Silicon Heterostructure Handbook

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Silicon Heterostructure Handbook

John D. Cressler
Silicon Heterostructure Handbook Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 1248 pages
File Size : 51,9 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420026580

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Silicon Heterostructure Handbook by John D. Cressler Pdf

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Silicon Heterostructure Devices

John D. Cressler
Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 472 pages
File Size : 50,9 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066913

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Silicon Heterostructure Devices by John D. Cressler Pdf

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Measurement and Modeling of Silicon Heterostructure Devices

John D. Cressler
Measurement and Modeling of Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 200 pages
File Size : 45,8 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066937

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Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler Pdf

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Circuits and Applications Using Silicon Heterostructure Devices

John D. Cressler
Circuits and Applications Using Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 417 pages
File Size : 49,8 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781351834759

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Circuits and Applications Using Silicon Heterostructure Devices by John D. Cressler Pdf

No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

John D. Cressler
SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 264 pages
File Size : 50,6 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781420066869

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler Pdf

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Measurement and Modeling of Silicon Heterostructure Devices

John D. Cressler
Measurement and Modeling of Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 195 pages
File Size : 43,8 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781351834766

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Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler Pdf

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

John D. Cressler
SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 425 pages
File Size : 42,9 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781351834797

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler Pdf

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Silicon-germanium Heterojunction Bipolar Transistors

John D. Cressler,Guofu Niu
Silicon germanium Heterojunction Bipolar Transistors Book PDF

Author : John D. Cressler,Guofu Niu
Publisher : Artech House
Page : 592 pages
File Size : 47,9 Mb
Release : 2003
Category : Science
ISBN : 1580535992

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Silicon-germanium Heterojunction Bipolar Transistors by John D. Cressler,Guofu Niu Pdf

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Strained Silicon Heterostructures

C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers
Strained Silicon Heterostructures Book PDF

Author : C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers
Publisher : IET
Page : 520 pages
File Size : 42,7 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 0852967780

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Strained Silicon Heterostructures by C. K. Maiti,N. B. Chakrabarti,S. K. Ray,Institution of Electrical Engineers Pdf

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

The VLSI Handbook

Wai-Kai Chen
The VLSI Handbook Book PDF

Author : Wai-Kai Chen
Publisher : CRC Press
Page : 2320 pages
File Size : 47,5 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420005967

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The VLSI Handbook by Wai-Kai Chen Pdf

For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Silicon Heterostructure Devices

John D. Cressler
Silicon Heterostructure Devices Book PDF

Author : John D. Cressler
Publisher : Unknown
Page : 128 pages
File Size : 40,8 Mb
Release : 2008
Category : Bipolar integrated circuits
ISBN : 1351826085

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Silicon Heterostructure Devices by John D. Cressler Pdf

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from t.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Wilfried G. J. H. M. van Sark,Lars Korte,Francesco Roca
Physics and Technology of Amorphous Crystalline Heterostructure Silicon Solar Cells Book PDF

Author : Wilfried G. J. H. M. van Sark,Lars Korte,Francesco Roca
Publisher : Springer Science & Business Media
Page : 582 pages
File Size : 40,5 Mb
Release : 2011-11-16
Category : Technology & Engineering
ISBN : 9783642222757

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Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells by Wilfried G. J. H. M. van Sark,Lars Korte,Francesco Roca Pdf

Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications

Niccolò Rinaldi,Michael Schröter
Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications Book PDF

Author : Niccolò Rinaldi,Michael Schröter
Publisher : River Publishers
Page : 378 pages
File Size : 45,6 Mb
Release : 2018-03-15
Category : Technology & Engineering
ISBN : 9788793519619

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Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by Niccolò Rinaldi,Michael Schröter Pdf

The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Silicon-Based Photonics

Erich Kasper,Jinzhong Yu
Silicon Based Photonics Book PDF

Author : Erich Kasper,Jinzhong Yu
Publisher : CRC Press
Page : 352 pages
File Size : 40,7 Mb
Release : 2020-07-24
Category : Technology & Engineering
ISBN : 9789814303255

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Silicon-Based Photonics by Erich Kasper,Jinzhong Yu Pdf

Silicon photonics has evolved rapidly as a research topic with enormous application potential. The high refractive index contrast of silicon-on-insulator (SOI) shows great promise for submicron waveguide structures suited for integration on the chip scale in the near-infrared region. Ge- and GeSn-Si heterostructures with different elastic strain levels already provide expansion of the spectral range, high-speed operation, efficient modulation and switching of optical signals, and enhanced light emission and lasing. This book focuses on the integration of heterostructure devices with silicon photonics. The authors have attempted to merge a concise treatment of classical silicon photonics with a description of principles, prospects, challenges, and technical solution paths of adding silicon-based heterostructures. The book discusses the basics of heterostructure-based silicon photonics, system layouts, and key device components, keeping in mind the application background. Special focus is placed on SOI-based waveguide configurations and Ge- and GeSn-Si heterostructure devices for light detection, modulation, and light emission and lasing. The book also provides an overview of the technological and materials science challenges connected with integration on silicon. The first half of the book is mainly for readers who are interested in the topic because of its increasing importance in different fields, while the latter half covers different device structures for light emission, detection, modulation, extension of the wavelength beyond 1.6 μm, and lasing, as well as future challenges.

Fabrication of SiGe HBT BiCMOS Technology

John D. Cressler
Fabrication of SiGe HBT BiCMOS Technology Book PDF

Author : John D. Cressler
Publisher : CRC Press
Page : 321 pages
File Size : 42,5 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781351834780

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Fabrication of SiGe HBT BiCMOS Technology by John D. Cressler Pdf

SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.