Analysis And Simulation Of Heterostructure Devices

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Analysis and Simulation of Heterostructure Devices

Author : Vassil Palankovski,Rüdiger Quay
Publisher : Springer Science & Business Media
Page : 309 pages
File Size : 50,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105603

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Analysis and Simulation of Heterostructure Devices by Vassil Palankovski,Rüdiger Quay Pdf

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

High-Speed Heterostructure Devices

Author : Patrick Roblin,Hans Rohdin
Publisher : Cambridge University Press
Page : 726 pages
File Size : 40,8 Mb
Release : 2002-03-07
Category : Technology & Engineering
ISBN : 9781139437462

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High-Speed Heterostructure Devices by Patrick Roblin,Hans Rohdin Pdf

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

Author : Niccolò Rinaldi,Michael Schröter
Publisher : CRC Press
Page : 377 pages
File Size : 40,9 Mb
Release : 2022-09-01
Category : Technology & Engineering
ISBN : 9781000794403

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by Niccolò Rinaldi,Michael Schröter Pdf

The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Applications of Silicon-Germanium Heterostructure Devices

Author : C.K Maiti,G.A Armstrong
Publisher : CRC Press
Page : 402 pages
File Size : 51,6 Mb
Release : 2001-07-20
Category : Science
ISBN : 9781420034691

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Applications of Silicon-Germanium Heterostructure Devices by C.K Maiti,G.A Armstrong Pdf

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Author : G.A. Armstrong,C.K. Maiti
Publisher : IET
Page : 457 pages
File Size : 48,9 Mb
Release : 2007-11-30
Category : Technology & Engineering
ISBN : 9780863417436

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Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits by G.A. Armstrong,C.K. Maiti Pdf

The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Measurement and Modeling of Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
Page : 200 pages
File Size : 42,6 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781420066937

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Measurement and Modeling of Silicon Heterostructure Devices by John D. Cressler Pdf

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Simulation of Semiconductor Processes and Devices 2007

Author : Tibor Grasser,Siegfried Selberherr
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 53,9 Mb
Release : 2007-11-18
Category : Technology & Engineering
ISBN : 9783211728611

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Simulation of Semiconductor Processes and Devices 2007 by Tibor Grasser,Siegfried Selberherr Pdf

This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.

Physics and Technology of Heterojunction Devices

Author : Institution of Electrical Engineers
Publisher : IET
Page : 330 pages
File Size : 41,5 Mb
Release : 1991
Category : Science
ISBN : 0863412041

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Physics and Technology of Heterojunction Devices by Institution of Electrical Engineers Pdf

This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.

Electrically Driven Quantum Dot Based Single-Photon Sources

Author : Markus Kantner
Publisher : Springer Nature
Page : 190 pages
File Size : 49,9 Mb
Release : 2020-01-25
Category : Science
ISBN : 9783030395438

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Electrically Driven Quantum Dot Based Single-Photon Sources by Markus Kantner Pdf

Semiconductor quantum optics is on the verge of moving from the lab to real world applications. When stepping from basic research to new technologies, device engineers will need new simulation tools for the design and optimization of quantum light sources, which combine classical device physics with cavity quantum electrodynamics. This thesis aims to provide a holistic description of single-photon emitting diodes by bridging the gap between microscopic and macroscopic modeling approaches. The central result is a novel hybrid quantum-classical model system that self-consistently couples semi-classical carrier transport theory with open quantum many-body systems. This allows for a comprehensive description of quantum light emitting diodes on multiple scales: It enables the calculation of the quantum optical figures of merit together with the simulation of the spatially resolved current flow in complex, multi-dimensional semiconductor device geometries out of one box. The hybrid system is shown to be consistent with fundamental laws of (non-)equilibrium thermodynamics and is demonstrated by numerical simulations of realistic devices.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 554 pages
File Size : 52,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979

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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by Peter Pichler Pdf

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Nano-Electronic Devices

Author : Dragica Vasileska,Stephen M. Goodnick
Publisher : Springer Science & Business Media
Page : 441 pages
File Size : 51,8 Mb
Release : 2011-06-10
Category : Technology & Engineering
ISBN : 9781441988409

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Nano-Electronic Devices by Dragica Vasileska,Stephen M. Goodnick Pdf

This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.

Nonlinear Differential Equation Models

Author : Ansgar Jüngel,Raul Manasevich,Peter A. Markowich,Henrik Shahgholian
Publisher : Springer Science & Business Media
Page : 195 pages
File Size : 42,7 Mb
Release : 2012-12-06
Category : Mathematics
ISBN : 9783709106099

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Nonlinear Differential Equation Models by Ansgar Jüngel,Raul Manasevich,Peter A. Markowich,Henrik Shahgholian Pdf

The papers in this book originate from lectures which were held at the "Vienna Workshop on Nonlinear Models and Analysis" – May 20–24, 2002. They represent a cross-section of the research field Applied Nonlinear Analysis with emphasis on free boundaries, fully nonlinear partial differential equations, variational methods, quasilinear partial differential equations and nonlinear kinetic models.

Semiconductor Nanophotonics

Author : Michael Kneissl,Andreas Knorr,Stephan Reitzenstein,Axel Hoffmann
Publisher : Springer Nature
Page : 572 pages
File Size : 44,6 Mb
Release : 2020-03-10
Category : Technology & Engineering
ISBN : 9783030356569

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Semiconductor Nanophotonics by Michael Kneissl,Andreas Knorr,Stephan Reitzenstein,Axel Hoffmann Pdf

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Modelling of Interface Carrier Transport for Device Simulation

Author : Dietmar Schroeder
Publisher : Springer Science & Business Media
Page : 234 pages
File Size : 50,7 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9783709166444

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Modelling of Interface Carrier Transport for Device Simulation by Dietmar Schroeder Pdf

This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.