Copper Fundamental Mechanisms For Microelectronic Applications

Author : Shyam P. Murarka,Igor V. Verner,Ronald J. Gutmann
Publisher : Wiley-Interscience
Page : 376 pages
File Size : 48,7 Mb
Release : 2000-04-06
Category : Science
ISBN : UOM:39015048830288

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Copper -- Fundamental Mechanisms for Microelectronic Applications by Shyam P. Murarka,Igor V. Verner,Ronald J. Gutmann Pdf

A complete guide to the state of the art and future direction of copper interconnect technology Owing to its performance advantages, copper metallization for IC interconnect is attracting tremendous interest in the semiconductor community worldwide. This timely book provides scientists and engineers with a much-needed, comprehensive reference on the fundamentals and applications of this emerging technology. The authors draw on more than a decade of intimate involvement with copper interconnect research, integrating the vast amounts of available knowledge and making clear the connection between mechanistic principles and relevant technologies. In-depth, cutting-edge discussions include: * The effects of copper in semiconductor materials, especially silicon * The fundamental chemistry and electro-chemistry of copper * The effects of copper on insulating materials such as glass and polymers * Intermetallic and interfacial reactions of copper in layered structures * Current and projected applications of copper in integrated circuits Copper-Fundamental Mechanisms for Microelectronic Applications also features extensive references, tables, and over 100 illustrations-including dual Damascene patterning necessary for copper interconnects. It is an excellent resource for anyone seeking to explore the current literature and gain insight into opportunities opening in the field.

Author : Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba
Publisher : Springer Science & Business Media
Page : 552 pages
File Size : 53,8 Mb
Release : 2009-09-19
Category : Science
ISBN : 9780387958682

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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba Pdf

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Author : Yuzhuo Li
Publisher : John Wiley & Sons
Page : 764 pages
File Size : 49,6 Mb
Release : 2007-10-19
Category : Technology & Engineering
ISBN : 9780471719199

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Microelectronic Applications of Chemical Mechanical Planarization by Yuzhuo Li Pdf

An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.

Author : Tapan Gupta
Publisher : Springer Science & Business Media
Page : 423 pages
File Size : 51,8 Mb
Release : 2010-01-22
Category : Technology & Engineering
ISBN : 9781441900760

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Copper Interconnect Technology by Tapan Gupta Pdf

Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Author : Ming He,Toh-Ming Lu
Publisher : Springer Science & Business Media
Page : 149 pages
File Size : 49,8 Mb
Release : 2012-02-02
Category : Technology & Engineering
ISBN : 1461418127

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Metal-Dielectric Interfaces in Gigascale Electronics by Ming He,Toh-Ming Lu Pdf

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Author : Hansjörg Lipowsky,Emin Arpaci
Publisher : John Wiley & Sons
Page : 192 pages
File Size : 46,9 Mb
Release : 2008-01-08
Category : Technology & Engineering
ISBN : 9783527611645

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Copper in the Automotive Industry by Hansjörg Lipowsky,Emin Arpaci Pdf

A comprehensive and substantial source of information on the properties, production, processing and applications of copper and copper alloys, of interest to metallurgical, development, design and testing engineers in the automotive and other industries using copper. The authority behind this book - the German Copper Institute - was founded in 1927 and is the technical-scientific advisory center for all questions concerning applications and the processing of copper and copper alloys in Germany. For more than 75 years, the technical scientific advisory and information service of the institute has been providing expert help free of charge. It is supported by the copper industry, the European Copper Institute (ECI) and The International Copper Association. It is competent and active in matters concerning the use of copper not only in automotive but also in all kind of industrial applications, in building construction, in electrical engineering and in questions concerning copper's importance for health.

Author : Cor L. Claeys
Publisher : The Electrochemical Society
Page : 428 pages
File Size : 55,6 Mb
Release : 2002
Category : Science
ISBN : 156677344X

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High Purity Silicon VII by Cor L. Claeys Pdf

Author : Yuri N. Shunin,Arnold E. Kiv
Publisher : Springer
Page : 363 pages
File Size : 54,9 Mb
Release : 2012-06-05
Category : Science
ISBN : 9789400741195

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Nanodevices and Nanomaterials for Ecological Security by Yuri N. Shunin,Arnold E. Kiv Pdf

This book is devoted to a wide range of problems concerning applications of nanomaterials and nanodevices as effective solutions to modern ecological problems. Leading experts in nanoscience and nanotechnology present the key theoretical, experimental and implementation issues related to the creation and utilization of novel nanoscale devices to help ensure ecological security. The authors discuss appropriate nanotechnologies for minimizing various types of risk: to human life, technogenic risk, or indeed terrorist threats. Particular emphasis is placed on defining and studying the required materials properties, and – in the field – on nanoscale devices for sensors and monitoring.

Author : Shyam P Muraka,Moshe Eizenberg,Ashok K Sinha
Publisher : Elsevier
Page : 464 pages
File Size : 54,5 Mb
Release : 2003-10-13
Category : Science
ISBN : 0080521959

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Interlayer Dielectrics for Semiconductor Technologies by Shyam P Muraka,Moshe Eizenberg,Ashok K Sinha Pdf

Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.

Author : G. S. Mathad
Publisher : The Electrochemical Society
Page : 438 pages
File Size : 44,9 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 1566773938

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Thin Film Materials, Processes, and Reliability by G. S. Mathad Pdf

Author : Devendra Gupta
Publisher : Springer Science & Business Media
Page : 544 pages
File Size : 50,5 Mb
Release : 2010-06-01
Category : Technology & Engineering
ISBN : 9783540274704

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Diffusion Processes in Advanced Technological Materials by Devendra Gupta Pdf

My 12-year-old granddaughter Nina Alesi once asked me, "Grandpa, you are a scientist at IBM, so what do you do?" I tried to reply, "Oh, I watch atoms move. . . " But before I could finish this sentence, my 7-year-old grandson Vinnie interjected, "Grandpa, do atoms play soccer?" This book is about the games atoms play in diffusion and various other properties of materials. While diffusion has been studied for more than 100 years in solids, its importance, excitement, and intellectual chal lenges remain undiminished with time. It is central to understanding the relationship between the structure and properties of naturally occurring and synthetic materials, which is at the root of current technological development and innovations. The diversity of material has led to spec tacular progress in functional inorganics, polymers, granular materials, photonics, complex oxides, metallic glasses, quasi-crystals, and strongly correlated electronic materials. The integrity of complex materials pack ages is determined by diffusion, a highly interactive and synergic phe nomenon that interrelates to the microstructure, the microchemistry, and the superimposed physical fields. While the various physico-chemical properties of the materials are affected by diffusion, they determine diffu sion itself. This book, which is intended to document the diffusive processes operative in advanced technological materials, has been written by pio neers in industry and academia.

Author : Cor L. Claeys,Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 636 pages
File Size : 43,8 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 1566773083

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ULSI Process Integration II by Cor L. Claeys,Electrochemical Society. Meeting Pdf

Author : Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky
Publisher : Springer
Page : 105 pages
File Size : 50,8 Mb
Release : 2016-09-16
Category : Technology & Engineering
ISBN : 9783319432205

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Dielectric Breakdown in Gigascale Electronics by Juan Pablo Borja,Toh-Ming Lu,Joel Plawsky Pdf

This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

Author : Cor L. Claeys
Publisher : The Electrochemical Society
Page : 454 pages
File Size : 52,9 Mb
Release : 2004
Category : Technology & Engineering
ISBN : 1566774187

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High Purity Silicon VIII by Cor L. Claeys Pdf

"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the Electrochemical Society, October 3-8, 2004"--Pref.

Author : Aloke Paul,Sergiy Divinski
Publisher : Elsevier
Page : 476 pages
File Size : 41,8 Mb
Release : 2017-04-13
Category : Science
ISBN : 9780128045787

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Handbook of Solid State Diffusion: Volume 2 by Aloke Paul,Sergiy Divinski Pdf

Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the second of this two volume set. Volume 2 covers practical issues on diffusion phenomena in bulk, thin film, and in nanomaterials. Diffusion related problems and analysis of methods in industrial applications, such as electronic industry, high temperature materials, nuclear materials, and superconductor materials are discussed. Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion Covers bulk, thin film, and nanomaterials Introduces the problems and analysis in important materials systems in various applications Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe