Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 5 New Materials Processes And Equipment

Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 50,6 Mb
Release : 2009-05
Category : Gate array circuits
ISBN : 9781566777094

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by V. Narayanan Pdf

This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : Anonim
Publisher : Unknown
Page : 658 pages
File Size : 50,8 Mb
Release : 2005
Category : Technology & Engineering
ISBN : STANFORD:36105120928333

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Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS by Anonim Pdf

Author : P. J. Timans
Publisher : The Electrochemical Society
Page : 488 pages
File Size : 46,8 Mb
Release : 2008-05
Category : Gate array circuits
ISBN : 9781566776264

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by P. J. Timans Pdf

This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : Fred Roozeboom
Publisher : The Electrochemical Society
Page : 472 pages
File Size : 41,9 Mb
Release : 2006
Category : Gate array circuits
ISBN : 9781566775021

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Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 by Fred Roozeboom Pdf

These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : E. P. Gusev
Publisher : The Electrochemical Society
Page : 426 pages
File Size : 44,6 Mb
Release : 2010-04
Category : Science
ISBN : 9781566777919

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment by E. P. Gusev Pdf

These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 51,7 Mb
Release : 2006
Category : Dielectrics
ISBN : 9781566775038

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Physics and Technology of High-k Gate Dielectrics 4 by Samares Kar Pdf

This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
Page : 516 pages
File Size : 53,8 Mb
Release : 2006-01-27
Category : Computers
ISBN : 1402043651

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Defects in HIgh-k Gate Dielectric Stacks by Evgeni Gusev Pdf

The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Author : G. Mathad
Publisher : The Electrochemical Society
Page : 89 pages
File Size : 53,6 Mb
Release : 2008-11
Category : Science
ISBN : 9781566776653

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Plasma Processing 17 by G. Mathad Pdf

This issue of ECS Transactions contains papers presented at the International Symposium on Plasma Processing. The symposium, 17th in the series, cosponsored by the Dielectric Science & Technology, Electronics, and Photonics Divisions was held as part of the 213th Meeting of The Electrochemical Society, Inc., in Phoenix, AZ, USA, May 18 - 23, 2008. A total of 14 papers were presented from Belgium, Germany, Italy, Japan, Republic of Korea, Russia, and the USA on topics mainly focused on diagnostics & measurements and etching & deposition processes.

Author : J. Weidner
Publisher : The Electrochemical Society
Page : 123 pages
File Size : 42,5 Mb
Release : 2009-03
Category : Science
ISBN : 9781566777216

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Solid State (General) - 214th ECS Meeting/PRiME 2008 by J. Weidner Pdf

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid-State Topics General Session¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.

Author : Anonim
Publisher : Unknown
Page : 1020 pages
File Size : 54,6 Mb
Release : 2009
Category : Electrochemistry
ISBN : UCSD:31822036942399

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Journal of the Electrochemical Society by Anonim Pdf

Author : Massimo Macucci,Giovanni Basso
Publisher : American Institute of Physics
Page : 692 pages
File Size : 52,6 Mb
Release : 2009-05-13
Category : Science
ISBN : UCSD:31822037777802

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Noise and Fluctuations by Massimo Macucci,Giovanni Basso Pdf

The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.

Author : Anonim
Publisher : Unknown
Page : 696 pages
File Size : 43,9 Mb
Release : 2006
Category : Computers
ISBN : UOM:39015065055900

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IBM Journal of Research and Development by Anonim Pdf

Author : Alexander A. Demkov,Bill Taylor,H. Rusty Harris,Jeffery W. Butterbaugh,Willy Rachmady
Publisher : Cambridge University Press
Page : 194 pages
File Size : 53,8 Mb
Release : 2014-06-05
Category : Technology & Engineering
ISBN : 1107408326

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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: by Alexander A. Demkov,Bill Taylor,H. Rusty Harris,Jeffery W. Butterbaugh,Willy Rachmady Pdf

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Author : Mehmet C. Öztürk,Fred Roozeboom
Publisher : The Electrochemical Society
Page : 444 pages
File Size : 41,9 Mb
Release : 2004
Category : Technology & Engineering
ISBN : 1566774063

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Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 by Mehmet C. Öztürk,Fred Roozeboom Pdf

Author : Duygu Kuzum
Publisher : Stanford University
Page : 159 pages
File Size : 43,5 Mb
Release : 2009
Category : Electronic
ISBN : STANFORD:vh980ht4102

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Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications by Duygu Kuzum Pdf

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.