Silicon Germanium Strained Layers And Heterostructures

Author : M. Willander,Suresh C. Jain
Publisher : Elsevier
Page : 322 pages
File Size : 40,5 Mb
Release : 2003-10-02
Category : Technology & Engineering
ISBN : 9780080541020

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Silicon-Germanium Strained Layers and Heterostructures by M. Willander,Suresh C. Jain Pdf

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

Author : Suresh C. Jain
Publisher : Unknown
Page : 328 pages
File Size : 54,5 Mb
Release : 1994
Category : Germanium
ISBN : UIUC:30112077979877

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Germanium-silicon Strained Layers and Heterostructures by Suresh C. Jain Pdf

Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.

Author : M. Willander,Suresh C. Jain
Publisher : Academic Press
Page : 322 pages
File Size : 51,5 Mb
Release : 2003-10-20
Category : Technology & Engineering
ISBN : 0127521836

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Silicon-Germanium Strained Layers and Heterostructures by M. Willander,Suresh C. Jain Pdf

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

Author : C.K Maiti,G.A Armstrong
Publisher : CRC Press
Page : 402 pages
File Size : 52,5 Mb
Release : 2001-07-20
Category : Science
ISBN : 9781420034691

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Applications of Silicon-Germanium Heterostructure Devices by C.K Maiti,G.A Armstrong Pdf

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Author : John D. Cressler
Publisher : CRC Press
Page : 425 pages
File Size : 47,5 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781351834797

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler Pdf

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Author : John D. Cressler
Publisher : Unknown
Page : 264 pages
File Size : 49,8 Mb
Release : 2008
Category : Bipolar transistors
ISBN : 1315218909

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SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler Pdf

Author : C.K Maiti,S Chattopadhyay,L.K Bera
Publisher : CRC Press
Page : 438 pages
File Size : 51,7 Mb
Release : 2007-01-11
Category : Science
ISBN : 9781420012347

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Strained-Si Heterostructure Field Effect Devices by C.K Maiti,S Chattopadhyay,L.K Bera Pdf

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Author : C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers
Publisher : IET
Page : 520 pages
File Size : 49,8 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 0852967780

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Strained Silicon Heterostructures by C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers Pdf

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 53,7 Mb
Release : 2005
Category : Bipolar transistors
ISBN : 1315221136

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Silicon Heterostructure Handbook by Anonim Pdf

Appropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. The 75 contributions are divided into eight sections on epitaxial growth techniques, SiGe heterojunction bipolar tr.

Author : John D. Cressler
Publisher : CRC Press
Page : 1248 pages
File Size : 40,9 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420026580

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Silicon Heterostructure Handbook by John D. Cressler Pdf

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Author : Y. Nissim,Emmanuel Rosencher
Publisher : Springer Science & Business Media
Page : 361 pages
File Size : 41,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9789400909137

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Heterostructures on Silicon: One Step Further with Silicon by Y. Nissim,Emmanuel Rosencher Pdf

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Author : John D. Cressler,Guofu Niu
Publisher : Artech House
Page : 570 pages
File Size : 53,6 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 9781580533614

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Silicon-germanium Heterojunction Bipolar Transistors by John D. Cressler,Guofu Niu Pdf

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Author : A. M. Stoneham,Suresh C. Jain
Publisher : Unknown
Page : 368 pages
File Size : 40,8 Mb
Release : 1995
Category : Germanium
ISBN : OCLC:655679841

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GeSi Strained Layers and Their Applications by A. M. Stoneham,Suresh C. Jain Pdf

Author : Erich Kasper,INSPEC (Information service)
Publisher : Institution of Electrical Engineers
Page : 0 pages
File Size : 55,9 Mb
Release : 1995
Category : Germanium alloys
ISBN : 0852968264

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Properties of Strained and Relaxed Silicon Germanium by Erich Kasper,INSPEC (Information service) Pdf

This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.

Author : Y. Shiraki,T.P. Pearsall,Erwin Kasper
Publisher : Elsevier
Page : 289 pages
File Size : 42,6 Mb
Release : 1993-02-18
Category : Science
ISBN : 9780444596895

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SiGe Based Technologies by Y. Shiraki,T.P. Pearsall,Erwin Kasper Pdf

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.