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Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 312 pages
File Size : 45,5 Mb
Release : 2008-03-18
Category : Technology & Engineering
ISBN : 9783038131526
Defect and Diffusion Forum Vol. 272
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 500 pages
File Size : 40,5 Mb
Release : 2001-11-30
Category : Technology & Engineering
ISBN : 9783035707090
This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 173 pages
File Size : 44,9 Mb
Release : 2012-12-04
Category : Technology & Engineering
ISBN : 9783038139867
This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 404 pages
File Size : 40,7 Mb
Release : 2010-07-13
Category : Technology & Engineering
ISBN : 9783038133827
This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes in line with the policy of including original papers on all of the major material groups: Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films (A.Sharma and P.B.Barman), Structure and Optical Properties of Magnetron-Sputtered SiOx Layers with Silicon Nanoparticles (L.Khomenkova, N.Korsunska, T.Stara, Y.Goldstein, J.Jedrzejewski, E.Savir, C.Sada and Y.Emirov), Non-Gaussian Diffusion of Phosphorus and Arsenic in Silicon with Local Density Diffusivity Model (F.Wirbeleit), Artificial Aging Behavior of 6063 Alloy Studied using Vickers Hardness and Positron Annihilation Lifetime Techniques (M.A.Abdel-Rahman, A.El-deen A.El-Nahhas, Y.A.Lotfy and E.A.Badawi), Analysis of the Solid Solution Microstructure of (HF) Al-Zn Alloys (H.Bedboudi, A.Bourbia, M.Draissiaa, S.Boulkhessaim and M.Y.Debili), Liquid-Phase Sintering of Tungsten Heavy Alloys (S.F.Moustafa, S.H.Kaitbay and G.M.Abdo), Analysis of Stress Intensity Factor and Crack Propagation for Alloy X-750 Pressure Vessel with a Blunting Crack (E.Mahdavi, M.M.Mashhadi and M.Amidpour), Effect of Microstructure upon the Wear Properties of 2.25Cr-1Mo Steel (B.B.Jha, B.K.Mishra, T.K.Sahoo, P.S.Mukherjee and S.N.Ojha), Phase and Structure Formation of Metallic Materials Electrodeposited via a Liquid State Stage: New Experimental Proof (O.Girin), Testing Natural Aging Effect on Properties of 6066 & 6063 Alloys using Vickers Hardness and Positron Annihilation Lifetime Techniques (M.A.Abdel-Rahman, A.A.Ahmed and E.A.Badawi), Investigations of the Gyromagnetic Factors for the Ni3+ Center in MgO (X.M.Li), Variable Range Hopping (VRH) Model in Manganese Oxides (H.Abdullah), Theoretical Studies of the EPR Parameters for Rh+ in NaCl (Z.H.Zhang, S.Y.Wu, P.Xu and L.L.Li), The Effect of Droplet Diameter on the Separation of Heavy-Oil from Water using a Hydrocyclone (F.P.M.Farias, C.J.O.Buriti, W.C.P.B.Lima, S.R.F. Neto and A.G.B.Lima) and Spreading Exponents: Dynamics of Trisiloxane Wetting of Hydrophobic Surfaces (J.Radulovic, K.Sefiane and M.E.R.Shanahan).
Author : Edmund G. Seebauer,Meredith C. Kratzer
Publisher : Springer Science & Business Media
Page : 304 pages
File Size : 45,7 Mb
Release : 2008-11-14
Category : Science
ISBN : 9781848820593
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 352 pages
File Size : 42,9 Mb
Release : 2005-10-01
Category : Technology & Engineering
ISBN : 9783038130338
This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 336 pages
File Size : 55,8 Mb
Release : 2007-01-15
Category : Technology & Engineering
ISBN : 9783038131458
This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 199 pages
File Size : 54,5 Mb
Release : 2011-07-04
Category : Technology & Engineering
ISBN : 9783038135203
This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles (M.Ragam, N.Sankar, K.Ramachandran), The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl (L.Chen, Z.Qiu), Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow (D.P.Adhikary, A.H.Wilkins), Theoretical Investigations of the Defect Structure for Ni3+ in ZnO (Z.H.Zhang, S.Y.Wu, S.X.Zhang).
Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 392 pages
File Size : 46,9 Mb
Release : 2012-02-23
Category : Science
ISBN : 9781439831526
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 543 pages
File Size : 48,5 Mb
Release : 2018-02-19
Category : Science
ISBN : 9781351977975
Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 184 pages
File Size : 55,8 Mb
Release : 2009-01-08
Category : Technology & Engineering
ISBN : 9783038132080
This eleventh volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective X (Volume 272). As well as the 295 metals abstracts, the issue includes in line with the new editorial policy of including original papers on all of the major material groups: Structural and Electron-Hopping Studies of Pr- and Nd-Substituted La2/3Ba1/3MnO3 Manganites (H.Abdullah and S.A.Halim), Recrystallization Annealing of Cold-Rolled 9Cr-1Mo Ferritic Steel Containing Silicon (M.N.Mungole, M.Surender, R.Balasubramaniam and S.Bhargava), Quantitative Concept for Morphological Stability Analysis of Solid/Liquid Interface in Rapid Solidification of Dilute Binary Alloys (M.Draissia), Studies of the Spin Hamiltonian Parameters for NiX2 and CdX2:Ni2+ (X = Cl, Br) (Z.H.Zhang, S.Y.Wu, X.F.Wang and Y.X.Hu).
Author : Anonim
Publisher : Unknown
Page : 348 pages
File Size : 47,5 Mb
Release : 2007
Category : Semiconductors
ISBN : UOM:39015047305928
Author : W. Jantsch,R.A. Stradling
Publisher : CRC Press
Page : 167 pages
File Size : 52,7 Mb
Release : 2020-11-26
Category : Science
ISBN : 9781000157048
Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Author : Boris Iosifovich Boltaks
Publisher : Unknown
Page : 402 pages
File Size : 41,8 Mb
Release : 1963
Category : Diffusion
ISBN : STANFORD:36105030021476
Author : Anonim
Publisher : Unknown
Page : 168 pages
File Size : 50,6 Mb
Release : 2011
Category : Electronic
ISBN : OCLC:927293039