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Strain Effect in Semiconductors by Yongke Sun,Scott E. Thompson,Toshikazu Nishida Pdf
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Stress and Strain Engineering at Nanoscale in Semiconductor Devices by Chinmay K. Maiti Pdf
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Polarization Effects in Semiconductors by Debdeep Jena Pdf
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Strain-Induced Effects in Advanced MOSFETs by Viktor Sverdlov Pdf
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Electrical and Electronic Devices, Circuits, and Materials by Suman Lata Tripathi,Parvej Ahmad Alvi,Umashankar Subramaniam Pdf
The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.
Halide Perovskite Semiconductors by Yuanyuan Zhou,Ivan Mora-Sero Pdf
Halide Perovskite Semiconductors Enables readers to acquire a systematic and in-depth understanding of various fundamental aspects of halide perovskite semiconductors Halide Perovskite Semiconductors: Structures, Characterization, Properties, and Phenomena covers the most fundamental topics with regards to halide perovskites, including but not limited to crystal/defect theory, crystal chemistry, heterogeneity, grain boundaries, single-crystals/thin-films/nanocrystals synthesis, photophysics, solid-state ionics, spin physics, chemical (in)stability, carrier dynamics, hot carriers, surface and interfaces, lower-dimensional structures, and structural/functional characterizations. Included discussions on the fundamentals of halide perovskites aim to expand the basic science fields of physics, chemistry, and materials science. Edited by two highly qualified researchers, Halide Perovskite Semiconductors includes specific information on: Crystal/defect theory of halide perovskites, crystal chemistry of halide perovskites, and processing and microstructures of halide perovskites Single-crystals of halide perovskites, nanocrystals of halide perovskites, low-dimensional perovskite crystals, and nanoscale heterogeneity of halide perovskites Carrier mobilities and dynamics in halide perovskites, light emission of halide perovskites, photophysics and ultrafast spectroscopy of halide perovskites Hot carriers in halide perovskites, correlating photophysics with microstructures in halide perovskites, chemical stability of halide perovskites, and solid-state ionics of halide perovskites Readers can find solutions to technological issues and challenges based on the fundamental knowledge gained from this book. As such, Halide Perovskite Semiconductors is an essential in-depth treatment of the subject, ideal for solid-state chemists, materials scientists, physical chemists, inorganic chemists, physicists, and semiconductor physicists.
Polarization Effects in Semiconductors by Colin Wood,Debdeep Jena Pdf
This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.
Basic Semiconductor Physics by Chihiro Hamaguchi Pdf
When the ?rst edition ofBasic Semiconductor Physics was published in 2001, there were already many books, review papers and scienti?c journals de- ing with various aspects of semiconductor physics. Since many of them were dealing with special aspects of newly observed phenomena or with very f- damental physics, it was very di?cult to understand the advanced physics of semiconductors without the detailed knowledge of semiconductor physics. For this purpose the author published the ?rst edition for the readers who are involved with semiconductor research and development. Basic Semiconductor Physics deals with details of energy band structures, e?ective mass eq- tion and k·p perturbation, and then describes very important phenomena in semiconductors such as optical, transport, magnetoresistance, and quantum phenomena. Some of my friends wrote to me that the textbook is not only basic but advanced, and that the title of the book does not re?ect the c- tents. However, I am still convinced that the title is appropriate, because the advanced physics of semiconductor may be understood with the knowledge of the fundamental physics. In addition new and advanced phenomena - served in semiconductors at an early time are becoming well-known and thus classi?ed in basic physics. After the publication of the ?rst edition, many typographical errors have been pointed out and the corrected version was published in 2006. The p- lisher and my friends persuade me to revise the book adding new chapters, keeping the subject at the appropriate level.
Modern Semiconductor Quantum Physics by Ming-Fu Li Pdf
Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties: absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method,Green's function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance; electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination; negative U center, DX center and EL2 Defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions, quantum wells; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum dots. This book can be used as an advanced textbook on semiconductor physics for graduate students in physics and electrical engineering departments. It is also useful as a research reference for solid state scientists and semiconductor device engineers. Contents:The Energy Band Theory of a Perfect CrystalOptical Properties of SemiconductorsElectronic States at Defects and ImpuritiesSemiconductor SurfacesLow-Dimensional Semiconductor StructuresAppendices Readership: Condensed matter physicists, solid-state chemists, materials scientists, engineers and electronic engineers. keywords:Semiconductor;Physics;Quantum;Energy Bands;Optical Properties;Defects;Surfaces;Low Dimensional Semiconductors
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Compound Semiconductors Strained Layers and Devices by Suresh Jain,Magnus Willander,R. Van Overstraeten Pdf
In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
