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Author : D. Alexiev
Publisher : Unknown
Page : 11 pages
File Size : 42,8 Mb
Release : 1987
Category : Gallium arsenide semiconductors
ISBN : 0642598770
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 45,5 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461326953
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : J. Meese
Publisher : Springer Science & Business Media
Page : 368 pages
File Size : 55,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781468482492
This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Author : C. Claeys,E. Simoen
Publisher : Springer Science & Business Media
Page : 424 pages
File Size : 52,5 Mb
Release : 2013-11-11
Category : Science
ISBN : 9783662049747
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author : Jens Guldberg
Publisher : Springer Science & Business Media
Page : 493 pages
File Size : 43,9 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461332619
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Author : Pier Giovanni Pelfer,Jens Ludwig,K Runge,H S Rupprecht
Publisher : World Scientific
Page : 258 pages
File Size : 55,9 Mb
Release : 1996-02-09
Category : Electronic
ISBN : 9789814548748
The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Author : Anonim
Publisher : Unknown
Page : 444 pages
File Size : 53,8 Mb
Release : 1994
Category : Power resources
ISBN : PSU:000052606298
Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 673 pages
File Size : 42,7 Mb
Release : 1984
Category : Technology & Engineering
ISBN : 0803104030
Author : Vladimir G. Plekhanov
Publisher : Springer Science & Business Media
Page : 299 pages
File Size : 49,6 Mb
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 9783642287237
This book provides a concise introduction to the newly created sub-discipline of solid state physics isotopetronics. The role of isotopes in materials and their properties are describe in this book. The problem of the enigma of the atomic mass in microphysics is briefly discussed. The range of the applications of isotopes is wide: from biochemical process in living organisms to modern technical applications in quantum information. Isotopetronics promises to improve nanoelectronic and optoelectronic devices. With numerous illustrations this book is useful to researchers, engineers and graduate students.
Author : Vladimir G. Plekhanov
Publisher : Springer Science & Business Media
Page : 334 pages
File Size : 51,8 Mb
Release : 2013-04-17
Category : Science
ISBN : 9783642185038
Readers intent on mastering the basics should start by reading the first few overview chapters and then delve into the descriptions of specific current applications to see how they actually work. Important future applications are also outlined, including information storage, materials for computer memories, quantum computers, isotopic fibers, isotopic optoelectronics, and quantum electronics.
Author : Anonim
Publisher : Unknown
Page : 690 pages
File Size : 47,6 Mb
Release : 1982
Category : Gallium arsenide
ISBN : PSU:000008587459
Author : F.F.Y. Wang
Publisher : Elsevier
Page : 652 pages
File Size : 51,8 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780080983578
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Author : G. E. Stillman
Publisher : CRC Press
Page : 684 pages
File Size : 50,6 Mb
Release : 1983-04
Category : Gallium arsenide
ISBN : UCAL:B4537445
Author : Anonim
Publisher : INSPEC
Page : 370 pages
File Size : 42,7 Mb
Release : 1986
Category : Gallium
ISBN : UOM:39015011144253
Author : C.R. Kitchin
Publisher : CRC Press
Page : 466 pages
File Size : 43,7 Mb
Release : 2020-07-27
Category : Science
ISBN : 9780429956997
Long used in undergraduate and introductory graduate courses, Astrophysical Techniques, Seventh Edition provides an accessible yet comprehensive account of the innovate instruments, detectors, and techniques employed in astronomy and astrophysics. Emphasizing the underlying unity of all astronomical observations, this popular textbook provides a coherent state-of-the-art account of the instruments and techniques used in current astronomy and astrophysics. Fully updated throughout, this seventh edition builds upon the sixth edition, covering improved techniques and cutting-edge methods in the field, as well as other exciting new developments in gravitational waves, dark matter and energy, the use of photonics, and astronomy education and outreach, in addition to further detailed discussions on the latest scientific instruments and individual detectors. The book is written in a very accessible manner, and most of the mathematics is accessible to those who have attended a mathematics course in their final years at school. Nevertheless, the treatment of the topics in general is at a sufficiently high level to be of use to those professionals seeking technical information in areas of astronomy with which they might not be completely familiar. Key Features: Details the instrumentation and theory of astronomical observations, including radio waves, gamma rays, cosmic rays, neutrinos, gravitational waves and dark matter and energy and more Presents the background theory and operating practice of state-of-the-art detectors and instruments Fully updated to contain the latest technology and research developments