Shallow Impurity Centers In Semiconductors

Author : A. Baldereschi,R. Resta
Publisher : Elsevier
Page : 315 pages
File Size : 40,5 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780080984599

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Shallow Impurity Centers in Semiconductors by A. Baldereschi,R. Resta Pdf

Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

Author : A. Baldereschi,R. Resta
Publisher : North Holland
Page : 305 pages
File Size : 50,5 Mb
Release : 1987
Category : Impurity centers
ISBN : 0444870873

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Shallow Impurity Centers in Semiconductors by A. Baldereschi,R. Resta Pdf

Author : C A J Ammerlaan,B Pajot
Publisher : World Scientific
Page : 554 pages
File Size : 45,5 Mb
Release : 1997-04-19
Category : Electronic
ISBN : 9789814546676

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Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference by C A J Ammerlaan,B Pajot Pdf

This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.

Author : Peter YU,Manuel Cardona
Publisher : Springer Science & Business Media
Page : 778 pages
File Size : 48,6 Mb
Release : 2010-04-07
Category : Technology & Engineering
ISBN : 9783642007101

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Fundamentals of Semiconductors by Peter YU,Manuel Cardona Pdf

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Author : Arthur George Milnes
Publisher : Wiley-Interscience
Page : 552 pages
File Size : 48,9 Mb
Release : 1973
Category : Science
ISBN : UOM:39015028297268

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Deep Impurities in Semiconductors by Arthur George Milnes Pdf

Author : Sokrates T. Pantelides
Publisher : CRC Press
Page : 952 pages
File Size : 44,8 Mb
Release : 1992-11-30
Category : Science
ISBN : 2881245625

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Deep Centers in Semiconductors by Sokrates T. Pantelides Pdf

Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR

Author : Tsunemasa Taguchi
Publisher : Trans Tech Publications Ltd
Page : 540 pages
File Size : 51,5 Mb
Release : 1993-01-01
Category : Technology & Engineering
ISBN : 9783035704723

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Shallow Impurities in Semiconductors V by Tsunemasa Taguchi Pdf

The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Author : Mikhail Levinshtein,Michael Shur
Publisher : Springer Science & Business Media
Page : 392 pages
File Size : 41,8 Mb
Release : 1991-02
Category : Science
ISBN : 0883187833

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Best of Soviet Semiconductor Physics and Technology by Mikhail Levinshtein,Michael Shur Pdf

Culled from the thousands of papers published in American Institute of

Author : E. Fred Schubert
Publisher : E. Fred Schubert
Page : 128 pages
File Size : 40,6 Mb
Release : 2015-08-18
Category : Science
ISBN : 9780986382635

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Doping in III-V Semiconductors by E. Fred Schubert Pdf

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Author : D.J. Lockwood,Aron Pinczuk
Publisher : Springer Science & Business Media
Page : 443 pages
File Size : 40,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9789401119122

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Optical Phenomena in Semiconductor Structures of Reduced Dimensions by D.J. Lockwood,Aron Pinczuk Pdf

Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviors of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods. These studies have uncovered unexpected quantum mechanical correlations that arise because of the combined effects of strong electron-electron interactions and wave function confinement associated with reduced dimensionality. The investigations of these phenomena are currently at the frontiers of condensed-matter physics. They include areas like the fractional quantum Hall effect, the dynamics of electrons on an ultra short (femtosecond) time scale, electron behavior in quantum wires and dots, and studies of electron tunneling phenomena in ultra small semiconductor structures. Optical techniques have made important contributions to these fields in recent years, but there has been no coherent review of this work until now. The book provides an overview of these recent developments that will be of interest to semiconductor materials scientists in university, government and industrial laboratories.

Author : Tsunemasa Taguchi
Publisher : Unknown
Page : 566 pages
File Size : 50,7 Mb
Release : 1993
Category : Science
ISBN : UCSD:31822017740242

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Shallow Impurities in Semiconductors by Tsunemasa Taguchi Pdf

The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Author : Gordon Davies
Publisher : Trans Tech Publications Ltd
Page : 502 pages
File Size : 47,7 Mb
Release : 1991-01-01
Category : Technology & Engineering
ISBN : 9783035704570

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Shallow Impurities in Semiconductors IV by Gordon Davies Pdf

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Author : W. Hayes,A. M. Stoneham
Publisher : Courier Corporation
Page : 480 pages
File Size : 54,8 Mb
Release : 2012-02-10
Category : Science
ISBN : 9780486160887

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Defects and Defect Processes in Nonmetallic Solids by W. Hayes,A. M. Stoneham Pdf

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Author : B.I. Shklovskii,A.L. Efros
Publisher : Springer Science & Business Media
Page : 400 pages
File Size : 44,6 Mb
Release : 2013-11-09
Category : Science
ISBN : 9783662024034

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Electronic Properties of Doped Semiconductors by B.I. Shklovskii,A.L. Efros Pdf

First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Author : Viktor S. Vavilov
Publisher : Springer
Page : 235 pages
File Size : 53,8 Mb
Release : 2013-12-14
Category : Science
ISBN : 9781489927200

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Effects of Radiation on Semiconductors by Viktor S. Vavilov Pdf

The effects of electromagnetic radiation and high-energy par ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza tion, i. e. , the generation of excess charge carriers); and(b) dis turbance of the periodic structure of the crystal, i. e. , the forma tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi conductors. The same is true of photoelectric and similar phe nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.