Resonant Tunneling In Semiconductors

Author : L.L. Chang,E.E. Mendez,C. Tejedor
Publisher : Springer Science & Business Media
Page : 526 pages
File Size : 44,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461538462

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Resonant Tunneling in Semiconductors by L.L. Chang,E.E. Mendez,C. Tejedor Pdf

This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.

Author : L. L. Chang,E. E. Mendez,C. Tejedor
Publisher : Unknown
Page : 558 pages
File Size : 51,5 Mb
Release : 1992-02-01
Category : Electronic
ISBN : 1461538475

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Resonant Tunneling in Semiconductors by L. L. Chang,E. E. Mendez,C. Tejedor Pdf

Author : Hiroshi Mizuta,Tomonori Tanoue
Publisher : Cambridge University Press
Page : 256 pages
File Size : 43,7 Mb
Release : 1995-09-14
Category : Technology & Engineering
ISBN : 0521432189

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The Physics and Applications of Resonant Tunnelling Diodes by Hiroshi Mizuta,Tomonori Tanoue Pdf

This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.

Author : C. N. IRONSIDE
Publisher : Unknown
Page : 128 pages
File Size : 48,8 Mb
Release : 2019
Category : Electronic
ISBN : 0750330228

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RESONANT TUNNELING DIODE PHOTONICS by C. N. IRONSIDE Pdf

Author : David K. Ferry
Publisher : CRC Press
Page : 230 pages
File Size : 43,7 Mb
Release : 2017-12-14
Category : Science
ISBN : 9781351796378

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An Introduction to Quantum Transport in Semiconductors by David K. Ferry Pdf

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses. The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.

Author : Charlie Ironside,Bruno Romeira,Jose Figueiredo
Publisher : Unknown
Page : 0 pages
File Size : 44,5 Mb
Release : 2023-12
Category : Science
ISBN : 0750357126

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Resonant Tunneling Diode Photonics Devices and Applications (Second Edition) by Charlie Ironside,Bruno Romeira,Jose Figueiredo Pdf

The book uses a combination of quantum theory, semiconductor physics, and nonlinear dynamics to explain how resonant tunneling diode-based photonic devices can contribute to the development of photonic and neuromorphic systems and implement hardware specifically designed for neural networks which are at the heart of artificial intelligence.

Author : Raphael Tsu
Publisher : Elsevier
Page : 346 pages
File Size : 52,7 Mb
Release : 2010-10-22
Category : Science
ISBN : 9780080968131

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Superlattice to Nanoelectronics by Raphael Tsu Pdf

Written by one of the founders in this field, this edition provides a historical overview of the invention of superlattice, one of the most important devices of the second half of the 20th century. In addition to describing the fundamental concepts, this completely revised and updated edition provides new insights in the field of man-made solids.

Author : H T Grahn
Publisher : World Scientific
Page : 268 pages
File Size : 54,9 Mb
Release : 1995-04-17
Category : Science
ISBN : 9789814501255

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Semiconductor Superlattices by H T Grahn Pdf

This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier–Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths. Contents: Growth and Characterization (K Fujiwara)Miniband Transport (A Sibille)Wannier–Stark Localization and Bloch Oscillations (F Agulló-Rueda & J Feldmann)Resonant Tunneling (H Grahn)Electric Field Domains (H Grahn). Readership: Physicists and materials scientists. keywords:Semiconductor Superlattices;Nanostructures;Fabrication;Miniband Transport;Bloch Oscillations;Wannier–Stark Localization;Resonant Tunneling;Electric-Field Domains;Non-Linear Transport;Optical Properties

Author : Ironside Charlie
Publisher : Unknown
Page : 0 pages
File Size : 55,8 Mb
Release : 2019
Category : Electronic
ISBN : 164327743X

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Resonant Tunneling Diode Photonics by Ironside Charlie Pdf

Author : Giorgio Margaritondo
Publisher : Springer Science & Business Media
Page : 348 pages
File Size : 46,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9789400930735

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Electronic Structure of Semiconductor Heterojunctions by Giorgio Margaritondo Pdf

E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Author : Simon M. Sze,Kwok K. Ng
Publisher : John Wiley & Sons
Page : 828 pages
File Size : 42,6 Mb
Release : 2006-12-13
Category : Technology & Engineering
ISBN : 9780470068304

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Physics of Semiconductor Devices by Simon M. Sze,Kwok K. Ng Pdf

The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.

Author : Simon M. Sze,Yiming Li,Kwok K. Ng
Publisher : John Wiley & Sons
Page : 944 pages
File Size : 51,7 Mb
Release : 2021-03-24
Category : Technology & Engineering
ISBN : 9781119429135

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Physics of Semiconductor Devices by Simon M. Sze,Yiming Li,Kwok K. Ng Pdf

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Author : Holger T. Grahn
Publisher : World Scientific
Page : 270 pages
File Size : 44,6 Mb
Release : 1995
Category : Technology & Engineering
ISBN : 9810220618

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Semiconductor Superlattices by Holger T. Grahn Pdf

This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.

Author : E M Anastassakis,John D Joannopoulos
Publisher : World Scientific
Page : 2768 pages
File Size : 48,8 Mb
Release : 1990-11-29
Category : Electronic
ISBN : 9789814583633

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Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes) by E M Anastassakis,John D Joannopoulos Pdf

Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

Author : Supriyo Datta
Publisher : Cambridge University Press
Page : 398 pages
File Size : 53,5 Mb
Release : 1997-05-15
Category : Science
ISBN : 9781139643016

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Electronic Transport in Mesoscopic Systems by Supriyo Datta Pdf

Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.