Defects And Diffusion In Semiconductors Xiv

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 173 pages
File Size : 55,9 Mb
Release : 2012-12-04
Category : Technology & Engineering
ISBN : 9783038139867

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Defects and Diffusion in Semiconductors XIV by David J. Fisher Pdf

This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing – Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.

Author : D. J. Fisher
Publisher : Unknown
Page : 243 pages
File Size : 51,7 Mb
Release : 2012
Category : Semiconductors
ISBN : OCLC:826657585

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Defects and Diffusion in Semiconductors by D. J. Fisher Pdf

Author : Edmund G. Seebauer,Meredith C. Kratzer
Publisher : Springer Science & Business Media
Page : 304 pages
File Size : 54,5 Mb
Release : 2008-11-14
Category : Science
ISBN : 9781848820593

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Charged Semiconductor Defects by Edmund G. Seebauer,Meredith C. Kratzer Pdf

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Author : W. Jantsch,Friedrich Schäffler
Publisher : Trans Tech Publications Ltd
Page : 516 pages
File Size : 48,6 Mb
Release : 2011-08-16
Category : Technology & Engineering
ISBN : 9783038135159

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Gettering and Defect Engineering in Semiconductor Technology XIV by W. Jantsch,Friedrich Schäffler Pdf

Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 500 pages
File Size : 53,9 Mb
Release : 2001-11-30
Category : Technology & Engineering
ISBN : 9783035707090

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Defects and Diffusion in Semiconductors IV by David J. Fisher Pdf

This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 199 pages
File Size : 45,5 Mb
Release : 2011-07-04
Category : Technology & Engineering
ISBN : 9783038135203

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Defects and Diffusion in Semiconductors XIII by David J. Fisher Pdf

This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 336 pages
File Size : 49,7 Mb
Release : 2007-01-15
Category : Technology & Engineering
ISBN : 9783038131458

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Defects and Diffusion in Semiconductors - An Annual Retrospective IX by David J. Fisher Pdf

This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).

Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 554 pages
File Size : 49,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979

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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by Peter Pichler Pdf

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 352 pages
File Size : 49,6 Mb
Release : 2005-10-01
Category : Technology & Engineering
ISBN : 9783038130338

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Defects and Diffusion in Semiconductors - an Annual Retrospective VIII by David J. Fisher Pdf

This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
Page : 312 pages
File Size : 45,7 Mb
Release : 2008-03-18
Category : Technology & Engineering
ISBN : 9783038131526

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Defects and Diffusion in Semiconductors X by David J. Fisher Pdf

Defect and Diffusion Forum Vol. 272

Author : H.J. von Bardeleben
Publisher : Trans Tech Publications Ltd
Page : 1320 pages
File Size : 44,9 Mb
Release : 1986-01-01
Category : Technology & Engineering
ISBN : 9783035704242

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Defects in Semiconductors 14 by H.J. von Bardeleben Pdf

Materials Science Forum Vols. 10-12

Author : Anonim
Publisher : Unknown
Page : 348 pages
File Size : 52,7 Mb
Release : 2007
Category : Semiconductors
ISBN : UOM:39015047305928

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Defects and Diffusion in Semiconductors by Anonim Pdf

Author : Anonim
Publisher : Unknown
Page : 168 pages
File Size : 43,7 Mb
Release : 2011
Category : Electronic
ISBN : OCLC:927293039

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Diffusion in Semiconductors, Other Than Silicon: Compilation by Anonim Pdf

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 543 pages
File Size : 41,5 Mb
Release : 2018-02-19
Category : Science
ISBN : 9781351977975

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Dopants and Defects in Semiconductors, Second Edition by Matthew D. McCluskey,Eugene E. Haller Pdf

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 392 pages
File Size : 46,8 Mb
Release : 2012-02-23
Category : Science
ISBN : 9781439831526

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Dopants and Defects in Semiconductors by Matthew D. McCluskey,Eugene E. Haller Pdf

Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.