Silicon Germanium Carbon Alloys

Author : S. Pantellides
Publisher : CRC Press
Page : 552 pages
File Size : 41,6 Mb
Release : 2002-07-26
Category : Technology & Engineering
ISBN : 1560329637

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Silicon-Germanium Carbon Alloys by S. Pantellides Pdf

Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

Author : Gudrun Kissinger,Sergio Pizzini
Publisher : CRC Press
Page : 424 pages
File Size : 40,8 Mb
Release : 2014-12-09
Category : Science
ISBN : 9781466586659

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Silicon, Germanium, and Their Alloys by Gudrun Kissinger,Sergio Pizzini Pdf

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Author : Erich Kasper,Klara Lyutovich
Publisher : Unknown
Page : 128 pages
File Size : 44,7 Mb
Release : 2006
Category : Germanium
ISBN : OCLC:798085830

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Properties of Silicon Germanium and SiGe by Erich Kasper,Klara Lyutovich Pdf

Author : James R. Dekker
Publisher : Unknown
Page : 406 pages
File Size : 44,6 Mb
Release : 1998
Category : Electronic
ISBN : UCAL:X58312

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Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas by James R. Dekker Pdf

Author : Erich Kasper,Klara Lyutovich
Publisher : Inst of Engineering & Technology
Page : 372 pages
File Size : 43,7 Mb
Release : 1999-12
Category : Technology & Engineering
ISBN : 0863415571

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Properties of Silicon Germanium and SiGe by Erich Kasper,Klara Lyutovich Pdf

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Author : Pio Capezzuto,Arun Madan
Publisher : Elsevier
Page : 339 pages
File Size : 41,9 Mb
Release : 1995-10-10
Category : Science
ISBN : 9780080539102

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Plasma Deposition of Amorphous Silicon-Based Materials by Pio Capezzuto,Arun Madan Pdf

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

Author : H.J. Osten
Publisher : Trans Tech Publications Ltd
Page : 88 pages
File Size : 51,6 Mb
Release : 1999-07-07
Category : Technology & Engineering
ISBN : 9783035705911

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Carbon-Containing Layers on Silicon by H.J. Osten Pdf

The addition of supersaturated carbon to silicon or silicon-germanium thin films leads to a new class of semiconducting materials. This new material can alleviate some of the constraints on strained Si1-xGex and may help to open up new fields of device applications for heteroepitaxial Si-based systems. Basic growth problems, as well as the mechanical and electrical properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically onto Si(001), have been reviewed. The incorporation of carbon can be used (i) to enhance SiGe layer properties, (ii) to obtain layers with new properties, or (iii) to control dopant diffusion in microelectronic devices. The phenomenon of suppressed boron diffusion in carbon-rich epitaxial layers can be used to increase the performance of SiGe heterojunction bipolar transistors (HBTs). When compared with SiGe technologies, the addition of carbon offers a significantly greater flexibility in process design and a greater latitude in processing margins.

Author : M. Willander,Suresh C. Jain
Publisher : Elsevier
Page : 325 pages
File Size : 51,5 Mb
Release : 2003-10-02
Category : Technology & Engineering
ISBN : 9780080541020

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Silicon-Germanium Strained Layers and Heterostructures by M. Willander,Suresh C. Jain Pdf

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers

Author : Hari Singh Nalwa
Publisher : Elsevier
Page : 3451 pages
File Size : 52,6 Mb
Release : 2001-11-17
Category : Technology & Engineering
ISBN : 9780080533247

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Handbook of Thin Films, Five-Volume Set by Hari Singh Nalwa Pdf

This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

Author : Yasuhiro Shiraki,Noritaka Usami
Publisher : Unknown
Page : 627 pages
File Size : 55,5 Mb
Release : 2011
Category : Electronic
ISBN : 1613443722

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Silicon-germanium (SiGe) Nanostructures by Yasuhiro Shiraki,Noritaka Usami Pdf

Author : John D. Cressler
Publisher : CRC Press
Page : 472 pages
File Size : 51,8 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066913

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Silicon Heterostructure Devices by John D. Cressler Pdf

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Author : John D. Cressler
Publisher : CRC Press
Page : 200 pages
File Size : 41,6 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066937

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Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler Pdf

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Author : John D. Cressler
Publisher : CRC Press
Page : 360 pages
File Size : 55,8 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066951

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Circuits and Applications Using Silicon Heterostructure Devices by John D. Cressler Pdf

No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Author : Arvind Shah
Publisher : EPFL Press
Page : 472 pages
File Size : 44,8 Mb
Release : 2010-08-19
Category : Technology & Engineering
ISBN : 1420066749

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Thin-Film Silicon Solar Cells by Arvind Shah Pdf

Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, starting out with the physical properties, but concentrating on device applications. A special emphasis is given to amorphous silicon and microcrystalline silicon as photovoltaic materials, along with a model that allows these systems to be physically described in the simplest manner possible, thus allowing the student or scientist/engineer entering the field of thin-film electronics to master a few basic concepts that are distinct from those in the field of conventional semiconductors. The main part of the book deals with solar cells and modules by illustrating the basic functioning of these devices, along with their limitations, design optimization, testing and fabrication methods. Among the manufacturing processes discussed are plasma-assisted and hot-wire deposition, sputtering, and structuring techniques.

Author : C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers
Publisher : IET
Page : 520 pages
File Size : 41,5 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 0852967780

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Strained Silicon Heterostructures by C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers Pdf

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.