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Author : J. Hite,V. Chakrapani,J. Zavada,T. J. Anderson,S. Kilgore
Publisher : The Electrochemical Society
Page : 130 pages
File Size : 46,9 Mb
Release : 2018-05-04
Category : Science
ISBN : 9781607688358
Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Page : 325 pages
File Size : 49,8 Mb
Release : 2016-11-03
Category : Computers
ISBN : 9781315351834
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author : J. A. Bardwell
Publisher : The Electrochemical Society
Page : 222 pages
File Size : 43,8 Mb
Release : 2011-04
Category : Technology & Engineering
ISBN : 9781566778671
This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.
Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
Publisher : John Wiley & Sons
Page : 743 pages
File Size : 47,8 Mb
Release : 2022-01-10
Category : Technology & Engineering
ISBN : 9783527346714
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Author : Uttam Singisetti,Towhidur Razzak,Yuewei Zhang
Publisher : World Scientific
Page : 258 pages
File Size : 43,7 Mb
Release : 2019-12-10
Category : Technology & Engineering
ISBN : 9789811216497
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author : Meiyong Liao,Bo Shen,Zhanguo Wang
Publisher : Elsevier
Page : 503 pages
File Size : 52,9 Mb
Release : 2019-06-18
Category : Technology & Engineering
ISBN : 9780128172568
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author : S. Jang,V. Chakrapani,J. Zavada,T. J. Anderson,J. Hite,E. Douglas
Publisher : The Electrochemical Society
Page : 53 pages
File Size : 51,8 Mb
Release : 2019-05-17
Category : Science
ISBN : 9781607688709
This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 54,6 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Author : Fan Ren,S. J. Pearton,Institute of Physics (Great Britain)
Publisher : Unknown
Page : 0 pages
File Size : 54,7 Mb
Release : 2020
Category : Gallium arsenide semiconductors
ISBN : 075032516X
"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.
Author : Anonim
Publisher : Unknown
Page : 210 pages
File Size : 41,5 Mb
Release : 2011
Category : Electrochemistry
ISBN : 1607682176
Author : V. Chakrapani,S. Calabrese Barton,J. Zavada,S. Jang,T. Anderson,J. Hite
Publisher : The Electrochemical Society
Page : 172 pages
File Size : 48,6 Mb
Release : 2017
Category : Electronic
ISBN : 9781607688099
Author : R. Szweda
Publisher : Elsevier
Page : 446 pages
File Size : 40,9 Mb
Release : 2000-07-07
Category : Technology & Engineering
ISBN : 0080532306
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author : S. Jang,K. Shenai,G. W. Hunter,F. Ren,C. O’Dwyer,K. Mishra
Publisher : The Electrochemical Society
Page : 347 pages
File Size : 47,6 Mb
Release : 2015
Category : Electronic
ISBN : 9781607685913
Author : National Research Council,Division on Engineering and Physical Sciences,National Materials Advisory Board,Commission on Engineering and Technical Systems,Committee on Materials for High-Temperature Semiconductor Devices
Publisher : National Academies Press
Page : 135 pages
File Size : 46,9 Mb
Release : 1995-09-14
Category : Technology & Engineering
ISBN : 9780309176057
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Author : John Zavada,Vidhya Chakrapani,Soohwan Jang,Travis Anderson,Jennifer Hite
Publisher : The Electrochemical Society
Page : 118 pages
File Size : 53,9 Mb
Release : 2024-06-29
Category : Electronic
ISBN : 9781607687153
