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Author : Edmundo Gutierrez
Publisher : Unknown
Page : 800 pages
File Size : 44,8 Mb
Release : 2000
Category : Technology & Engineering
ISBN : 0780347218
Author : Edmundo A. Gutierrez-D.,M. Jamal Deen,Cor L. Claeys
Publisher : Academic Press
Page : 985 pages
File Size : 49,9 Mb
Release : 2001
Category : Cryoelectronics
ISBN : 9780123106759
Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Author : Vinod Kumar Khanna
Publisher : Unknown
Page : 0 pages
File Size : 51,6 Mb
Release : 2017
Category : Circuits
ISBN : 0750311576
"Electronic devices and circuits are employed by a range of industries in testing conditions from extremes of high- or low-temperature, in chemically corrosive environments, subject to shock and vibration or exposure to radiation. This book describes the diverse measures necessary to make electronics capable of coping with such situations as well as to gainfully exploit any new phenomena that take place only under these conditions."--Prové de l'editor.
Author : Cor L. Claeys
Publisher : The Electrochemical Society
Page : 418 pages
File Size : 47,5 Mb
Release : 1997
Category : Technology & Engineering
ISBN : 1566771293
Author : V K Khanna
Publisher : Myprint
Page : 490 pages
File Size : 41,7 Mb
Release : 2017-03-30
Category : Electronic
ISBN : 0750319615
Author : United States. Office of State Technical Services
Publisher : Unknown
Page : 76 pages
File Size : 41,6 Mb
Release : 1965
Category : Technology
ISBN : UIUC:30112101025556
Author : Francis Balestra,G. Ghibaudo
Publisher : Springer Science & Business Media
Page : 267 pages
File Size : 52,9 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781475733181
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Author : John W. Dean
Publisher : Unknown
Page : 80 pages
File Size : 44,8 Mb
Release : 1961
Category : Hydrogen
ISBN : UOM:39015086565077
Author : Randall K. Kirschman
Publisher : Unknown
Page : 512 pages
File Size : 46,7 Mb
Release : 1986
Category : Technology & Engineering
ISBN : STANFORD:36105030431535
Author : Pradeep Lall,Michael Pecht,Edward B. Hakim
Publisher : CRC Press
Page : 327 pages
File Size : 49,5 Mb
Release : 2020-07-09
Category : Technology & Engineering
ISBN : 9780429611117
This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Author : Robert Joseph Corruccini,John J. Gniewek
Publisher : Unknown
Page : 32 pages
File Size : 51,5 Mb
Release : 1960
Category : Materials at low temperatures
ISBN : UCSD:31822013151477
Author : United States. Office of State Technical Services
Publisher : Unknown
Page : 452 pages
File Size : 42,8 Mb
Release : 1966
Category : Electronic
ISBN : IND:30000121839025
Author : Lawrence Herman Bennett,Van M. Johnson
Publisher : Unknown
Page : 10 pages
File Size : 44,7 Mb
Release : 1959
Category : Bridge circuits
ISBN : UOM:39015077290008
The conventional AC bridge gives irregular performance including loss of temperature control when the temperature error exceeds a certain critical value. The present note describes a simple method of achieving stable temperature control over a large range of temperatures.
Author : Robert Joseph Corruccini,John J. Gniewek
Publisher : Unknown
Page : 34 pages
File Size : 53,6 Mb
Release : 1961
Category : Science
ISBN : UIUC:30112053569064
Author : Ladislaus Marton
Publisher : Unknown
Page : 48 pages
File Size : 43,8 Mb
Release : 1963
Category : Electron optics
ISBN : IND:30000090032594
The goal of this work was to develop and demonstrate the suitability of electron optical techniques for recording the spatial distribution of gas molecules at fixed times with sufficient accuracy that the velocity distribution could be derived. The work concentrated on the properties of chopped molecular beam pulse correspond to a pressure of less than 10 to the minus 7th power Torr. The project was successful. During the course of this program, equipment was built, methods of operation were developed, the theory of the electron optical schlieren was developed in some detail, and ways of efficiently converting the data obtained into velocity distributions of the gas molecule were investigated.
