBN : 9789812568106

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MOSFET Modeling for Circuit Analysis and Design by Carlos Galup-Montoro,M rcio Cherem Schneider Pdf

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 48,8 Mb
Release : 2024-07-01
Category : Electronic
ISBN : 9789814477970

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Mosfet Modeling for Circuit Analysis and Design by Anonim Pdf

Author : Samar K. Saha
Publisher : CRC Press
Page : 548 pages
File Size : 45,6 Mb
Release : 2018-09-03
Category : Technology & Engineering
ISBN : 9781482240672

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Compact Models for Integrated Circuit Design by Samar K. Saha Pdf

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Author : David Binkley
Publisher : John Wiley & Sons
Page : 632 pages
File Size : 42,7 Mb
Release : 2008-09-15
Category : Technology & Engineering
ISBN : 9780470033692

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Tradeoffs and Optimization in Analog CMOS Design by David Binkley Pdf

Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Author : J. A. Martino,J. P. Raskin,S. Selberherr,H. Ishii,F. Gamiz,B. Y. Nguyen,A. Yoshino
Publisher : The Electrochemical Society
Page : 230 pages
File Size : 42,5 Mb
Release : 2018-05-04
Category : Science
ISBN : 9781607688365

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Advanced CMOS-Compatible Semiconductor Devices 18 by J. A. Martino,J. P. Raskin,S. Selberherr,H. Ishii,F. Gamiz,B. Y. Nguyen,A. Yoshino Pdf

Author : Arvind Raghavan,Nuttapong Srirattana,Joy Laskar
Publisher : John Wiley & Sons
Page : 218 pages
File Size : 40,6 Mb
Release : 2008-01-09
Category : Technology & Engineering
ISBN : 9780471717461

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Modeling and Design Techniques for RF Power Amplifiers by Arvind Raghavan,Nuttapong Srirattana,Joy Laskar Pdf

Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.

Author : Cheng Wang
Publisher : Springer Science & Business Media
Page : 345 pages
File Size : 44,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468485479

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Hot Carrier Design Considerations for MOS Devices and Circuits by Cheng Wang Pdf

As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Author : Arijit Saha,Nilotpal Manna
Publisher : Laxmi Publications
Page : 612 pages
File Size : 43,9 Mb
Release : 2013-03
Category : Computers
ISBN : 9788131806210

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Digital Principles and Logic Design Techniques by Arijit Saha,Nilotpal Manna Pdf

Author : Sanjiv Sambandan
Publisher : CRC Press
Page : 259 pages
File Size : 54,9 Mb
Release : 2012-10-16
Category : Science
ISBN : 9781439846339

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Circuit Design Techniques for Non-Crystalline Semiconductors by Sanjiv Sambandan Pdf

Despite significant progress in materials and fabrication technologies related to non-crystalline semiconductors, fundamental drawbacks continue to limit real-world application of these devices in electronic circuits. To help readers deal with problems such as low mobility and intrinsic time variant behavior, Circuit Design Techniques for Non-Cryst

Author : Hisham Haddara
Publisher : Springer Science & Business Media
Page : 240 pages
File Size : 41,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461313557

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Characterization Methods for Submicron MOSFETs by Hisham Haddara Pdf

It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.