Transition Metal Impurities In Semiconductors

Author : Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ,Viktor Ilʹich Fistulʹ
Publisher : CRC Press
Page : 262 pages
File Size : 52,7 Mb
Release : 1986
Category : Art
ISBN : UOM:39015013044840

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Transition Metal Impurities in Semiconductors, by Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ,Viktor Ilʹich Fistulʹ Pdf

The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.

Author : Victor N Fleurov,K A Kikoin
Publisher : World Scientific
Page : 361 pages
File Size : 54,5 Mb
Release : 1994-08-31
Category : Science
ISBN : 9789814501606

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Transition Metal Impurities In Semiconductors by Victor N Fleurov,K A Kikoin Pdf

This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (TiO2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.

Author : Klaus Graff
Publisher : Springer Science & Business Media
Page : 228 pages
File Size : 50,8 Mb
Release : 2013-03-08
Category : Technology & Engineering
ISBN : 9783642975936

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Metal Impurities in Silicon-Device Fabrication by Klaus Graff Pdf

A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

Author : K. A. Kikoin,Viktor Nikolaevich Fl‰rov
Publisher : World Scientific
Page : 368 pages
File Size : 55,5 Mb
Release : 1994
Category : Technology & Engineering
ISBN : 9810218834

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Transition Metal Impurities in Semiconductors by K. A. Kikoin,Viktor Nikolaevich Fl‰rov Pdf

This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.

Author : Cor Claeys,Eddy Simoen
Publisher : Springer
Page : 438 pages
File Size : 55,5 Mb
Release : 2018-08-13
Category : Technology & Engineering
ISBN : 9783319939254

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Metal Impurities in Silicon- and Germanium-Based Technologies by Cor Claeys,Eddy Simoen Pdf

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Author : Jörg Dreyhsig
Publisher : Unknown
Page : 333 pages
File Size : 55,9 Mb
Release : 1994
Category : Cobalt
ISBN : 3928943162

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The Multiplet Problem of 3d Transition Metal Impurities in Semiconductors by Jörg Dreyhsig Pdf

Author : Cor L. Claeys,Eddy Simoen
Publisher : Unknown
Page : 128 pages
File Size : 52,5 Mb
Release : 2018
Category : Metals
ISBN : 3319939262

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Metal Impurities in Silicon- and Germanium-based Technologies by Cor L. Claeys,Eddy Simoen Pdf

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.

Author : Stanford University. Stanford Electronics Laboratories
Publisher : Unknown
Page : 74 pages
File Size : 55,5 Mb
Release : 1967
Category : Electronic
ISBN : STANFORD:36105046376708

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Transition Metal Impurities in Semiconductors by Stanford University. Stanford Electronics Laboratories Pdf

Author : Bernard Pajot,Bernard Clerjaud
Publisher : Springer Science & Business Media
Page : 532 pages
File Size : 53,8 Mb
Release : 2012-08-28
Category : Science
ISBN : 9783642180187

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Optical Absorption of Impurities and Defects in Semiconducting Crystals by Bernard Pajot,Bernard Clerjaud Pdf

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Author : Tomasz Dietl,David D. Awschalom,Maria Kaminska,Hideo Ohno
Publisher : Academic Press
Page : 536 pages
File Size : 53,7 Mb
Release : 2009-02-12
Category : Technology & Engineering
ISBN : 0080914217

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Spintronics by Tomasz Dietl,David D. Awschalom,Maria Kaminska,Hideo Ohno Pdf

This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge. In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date. Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated. Spintronics has emerged as one of the fastest growing areas of research This text presents an in-depth examination of the most recent technological spintronic developments Includes contributions from leading scholars and industry experts

Author : M Levinshtein,M Shur
Publisher : World Scientific
Page : 664 pages
File Size : 55,9 Mb
Release : 1995-12-08
Category : Science
ISBN : 9789814502627

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Best of Soviet Semiconductor Physics and Technology (1989 – 1990) by M Levinshtein,M Shur Pdf

Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world. This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all — one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step. Contents:Reviews (Yu Gal'perin)Semiconductor Theory (D Polyakov)Semiconductor Physics (E Ivchenko)Material Growth and Material Properties (R Suris)A3B5 Compound Semiconductor Devices (S Gurevich)Other Semiconductor Devices (M Levinshtein & V Dmitriev)and other papers Readership: Semiconductor physicists, condensed matter physicists and engineers. keywords:

Author : S Canuto,J D'a Castro,F Paixao
Publisher : World Scientific
Page : 182 pages
File Size : 41,6 Mb
Release : 1990-05-01
Category : Electronic
ISBN : 9789814611992

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Electronic Structure Of Atoms, Molecules And Solids - Proceedings Of 2nd Brazilian School by S Canuto,J D'a Castro,F Paixao Pdf

This book focuses on spearheading the integration of maintainability and green facility management right from the design stage. The text introduces the concept of green maintainability, and discusses considerations to maximize the performance by achieving resource and energy efficiency, while minimizing the total life cycle cost in embodied energy; environmental impact and consumption of matter/energy throughout the life cycle of a facility, by 'doing it right the first time'.In this edition, existing chapters have been brought up to date, to include contemporary sustainability concerns, such as: sustainability design, construction and materials, and maintainability of green features.Maintainability of Facilities is written for practitioners and students in architecture, engineering, building, real estate, construction, project management, facilities management, quantity and building surveying.

Author : Stephen J. Pearton
Publisher : CRC Press
Page : 456 pages
File Size : 44,5 Mb
Release : 2021-10-08
Category : Science
ISBN : 9781000445695

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GaN and Related Materials by Stephen J. Pearton Pdf

Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Author : Mikhail Efimovich Levinshte?n
Publisher : World Scientific
Page : 668 pages
File Size : 40,8 Mb
Release : 1995
Category : Science
ISBN : 9810215797

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Best of Soviet Semiconductor Physics and Technology, 1989-1990 by Mikhail Efimovich Levinshte?n Pdf

Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world.This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all ? one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step.

Author : Volkmar Dierolf,Ian Ferguson,John M Zavada
Publisher : Woodhead Publishing
Page : 470 pages
File Size : 52,9 Mb
Release : 2016-01-23
Category : Science
ISBN : 9780081000601

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Rare Earth and Transition Metal Doping of Semiconductor Materials by Volkmar Dierolf,Ian Ferguson,John M Zavada Pdf

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics