Transistor Level Modeling For Analog Rf Ic Design

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Transistor Level Modeling for Analog/RF IC Design

Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs
Transistor Level Modeling for Analog RF IC Design Book PDF

Author : Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs
Publisher : Springer Science & Business Media
Page : 298 pages
File Size : 51,9 Mb
Release : 2006-07-01
Category : Technology & Engineering
ISBN : 9781402045561

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Transistor Level Modeling for Analog/RF IC Design by Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs Pdf

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

CMOS Analog Design Using All-Region MOSFET Modeling

Márcio Cherem Schneider,Carlos Galup-Montoro
CMOS Analog Design Using All Region MOSFET Modeling Book PDF

Author : Márcio Cherem Schneider,Carlos Galup-Montoro
Publisher : Cambridge University Press
Page : 505 pages
File Size : 40,6 Mb
Release : 2010-01-28
Category : Computers
ISBN : 9780521110365

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CMOS Analog Design Using All-Region MOSFET Modeling by Márcio Cherem Schneider,Carlos Galup-Montoro Pdf

The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits

Paul Jespers
The gm ID Methodology a sizing tool for low voltage analog CMOS Circuits Book PDF

Author : Paul Jespers
Publisher : Springer Science & Business Media
Page : 180 pages
File Size : 43,8 Mb
Release : 2009-12-01
Category : Technology & Engineering
ISBN : 9780387471013

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The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits by Paul Jespers Pdf

IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.

Structured Analog CMOS Design

Danica Stefanovic,Maher Kayal
Structured Analog CMOS Design Book PDF

Author : Danica Stefanovic,Maher Kayal
Publisher : Springer Science & Business Media
Page : 290 pages
File Size : 55,8 Mb
Release : 2008-10-20
Category : Technology & Engineering
ISBN : 9781402085734

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Structured Analog CMOS Design by Danica Stefanovic,Maher Kayal Pdf

Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The basic design concept consists in analog cell partitioning into the basic analog structures and sizing of these basic analog structures in a predefined procedural design sequence. The procedural design sequence ensures the correct propagation of design specifications, the verification of parameter limits and the local optimization loops. The proposed design procedure is also implemented as a CAD tool that follows this book.

Charge-Based MOS Transistor Modeling

Christian C. Enz,Eric A. Vittoz
Charge Based MOS Transistor Modeling Book PDF

Author : Christian C. Enz,Eric A. Vittoz
Publisher : John Wiley & Sons
Page : 336 pages
File Size : 45,8 Mb
Release : 2006-08-21
Category : Technology & Engineering
ISBN : UOM:39015064866133

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Charge-Based MOS Transistor Modeling by Christian C. Enz,Eric A. Vittoz Pdf

Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

Viranjay M. Srivastava,Ghanshyam Singh
MOSFET Technologies for Double Pole Four Throw Radio Frequency Switch Book PDF

Author : Viranjay M. Srivastava,Ghanshyam Singh
Publisher : Springer Science & Business Media
Page : 209 pages
File Size : 49,5 Mb
Release : 2013-10-07
Category : Technology & Engineering
ISBN : 9783319011653

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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava,Ghanshyam Singh Pdf

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Process Variations and Probabilistic Integrated Circuit Design

Manfred Dietrich,Joachim Haase
Process Variations and Probabilistic Integrated Circuit Design Book PDF

Author : Manfred Dietrich,Joachim Haase
Publisher : Springer Science & Business Media
Page : 261 pages
File Size : 46,7 Mb
Release : 2011-11-20
Category : Technology & Engineering
ISBN : 9781441966216

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Process Variations and Probabilistic Integrated Circuit Design by Manfred Dietrich,Joachim Haase Pdf

Uncertainty in key parameters within a chip and between different chips in the deep sub micron area plays a more and more important role. As a result, manufacturing process spreads need to be considered during the design process. Quantitative methodology is needed to ensure faultless functionality, despite existing process variations within given bounds, during product development. This book presents the technological, physical, and mathematical fundamentals for a design paradigm shift, from a deterministic process to a probability-orientated design process for microelectronic circuits. Readers will learn to evaluate the different sources of variations in the design flow in order to establish different design variants, while applying appropriate methods and tools to evaluate and optimize their design.

Compact Modeling

Gennady Gildenblat
Compact Modeling Book PDF

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
Page : 531 pages
File Size : 45,6 Mb
Release : 2010-06-22
Category : Technology & Engineering
ISBN : 9789048186143

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Compact Modeling by Gennady Gildenblat Pdf

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

MOSFET Modeling for Circuit Analysis and Design

Carlos Galup-Montoro,M rcio Cherem Schneider
MOSFET Modeling for Circuit Analysis and Design Book PDF

Author : Carlos Galup-Montoro,M rcio Cherem Schneider
Publisher : World Scientific
Page : 445 pages
File Size : 55,7 Mb
Release : 2007
Category : Technology & Engineering
ISBN : 9789812568106

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MOSFET Modeling for Circuit Analysis and Design by Carlos Galup-Montoro,M rcio Cherem Schneider Pdf

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Organic and Inorganic Light Emitting Diodes

T.D. Subash,J. Ajayan,Wladek Grabinski
Organic and Inorganic Light Emitting Diodes Book PDF

Author : T.D. Subash,J. Ajayan,Wladek Grabinski
Publisher : CRC Press
Page : 222 pages
File Size : 52,9 Mb
Release : 2023-06-19
Category : Science
ISBN : 9781000889833

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Organic and Inorganic Light Emitting Diodes by T.D. Subash,J. Ajayan,Wladek Grabinski Pdf

This book covers a comprehensive range of topics on the physical mechanisms of LEDs (light emitting diodes), scattering effects, challenges in fabrication and efficient enhancement techniques in organic and inorganic LEDs. It deals with various reliability issues in organic/inorganic LEDs like trapping and scattering effects, packaging failures, efficiency droops, irradiation effects, thermal degradation mechanisms, and thermal degradation processes. Features: Provides insights into the improvement of performance and reliability of LEDs Highlights the optical power improvement mechanisms in LEDs Covers the challenges in fabrication and packaging of LEDs Discusses pertinent failures and degradation mechanisms Includes droop minimization techniques This book is aimed at researchers and graduate students in LEDs, illumination engineering, optoelectronics, and polymer/organic materials.

CMOS RF Modeling, Characterization and Applications

M. Jamal Deen,Tor A. Fjeldly
CMOS RF Modeling Characterization and Applications Book PDF

Author : M. Jamal Deen,Tor A. Fjeldly
Publisher : World Scientific
Page : 426 pages
File Size : 47,5 Mb
Release : 2002
Category : Science
ISBN : 9810249055

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CMOS RF Modeling, Characterization and Applications by M. Jamal Deen,Tor A. Fjeldly Pdf

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Circuits and Systems Advances in Near Threshold Computing

Sanghamitra Roy
Circuits and Systems Advances in Near Threshold Computing Book PDF

Author : Sanghamitra Roy
Publisher : MDPI
Page : 120 pages
File Size : 42,7 Mb
Release : 2021-05-11
Category : Technology & Engineering
ISBN : 9783036507200

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Circuits and Systems Advances in Near Threshold Computing by Sanghamitra Roy Pdf

Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing.

Load-Pull Techniques with Applications to Power Amplifier Design

Fadhel M. Ghannouchi,Mohammad S. Hashmi
Load Pull Techniques with Applications to Power Amplifier Design Book PDF

Author : Fadhel M. Ghannouchi,Mohammad S. Hashmi
Publisher : Springer Science & Business Media
Page : 241 pages
File Size : 52,7 Mb
Release : 2012-06-06
Category : Science
ISBN : 9789400744615

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Load-Pull Techniques with Applications to Power Amplifier Design by Fadhel M. Ghannouchi,Mohammad S. Hashmi Pdf

This first book on load-pull systems is intended for readers with a broad knowledge of high frequency transistor device characterization, nonlinear and linear microwave measurements, RF power amplifiers and transmitters. Load-Pull Techniques with Applications to Power Amplifier Design fulfills the demands of users, designers, and researchers both from industry and academia who have felt the need of a book on this topic. It presents a comprehensive reference spanning different load-pull measurement systems, waveform measurement and engineering systems, and associated calibration procedures for accurate large signal characterization. Besides, this book also provides in-depth practical considerations required in the realization and usage of load-pull and waveform engineering systems. In addition, it also provides procedure to design application specific load-pull setup and includes several case studies where the user can customize architecture of load-pull setups to meet any specific measurement requirements. Furthermore, the materials covered in this book can be part of a full semester graduate course on microwave device characterization and power amplifier design.

Microwave De-embedding

Manuel Yarlequé,Dominique M.M.-P. Schreurs,Bart Nauwelaers,Davide Resca,Giorgio Vannini
Microwave De embedding Book PDF

Author : Manuel Yarlequé,Dominique M.M.-P. Schreurs,Bart Nauwelaers,Davide Resca,Giorgio Vannini
Publisher : Elsevier Inc. Chapters
Page : 480 pages
File Size : 53,9 Mb
Release : 2013-11-09
Category : Technology & Engineering
ISBN : 9780128068625

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Microwave De-embedding by Manuel Yarlequé,Dominique M.M.-P. Schreurs,Bart Nauwelaers,Davide Resca,Giorgio Vannini Pdf

This chapter aims to describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a three-dimensional (3D) physical model of the network and its electromagnetic (EM) analysis. The electromagnetic behavior is obtained employing 3D EM solvers and internal ports. In the first part, the de-embedding processes for field-effect transistor (FET) devices to be used for monolithic microwave integrated circuit designs are studied by four different approaches; in the second part of this chapter, the de-embedding of FET devices for hybrid circuit design purposes is described.

Nano-scale CMOS Analog Circuits

Soumya Pandit,Chittaranjan Mandal,Amit Patra
Nano scale CMOS Analog Circuits Book PDF

Author : Soumya Pandit,Chittaranjan Mandal,Amit Patra
Publisher : CRC Press
Page : 397 pages
File Size : 50,9 Mb
Release : 2018-09-03
Category : Technology & Engineering
ISBN : 9781466564282

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Nano-scale CMOS Analog Circuits by Soumya Pandit,Chittaranjan Mandal,Amit Patra Pdf

Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.