Modeling And Characterization Of Rf And Microwave Power Fets

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Modeling and Characterization of RF and Microwave Power FETs

Author : Peter Aaen,Jaime A. Plá,John Wood
Publisher : Cambridge University Press
Page : 375 pages
File Size : 48,7 Mb
Release : 2007-06-25
Category : Technology & Engineering
ISBN : 9781139468121

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Modeling and Characterization of RF and Microwave Power FETs by Peter Aaen,Jaime A. Plá,John Wood Pdf

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Modeling and Characterization of RF and Microwave Power FETs

Author : Aaen Peter H Plau Jaime a Wood John,Peter H. Aaen,Jaime A. Pla ́,John Wood (Principal research & development electronic engineer)
Publisher : Unknown
Page : 380 pages
File Size : 47,9 Mb
Release : 2014-05-14
Category : Technology & Engineering
ISBN : 0511378513

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Modeling and Characterization of RF and Microwave Power FETs by Aaen Peter H Plau Jaime a Wood John,Peter H. Aaen,Jaime A. Pla ́,John Wood (Principal research & development electronic engineer) Pdf

CMOS RF Modeling, Characterization and Applications

Author : M. Jamal Deen,Tor A. Fjeldly
Publisher : World Scientific
Page : 426 pages
File Size : 48,5 Mb
Release : 2002
Category : Science
ISBN : 9810249055

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CMOS RF Modeling, Characterization and Applications by M. Jamal Deen,Tor A. Fjeldly Pdf

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Handbook of RF and Microwave Power Amplifiers

Author : John L. B. Walker
Publisher : Cambridge University Press
Page : 705 pages
File Size : 42,8 Mb
Release : 2012
Category : Technology & Engineering
ISBN : 9780521760102

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Handbook of RF and Microwave Power Amplifiers by John L. B. Walker Pdf

This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Behavioral Modeling and Linearization of RF Power Amplifiers

Author : John Wood
Publisher : Artech House
Page : 379 pages
File Size : 53,7 Mb
Release : 2014-06-01
Category : Technology & Engineering
ISBN : 9781608071203

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Behavioral Modeling and Linearization of RF Power Amplifiers by John Wood Pdf

Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved. This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers are also provided with mathematical approaches to modeling nonlinear dynamical systems, which can be applied in the context of modeling the PA for identification in a pre-distortion system. This book also describes typical approaches to linearization and digital pre-distortion that are used in practice.

Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers

Author : Jingchang Nan,Mingming Gao
Publisher : CRC Press
Page : 217 pages
File Size : 40,8 Mb
Release : 2021-07-30
Category : Technology & Engineering
ISBN : 9781000409598

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Nonlinear Modeling Analysis and Predistortion Algorithm Research of Radio Frequency Power Amplifiers by Jingchang Nan,Mingming Gao Pdf

This book is a summary of a series of achievements made by the authors and colleagues in the areas of radio frequency power amplifier modeling (including neural Volterra series modeling, neural network modeling, X-parameter modeling), nonlinear analysis methods, and power amplifier predistortion technology over the past 10 years. The book is organized into ten chapters, which respectively describe an overview of research of power amplifier behavioral models and predistortion technology, nonlinear characteristics of power amplifiers, power amplifier behavioral models and the basis of nonlinear analysis, an overview of power amplifier predistortion, Volterra series modeling of power amplifiers, power amplifier modeling based on neural networks, power amplifier modeling with X-parameters, the modeling of other power amplifiers, nonlinear circuit analysis methods, and predistortion algorithms and applications. Blending theory with analysis, this book will provide researchers and RF/microwave engineering students with a valuable resource.

GaN Transistor Modeling for RF and Power Electronics

Author : Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan
Publisher : Elsevier
Page : 262 pages
File Size : 54,9 Mb
Release : 2024-05-31
Category : Technology & Engineering
ISBN : 9780323999403

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GaN Transistor Modeling for RF and Power Electronics by Yogesh Singh Chauhan,Ahtisham Ul Haq Pampori,Sheikh Aamir Ahsan Pdf

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed

Nonlinear Design: FETs and HEMTs

Author : Peter H. Ladbrooke
Publisher : Artech House
Page : 480 pages
File Size : 52,6 Mb
Release : 2021-11-30
Category : Technology & Engineering
ISBN : 9781630818692

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Nonlinear Design: FETs and HEMTs by Peter H. Ladbrooke Pdf

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.

Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

Author : Ao Zhang,Jianjun Gao
Publisher : World Scientific
Page : 322 pages
File Size : 55,9 Mb
Release : 2023-03-21
Category : Technology & Engineering
ISBN : 9789811255373

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Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices by Ao Zhang,Jianjun Gao Pdf

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Author : Jianjun Gao
Publisher : IET
Page : 351 pages
File Size : 46,8 Mb
Release : 2010-06-30
Category : Technology & Engineering
ISBN : 9781891121890

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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors by Jianjun Gao Pdf

The purpose of this book is to introduce engineers and students to modern RF and microwave semiconductor device modelling and measurement techniques used in RF and microwave integrated circuit computer aided design (CAD).

Microwave and RF Vacuum Electronic Power Sources

Author : Richard G. Carter
Publisher : Cambridge University Press
Page : 843 pages
File Size : 43,9 Mb
Release : 2018-04-12
Category : Technology & Engineering
ISBN : 9780521198622

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Microwave and RF Vacuum Electronic Power Sources by Richard G. Carter Pdf

Get up-to-speed on the theory, principles and design of vacuum electron devices.

Nonlinear Circuit Simulation and Modeling

Author : José Carlos Pedro,David E. Root,Jianjun Xu,Luís Cótimos Nunes
Publisher : Cambridge University Press
Page : 361 pages
File Size : 54,8 Mb
Release : 2018-06-14
Category : Technology & Engineering
ISBN : 9781107140592

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Nonlinear Circuit Simulation and Modeling by José Carlos Pedro,David E. Root,Jianjun Xu,Luís Cótimos Nunes Pdf

A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.

Microwave De-embedding

Author : Giovanni Crupi,Dominique Schreurs
Publisher : Academic Press
Page : 481 pages
File Size : 48,7 Mb
Release : 2013-11-09
Category : Technology & Engineering
ISBN : 9780124045927

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Microwave De-embedding by Giovanni Crupi,Dominique Schreurs Pdf

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Microwave De-embedding

Author : Antonio Raffo,Valeria Vadalà,Giorgio Vannini
Publisher : Elsevier Inc. Chapters
Page : 480 pages
File Size : 51,8 Mb
Release : 2013-11-09
Category : Technology & Engineering
ISBN : 9780128068632

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Microwave De-embedding by Antonio Raffo,Valeria Vadalà,Giorgio Vannini Pdf

The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.

Fundamentals of RF and Microwave Transistor Amplifiers

Author : Inder Bahl
Publisher : John Wiley & Sons
Page : 696 pages
File Size : 54,5 Mb
Release : 2009-06-17
Category : Technology & Engineering
ISBN : 0470462310

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Fundamentals of RF and Microwave Transistor Amplifiers by Inder Bahl Pdf

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.