Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 6 New Materials Processes And Equipment

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

E. P. Gusev
Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 6 New Materials Processes and Equipment Book PDF

Author : E. P. Gusev
Publisher : The Electrochemical Society
Page : 426 pages
File Size : 54,6 Mb
Release : 2010-04
Category : Science
ISBN : 9781566777919

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment by E. P. Gusev Pdf

These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

P. J. Timans
Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 4 New Materials Processes and Equipment Book PDF

Author : P. J. Timans
Publisher : The Electrochemical Society
Page : 488 pages
File Size : 45,8 Mb
Release : 2008-05
Category : Gate array circuits
ISBN : 9781566776264

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by P. J. Timans Pdf

This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2

Fred Roozeboom
Advanced Gate Stack Source drain and Channel Engineering for Si based CMOS 2 Book PDF

Author : Fred Roozeboom
Publisher : The Electrochemical Society
Page : 472 pages
File Size : 55,9 Mb
Release : 2006
Category : Gate array circuits
ISBN : 9781566775021

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Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 by Fred Roozeboom Pdf

These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment

V. Narayanan
Advanced Gate Stack Source Drain and Channel Engineering for Si Based CMOS 5 New Materials Processes and Equipment Book PDF

Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 44,9 Mb
Release : 2009-05
Category : Gate array circuits
ISBN : 9781566777094

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by V. Narayanan Pdf

This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Plasma Processing 17

G. Mathad
Plasma Processing 17 Book PDF

Author : G. Mathad
Publisher : The Electrochemical Society
Page : 89 pages
File Size : 40,7 Mb
Release : 2008-11
Category : Science
ISBN : 9781566776653

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Plasma Processing 17 by G. Mathad Pdf

This issue of ECS Transactions contains papers presented at the International Symposium on Plasma Processing. The symposium, 17th in the series, cosponsored by the Dielectric Science & Technology, Electronics, and Photonics Divisions was held as part of the 213th Meeting of The Electrochemical Society, Inc., in Phoenix, AZ, USA, May 18 - 23, 2008. A total of 14 papers were presented from Belgium, Germany, Italy, Japan, Republic of Korea, Russia, and the USA on topics mainly focused on diagnostics & measurements and etching & deposition processes.

Physics and Technology of High-k Gate Dielectrics 4

Samares Kar
Physics and Technology of High k Gate Dielectrics 4 Book PDF

Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 42,7 Mb
Release : 2006
Category : Dielectrics
ISBN : 9781566775038

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Physics and Technology of High-k Gate Dielectrics 4 by Samares Kar Pdf

This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Solid State (General) - 214th ECS Meeting/PRiME 2008

J. Weidner
Solid State General 214th ECS Meeting PRiME 2008 Book PDF

Author : J. Weidner
Publisher : The Electrochemical Society
Page : 123 pages
File Size : 51,5 Mb
Release : 2009-03
Category : Science
ISBN : 9781566777216

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Solid State (General) - 214th ECS Meeting/PRiME 2008 by J. Weidner Pdf

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid-State Topics General Session¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.

Noise and Fluctuations

Massimo Macucci,Giovanni Basso
Noise and Fluctuations Book PDF

Author : Massimo Macucci,Giovanni Basso
Publisher : American Institute of Physics
Page : 692 pages
File Size : 49,6 Mb
Release : 2009-05-13
Category : Science
ISBN : UCSD:31822037777802

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Noise and Fluctuations by Massimo Macucci,Giovanni Basso Pdf

The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.

Journal of the Electrochemical Society

Anonim
Journal of the Electrochemical Society Book PDF

Author : Anonim
Publisher : Unknown
Page : 1020 pages
File Size : 50,5 Mb
Release : 2009
Category : Electrochemistry
ISBN : UCSD:31822036942399

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Journal of the Electrochemical Society by Anonim Pdf

IBM Journal of Research and Development

Anonim
IBM Journal of Research and Development Book PDF

Author : Anonim
Publisher : Unknown
Page : 696 pages
File Size : 45,9 Mb
Release : 2006
Category : Computers
ISBN : UOM:39015065055900

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IBM Journal of Research and Development by Anonim Pdf

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications

Duygu Kuzum
Interface engineered Ge MOSFETs for Future High Performance CMOS Applications Book PDF

Author : Duygu Kuzum
Publisher : Stanford University
Page : 159 pages
File Size : 46,6 Mb
Release : 2009
Category : Electronic
ISBN : STANFORD:vh980ht4102

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Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications by Duygu Kuzum Pdf

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.

Advanced Short-time Thermal Processing for Si-based CMOS Devices 2

Mehmet C. Öztürk,Fred Roozeboom
Advanced Short time Thermal Processing for Si based CMOS Devices 2 Book PDF

Author : Mehmet C. Öztürk,Fred Roozeboom
Publisher : The Electrochemical Society
Page : 444 pages
File Size : 48,5 Mb
Release : 2004
Category : Technology & Engineering
ISBN : 1566774063

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Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 by Mehmet C. Öztürk,Fred Roozeboom Pdf

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

Guilei Wang
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond Book PDF

Author : Guilei Wang
Publisher : Springer
Page : 115 pages
File Size : 41,7 Mb
Release : 2020-10-02
Category : Technology & Engineering
ISBN : 9811500487

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by Guilei Wang Pdf

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Jacopo Franco,Ben Kaczer,Guido Groeseneken
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications Book PDF

Author : Jacopo Franco,Ben Kaczer,Guido Groeseneken
Publisher : Springer Science & Business Media
Page : 203 pages
File Size : 48,5 Mb
Release : 2013-10-19
Category : Technology & Engineering
ISBN : 9789400776630

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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by Jacopo Franco,Ben Kaczer,Guido Groeseneken Pdf

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.