Neutron Transmutation Doping In Semiconductors

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Neutron Transmutation Doping in Semiconductors

J. Meese
Neutron Transmutation Doping in Semiconductors Book PDF

Author : J. Meese
Publisher : Springer Science & Business Media
Page : 368 pages
File Size : 49,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781468482492

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Neutron Transmutation Doping in Semiconductors by J. Meese Pdf

This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Neutron Transmutation Doping of Semiconductor Materials

Robert D. Larrabee
Neutron Transmutation Doping of Semiconductor Materials Book PDF

Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 53,6 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461326953

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Neutron Transmutation Doping of Semiconductor Materials by Robert D. Larrabee Pdf

viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Neutron-Transmutation-Doped Silicon

Jens Guldberg
Neutron Transmutation Doped Silicon Book PDF

Author : Jens Guldberg
Publisher : Springer Science & Business Media
Page : 493 pages
File Size : 53,6 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461332619

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Neutron-Transmutation-Doped Silicon by Jens Guldberg Pdf

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Neutron Transmutation Doping of Silicon at Research Reactors

International Atomic Energy Agency
Neutron Transmutation Doping of Silicon at Research Reactors Book PDF

Author : International Atomic Energy Agency
Publisher : Unknown
Page : 95 pages
File Size : 51,7 Mb
Release : 2012
Category : Science
ISBN : 9201300107

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Neutron Transmutation Doping of Silicon at Research Reactors by International Atomic Energy Agency Pdf

This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.

Neutron-Transmutation-Doped Silicon

Jens Guldberg
Neutron Transmutation Doped Silicon Book PDF

Author : Jens Guldberg
Publisher : Unknown
Page : 520 pages
File Size : 54,9 Mb
Release : 2014-01-15
Category : Electronic
ISBN : 1461332621

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Neutron-Transmutation-Doped Silicon by Jens Guldberg Pdf

Impurity Doping Processes in Silicon

F.F.Y. Wang
Impurity Doping Processes in Silicon Book PDF

Author : F.F.Y. Wang
Publisher : Elsevier
Page : 652 pages
File Size : 40,9 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780080983578

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Impurity Doping Processes in Silicon by F.F.Y. Wang Pdf

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

NBS Special Publication

Anonim
NBS Special Publication Book PDF

Author : Anonim
Publisher : Unknown
Page : 630 pages
File Size : 52,7 Mb
Release : 1979
Category : Weights and measures
ISBN : UCAL:B4108980

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NBS Special Publication by Anonim Pdf

Applications of the Isotopic Effect in Solids

Vladimir G. Plekhanov
Applications of the Isotopic Effect in Solids Book PDF

Author : Vladimir G. Plekhanov
Publisher : Springer Science & Business Media
Page : 334 pages
File Size : 52,8 Mb
Release : 2013-04-17
Category : Science
ISBN : 9783642185038

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Applications of the Isotopic Effect in Solids by Vladimir G. Plekhanov Pdf

Readers intent on mastering the basics should start by reading the first few overview chapters and then delve into the descriptions of specific current applications to see how they actually work. Important future applications are also outlined, including information storage, materials for computer memories, quantum computers, isotopic fibers, isotopic optoelectronics, and quantum electronics.

Dopants and Defects in Semiconductors

Matthew D. McCluskey,Eugene E. Haller
Dopants and Defects in Semiconductors Book PDF

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 392 pages
File Size : 52,7 Mb
Release : 2012-02-23
Category : Science
ISBN : 9781439831526

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Dopants and Defects in Semiconductors by Matthew D. McCluskey,Eugene E. Haller Pdf

Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.

Isotopes in Condensed Matter

Vladimir G. Plekhanov
Isotopes in Condensed Matter Book PDF

Author : Vladimir G. Plekhanov
Publisher : Springer Science & Business Media
Page : 299 pages
File Size : 40,9 Mb
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 9783642287237

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Isotopes in Condensed Matter by Vladimir G. Plekhanov Pdf

This book provides a concise introduction to the newly created sub-discipline of solid state physics isotopetronics. The role of isotopes in materials and their properties are describe in this book. The problem of the enigma of the atomic mass in microphysics is briefly discussed. The range of the applications of isotopes is wide: from biochemical process in living organisms to modern technical applications in quantum information. Isotopetronics promises to improve nanoelectronic and optoelectronic devices. With numerous illustrations this book is useful to researchers, engineers and graduate students.