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Author : S. Shingubara,H. Shima,Z. Karim,B. Magyari-Kope,T. Ohyanagi,Y. Suzuki,K. Rhie,K. Kobayashi,L. Goux,G. Bersuker
Publisher : The Electrochemical Society
Page : 156 pages
File Size : 49,6 Mb
Release : 2014
Category : Electronic
ISBN : 9781607685517
Author : Seungbum Hong,Orlando Auciello,Dirk Wouters
Publisher : Springer
Page : 280 pages
File Size : 42,5 Mb
Release : 2014-11-18
Category : Technology & Engineering
ISBN : 9781489975379
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author : Tseung-Yuen Tseng,S. M. Sze
Publisher : Unknown
Page : 128 pages
File Size : 50,7 Mb
Release : 2012
Category : Flash memories (Computers)
ISBN : 1588832503
Author : Giovanni Campardo,Rino Micheloni,David Novosel
Publisher : Springer Science & Business Media
Page : 616 pages
File Size : 41,6 Mb
Release : 2005-01-18
Category : Computers
ISBN : 354020198X
VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Author : Pierre-Camille Lacaze,Jean-Claude Lacroix
Publisher : John Wiley & Sons
Page : 128 pages
File Size : 50,6 Mb
Release : 2014-12-02
Category : Technology & Engineering
ISBN : 9781118790120
Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.
Author : Hai Li,Yiran Chen
Publisher : CRC Press
Page : 207 pages
File Size : 52,6 Mb
Release : 2011-12-19
Category : Computers
ISBN : 9781439807453
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Author : Yoshio Nishi
Publisher : Elsevier
Page : 456 pages
File Size : 53,7 Mb
Release : 2014-06-24
Category : Computers
ISBN : 9780857098092
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author : Hao Yu,Leibin Ni,Yuhao Wang
Publisher : Morgan & Claypool Publishers
Page : 163 pages
File Size : 45,5 Mb
Release : 2016-12-02
Category : Computers
ISBN : 9781627056441
Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.
Author : Panagiotis Dimitrakis
Publisher : Springer
Page : 211 pages
File Size : 53,8 Mb
Release : 2017-02-14
Category : Technology & Engineering
ISBN : 9783319487052
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Author : Hai Li,Yiran Chen
Publisher : CRC Press
Page : 207 pages
File Size : 50,5 Mb
Release : 2017-12-19
Category : Computers
ISBN : 9781351834193
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Author : Hao Yu,Yuhao Wang
Publisher : Springer Science & Business
Page : 200 pages
File Size : 40,8 Mb
Release : 2014-04-18
Category : Technology & Engineering
ISBN : 9781493905515
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; • Provides both theoretical analysis and practical examples to illustrate design methodologies; • Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.
Author : Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Publisher : Elsevier
Page : 534 pages
File Size : 50,7 Mb
Release : 2022-03-01
Category : Technology & Engineering
ISBN : 9780128146309
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author : Munmaya Mishra
Publisher : CRC Press
Page : 6778 pages
File Size : 52,6 Mb
Release : 2018-12-17
Category : Science
ISBN : 9781351019408
Undoubtedly the applications of polymers are rapidly evolving. Technology is continually changing and quickly advancing as polymers are needed to solve a variety of day-to-day challenges leading to improvements in quality of life. The Encyclopedia of Polymer Applications presents state-of-the-art research and development on the applications of polymers. This groundbreaking work provides important overviews to help stimulate further advancements in all areas of polymers. This comprehensive multi-volume reference includes articles contributed from a diverse and global team of renowned researchers. It offers a broad-based perspective on a multitude of topics in a variety of applications, as well as detailed research information, figures, tables, illustrations, and references. The encyclopedia provides introductions, classifications, properties, selection, types, technologies, shelf-life, recycling, testing and applications for each of the entries where applicable. It features critical content for both novices and experts including, engineers, scientists (polymer scientists, materials scientists, biomedical engineers, macromolecular chemists), researchers, and students, as well as interested readers in academia, industry, and research institutions.
Author : Joe Brewer,Manzur Gill
Publisher : John Wiley & Sons
Page : 766 pages
File Size : 52,8 Mb
Release : 2011-09-23
Category : Technology & Engineering
ISBN : 9781118211625
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Author : Nobuyoshi Koshida
Publisher : Springer Science & Business Media
Page : 350 pages
File Size : 48,6 Mb
Release : 2008-12-11
Category : Technology & Engineering
ISBN : 9780387786896
Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.