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Superlattice to Nanoelectronics by Raphael Tsu Pdf
Written by one of the founders in this field, this edition provides a historical overview of the invention of superlattice, one of the most important devices of the second half of the 20th century. In addition to describing the fundamental concepts, this completely revised and updated edition provides new insights in the field of man-made solids.
Superlattice to Nanoelectronics by Raphael Tsu Pdf
Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement via geometry and multipole electrodes. Issues of robustness, redundancy and I/O. Researchers, course students and research establishments should read this book, written by the leading expert in nanoelectronics and superlattices. * The Author is one of the founders of the field of superlattices * The FIRST historical overview of the field * Provides a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials
Granular Nanoelectronics by David K. Ferry,John R. Barker,Carlo Jacoboni Pdf
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Nanocomposites, Nanophotonics, Nanobiotechnology, and Applications by Olena Fesenko,Leonid Yatsenko Pdf
This book presents some of the latest achievements in nanotechnology and nanomaterials from leading researchers in Ukraine, Europe, and beyond. It features contributions from participants in the 2nd International Summer School “Nanotechnology: From Fundamental Research to Innovations” and International Research and Practice Conference “Nanotechnology and Nanomaterials”, NANO-2013, which were held in Bukovel, Ukraine on August 25-September 1, 2013. These events took place within the framework of the European Commission FP7 project Nanotwinning, and were organized jointly by the Institute of Physics of the National Academy of Sciences of Ukraine, University of Tartu (Estonia), University of Turin (Italy), and Pierre and Marie Curie University (France). Internationally recognized experts from a wide range of universities and research institutions share their knowledge and key results on topics ranging from nanooptics, nanoplasmonics, and interface studies to energy storage and biomedical applications.
Handbook of Terahertz Technology by Neil Sellers Pdf
Terahertz radiation - also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz - consists of electromagnetic waves within the ITU-designated band of frequencies from 0.3 to 3 terahertz. Wavelengths of radiation in the terahertz band correspondingly range from 1 mm to 0.1 mm. Because terahertz radiation begins at a wavelength of one millimeter and proceeds into shorter wavelengths, it is sometimes known as the submillimeter band, and its radiation as submillimeter waves, especially in astronomy. The book presents information about Terahertz science, Terahertz photodetectors and Terahertz Lasers. A special emphasis is given to room temperature operation of long wavelength photodetectors based on novel quantum dots. Moreover, a complete analysis of systems based on Quantum Cascade structures to detect far infrared wavelengths is provided. Finally, the book presents Terahertz laser principles considering multi-color lasers in this range of wavelengths. It is written as a background for graduate students in the Optics field.
Granular Nanoelectronics by David Ferry,John R. Barker,Carlo Jacoboni Pdf
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Nanoelectronics by Mircea Dragoman,Daniela Dragoman Pdf
This revised edition provides a current, unified treatment of the research, technology, and applications fueling the rapid growth of nanoelectronics. It features numerous updates, including expanded discussions on nanomaterials, micro and nano cantilevers, and spintronics.
Mechanical and thermal properties are reviewed and electrical and magnetic properties are emphasized. Basics of symmetry and internal structure of crystals and the main properties of metals, dielectrics, semiconductors, and magnetic materials are discussed. The theory and modern experimental data are presented, as well as the specifications of materials that are necessary for practical application in electronics. The modern state of research in nanophysics of metals, magnetic materials, dielectrics and semiconductors is taken into account, with particular attention to the influence of structure on the physical properties of nano-materials. The book uses simplified mathematical treatment of theories, while emphasis is placed on the basic concepts of physical phenomena in electronic materials. Most chapters are devoted to the advanced scientific and technological problems of electronic materials; in addition, some new insights into theoretical facts relevant to technical devices are presented. Electronic Materials is an essential reference for newcomers to the field of electronics, providing a fundamental understanding of important basic and advanced concepts in electronic materials science. Provides important overview of the fundamentals of electronic materials properties significant for device applications along with advanced and applied concepts essential to those working in the field of electronics Takes a simplified and mathematical approach to theories essential to the understanding of electronic materials and summarizes important takeaways at the end of each chapter Interweaves modern experimental data and research in topics such as nanophysics, nanomaterials and dielectrics
Nanoelectronics and Information Technology by Rainer Waser Pdf
Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
This book is aimed at senior undergraduates, graduate students and researchers interested in quantitative understanding and modeling of nanomaterial and device physics. With the rapid slow-down of semiconductor scaling that drove information technology for decades, there is a pressing need to understand and model electron flow at its fundamental molecular limits. The purpose of this book is to enable such a deconstruction needed to design the next generation memory, logic, sensor and communication elements. Through numerous case studies and topical examples relating to emerging technology, this book connects 'top down' classical device physics taught in electrical engineering classes with 'bottom up' quantum and many-body transport physics taught in physics and chemistry. The book assumes no more than a nodding acquaintance with quantum mechanics, in addition to knowledge of freshman level mathematics. Segments of this book are useful as a textbook for a course in nano-electronics.
Semiconductor Superlattices by Holger T. Grahn Pdf
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
