Characterization Of Crystal Growth Defects By X Ray Methods

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Characterization of Crystal Growth Defects by X-Ray Methods

B.K. Tanner
Characterization of Crystal Growth Defects by X Ray Methods Book PDF

Author : B.K. Tanner
Publisher : Springer Science & Business Media
Page : 615 pages
File Size : 52,9 Mb
Release : 2013-04-17
Category : Science
ISBN : 9781475711264

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Characterization of Crystal Growth Defects by X-Ray Methods by B.K. Tanner Pdf

This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

Research on Crystal Growth and Defect Characterization at the National Bureau of Standards During the Period July to December 1962

United States. National Bureau of Standards
Research on Crystal Growth and Defect Characterization at the National Bureau of Standards During the Period July to December 1962 Book PDF

Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 40 pages
File Size : 46,7 Mb
Release : 1963
Category : Crystal growth
ISBN : UOM:39015077289935

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Research on Crystal Growth and Defect Characterization at the National Bureau of Standards During the Period July to December 1962 by United States. National Bureau of Standards Pdf

Research on Crystal Growth and Characterization at the National Bureau of Standards

Herbert Steffen Peiser
Research on Crystal Growth and Characterization at the National Bureau of Standards Book PDF

Author : Herbert Steffen Peiser
Publisher : Unknown
Page : 76 pages
File Size : 47,5 Mb
Release : 1963
Category : Crystal growth
ISBN : UIUC:30112105096173

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Research on Crystal Growth and Characterization at the National Bureau of Standards by Herbert Steffen Peiser Pdf

The National Bureau of Standards is continuing diverse research projects on the growth and characterization of crystals.This note summarizes the individual NBS activities in this and closely related fields during July to December, 1963. Lists of NBS publications appertaining to *that period and of participating NBS scientists are appended.(Author).

Research on Crystal Growth and Characterization at the National Bureau of Standards January to June 1964

Howard F. McMurdie
Research on Crystal Growth and Characterization at the National Bureau of Standards January to June 1964 Book PDF

Author : Howard F. McMurdie
Publisher : Unknown
Page : 80 pages
File Size : 44,8 Mb
Release : 1964
Category : Crystal growth
ISBN : UIUC:30112106612002

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Research on Crystal Growth and Characterization at the National Bureau of Standards January to June 1964 by Howard F. McMurdie Pdf

A wide program of studies involving crystalline materials includes investigation of methods and theory of growth, study of detection and effects of defects, determination of physical properties, refinement of ch * emical analysis, and determination of stability relations and atomic structure.The types of materials range from organic compounds, through metals, and inorganic salts to refractory oxides.(Author).

Introduction to Crystal Growth and Characterization

Klaus-Werner Benz,Wolfgang Neumann
Introduction to Crystal Growth and Characterization Book PDF

Author : Klaus-Werner Benz,Wolfgang Neumann
Publisher : John Wiley & Sons
Page : 559 pages
File Size : 41,7 Mb
Release : 2014-07-28
Category : Technology & Engineering
ISBN : 9783527684342

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Introduction to Crystal Growth and Characterization by Klaus-Werner Benz,Wolfgang Neumann Pdf

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase diagrams in the solid and liquid phases in correlation with the segregation of dopants are treated on a macro- and microscale. Fluid dynamic aspects with different types of convection in melts and solutions are discussed. Various growth techniques for semiconducting materials in connection with the use of external field (magnetic fields and microgravity) are described. Crystal characterization as the overall assessment of the grown crystal is treated in detail with respect to - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and engineering. It is also a valuable resource for all scientists concerned with crystal growth and materials engineering.

Crystal Growth and Characterization of Advanced Materials

A N Christensen,F Leccabue,C Paorici,O Vigil
Crystal Growth and Characterization of Advanced Materials Book PDF

Author : A N Christensen,F Leccabue,C Paorici,O Vigil
Publisher : World Scientific
Page : 560 pages
File Size : 54,6 Mb
Release : 1988-12-31
Category : Science
ISBN : 9789814611121

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Crystal Growth and Characterization of Advanced Materials by A N Christensen,F Leccabue,C Paorici,O Vigil Pdf

Contents:Fundamental Aspects of Crystal Growth from the Melt (C Paorici & L Zanotti)Phase Diagrams in Crystal Growth (A N Christensen)Growth Procedures and Perfection of Semiconductor Materials (A Lindegaard-Andersen)Atomistic Aspects of Crystal Growth and Epitaxy (I Markov)Fundamentals of Liquid Phase Epitaxial Growth (P Kordos)Determination of Few Selected Basic Parameters of the Investigation of AIII-BV Semiconductors Using X-Ray Methods (H Bruhl)Multijunction Solar Cells (I Chambouleyron)Application of the Mossbauer Spectroscopy to the Study of Magnetic Materials (G Albanese)Metallic Magnetism in Modern Materials (D Givord)and others Readership: Materials scientists.

X-Ray Diffraction Topography

B. K. Tanner
X Ray Diffraction Topography Book PDF

Author : B. K. Tanner
Publisher : Elsevier
Page : 189 pages
File Size : 54,7 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483187686

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X-Ray Diffraction Topography by B. K. Tanner Pdf

X-Ray Diffraction Topography presents an elementary treatment of X-ray topography which is comprehensible to the non-specialist. It discusses the development of the principles and application of the subject matter. X-ray topography is the study of crystals which use x-ray diffraction. Some of the topics covered in the book are the basic dynamical x-ray diffraction theory, the Berg-Barrett method, Lang’s method, double crystal methods, the contrast on x-ray topography, and the analysis of crystal defects and distortions. The crystals grown from solution are covered. The naturally occurring crystals are discussed. The text defines the meaning of melt, solid state and vapour growth. An analysis of the properties of inorganic crystals is presented. A chapter of the volume is devoted to the characteristics of metals. Another section of the book focuses on the production of ice crystals and the utilization of oxides as laser materials. The book will provide useful information to chemists, scientists, students and researchers.

Springer Handbook of Crystal Growth

Govindhan Dhanaraj,Kullaiah Byrappa,Vishwanath Prasad,Michael Dudley
Springer Handbook of Crystal Growth Book PDF

Author : Govindhan Dhanaraj,Kullaiah Byrappa,Vishwanath Prasad,Michael Dudley
Publisher : Springer Science & Business Media
Page : 1823 pages
File Size : 43,6 Mb
Release : 2010-10-20
Category : Science
ISBN : 9783540747611

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Springer Handbook of Crystal Growth by Govindhan Dhanaraj,Kullaiah Byrappa,Vishwanath Prasad,Michael Dudley Pdf

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Research on Crystal Growth and Characterization at the National Bureau of Standards During the Period January to June 1963

Herbert Steffen Peiser
Research on Crystal Growth and Characterization at the National Bureau of Standards During the Period January to June 1963 Book PDF

Author : Herbert Steffen Peiser
Publisher : Unknown
Page : 52 pages
File Size : 47,5 Mb
Release : 1963
Category : Crystal growth
ISBN : UOM:39015077289810

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Research on Crystal Growth and Characterization at the National Bureau of Standards During the Period January to June 1963 by Herbert Steffen Peiser Pdf

The National Bureau of Standards is continuing diverse research projects on the growth and characterization of crystals.This note summarizes the individual NBS activities in this and closely related fie lds during January to July 1963. Lists of NBS publications appertaining to that period and of participating NBS scientists are appended.(Author).

X-Ray and Neutron Dynamical Diffraction

André Authier,Stefano Lagomarsino,Brian K. Tanner
X Ray and Neutron Dynamical Diffraction Book PDF

Author : André Authier,Stefano Lagomarsino,Brian K. Tanner
Publisher : Springer Science & Business Media
Page : 419 pages
File Size : 51,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461558798

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X-Ray and Neutron Dynamical Diffraction by André Authier,Stefano Lagomarsino,Brian K. Tanner Pdf

This volume collects the proceedings of the 23rd International Course of Crystallography, entitled "X-ray and Neutron Dynamical Diffraction, Theory and Applications," which took place in the fascinating setting of Erice in Sicily, Italy. It was run as a NATO Advanced Studies Institute with A. Authier (France) and S. Lagomarsino (Italy) as codirectors, and L. Riva di Sanseverino and P. Spadon (Italy) as local organizers, R. Colella (USA) and B. K. Tanner (UK) being the two other members of the organizing committee. It was attended by about one hundred participants from twenty four different countries. Two basic theories may be used to describe the diffraction of radiation by crystalline matter. The first one, the so-called geometrical, or kinematical theory, is approximate and is applicable to small, highly imperfect crystals. It is used for the determination of crystal structures and describes the diffraction of powders and polycrystalline materials. The other one, the so-called dynamical theory, is applicable to perfect or nearly perfect crystals. For that reason, dynamical diffraction of X-rays and neutrons constitutes the theoretical basis of a great variety of applications such as: • the techniques used for the characterization of nearly perfect high technology materials, semiconductors, piezoelectric, electrooptic, ferroelectric, magnetic crystals, • the X-ray optical devices used in all modem applications of Synchrotron Radiation (EXAFS, High Resolution X-ray Diffractometry, magnetic and nuclear resonant scattering, topography, etc. ), and • X-ray and neutron interferometry.

Crystal Growth Technology

Kullaiah Byrappa,Tadashi Ohachi
Crystal Growth Technology Book PDF

Author : Kullaiah Byrappa,Tadashi Ohachi
Publisher : Elsevier
Page : 611 pages
File Size : 49,8 Mb
Release : 2003-03-21
Category : Science
ISBN : 9780815516804

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Crystal Growth Technology by Kullaiah Byrappa,Tadashi Ohachi Pdf

Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with ""Growth Histories of Mineral Crystals"" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.

Semiconductor Material and Device Characterization

Dieter K. Schroder
Semiconductor Material and Device Characterization Book PDF

Author : Dieter K. Schroder
Publisher : John Wiley & Sons
Page : 800 pages
File Size : 45,9 Mb
Release : 2006-02-10
Category : Technology & Engineering
ISBN : 9780471749080

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Semiconductor Material and Device Characterization by Dieter K. Schroder Pdf

This Third Edition updates a landmark text with thelatest findings The Third Edition of the internationally laudedSemiconductor Material and Device Characterization bringsthe text fully up-to-date with the latest developments in the fieldand includes new pedagogical tools to assist readers. Not only doesthe Third Edition set forth all the latest measurementtechniques, but it also examines new interpretations and newapplications of existing techniques. Semiconductor Material and Device Characterizationremains the sole text dedicated to characterization techniques formeasuring semiconductor materials and devices. Coverage includesthe full range of electrical and optical characterization methods,including the more specialized chemical and physical techniques.Readers familiar with the previous two editions will discover athoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the mostcurrent data and information 260 new references offering access to the latest research anddiscussions in specialized topics New problems and review questions at the end of each chapter totest readers' understanding of the material In addition, readers will find fully updated and revisedsections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-basedmeasurement and Kelvin probes. This chapter also examinesprobe-based measurements, including scanning capacitance, scanningKelvin force, scanning spreading resistance, and ballistic electronemission microscopy. Reliability and Failure Analysis examines failure times anddistribution functions, and discusses electromigration, hotcarriers, gate oxide integrity, negative bias temperatureinstability, stress-induced leakage current, and electrostaticdischarge. Written by an internationally recognized authority in the field,Semiconductor Material and Device Characterization remainsessential reading for graduate students as well as forprofessionals working in the field of semiconductor devices andmaterials. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.