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Author : J. H. Albany
Publisher : CRC Press
Page : 604 pages
File Size : 54,5 Mb
Release : 1979
Category : Art
ISBN : UCAL:B4428167
Author : Victor I. Fistul
Publisher : CRC Press
Page : 448 pages
File Size : 55,9 Mb
Release : 2004-01-27
Category : Science
ISBN : 9780203299258
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Author : Sokrates T. Pantelides
Publisher : CRC Press
Page : 952 pages
File Size : 49,9 Mb
Release : 1992-11-30
Category : Science
ISBN : 2881245625
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Author : Kazumi Wada
Publisher : CRC Press
Page : 426 pages
File Size : 53,8 Mb
Release : 2022-09-16
Category : Science
ISBN : 9781000715996
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Author : R.A. Johnson,A.N. Orlov
Publisher : Elsevier
Page : 736 pages
File Size : 44,7 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780444598226
``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor materials, and radiation damage of semiconductors and superconductors.
Author : Anonim
Publisher : Unknown
Page : 46 pages
File Size : 41,8 Mb
Release : 1967
Category : Electronic
ISBN : UOM:39015087108323
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 40,7 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781461326953
viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : C. Claeys,Eddy Simoen
Publisher : Springer Science & Business Media
Page : 440 pages
File Size : 41,6 Mb
Release : 2002-08-21
Category : Business & Economics
ISBN : 3540433937
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author : Bernard Pajot,Bernard Clerjaud
Publisher : Springer Science & Business Media
Page : 532 pages
File Size : 51,6 Mb
Release : 2012-08-28
Category : Science
ISBN : 9783642180187
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Author : D. B. Holt,B. G. Yacobi
Publisher : Cambridge University Press
Page : 625 pages
File Size : 44,8 Mb
Release : 2007-04-12
Category : Science
ISBN : 9781139463591
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 554 pages
File Size : 44,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Frank Larin
Publisher : Unknown
Page : 312 pages
File Size : 40,7 Mb
Release : 1968
Category : Semiconductors
ISBN : UOM:39015003413260
Author : Stephen J. Pearton,James W. Corbett,Michael Stavola
Publisher : Springer Science & Business Media
Page : 374 pages
File Size : 44,7 Mb
Release : 2013-03-08
Category : Science
ISBN : 9783642847783
vgl. Hardcoverausgabe.
Author : R. D. Westbrook
Publisher : ASTM International
Page : 262 pages
File Size : 53,9 Mb
Release : 1980
Category : Science
ISBN : 0803103905
Author : Ryukiti R. Hasiguti
Publisher : Institute of Physics Publishing (GB)
Page : 596 pages
File Size : 51,9 Mb
Release : 1981
Category : Technology & Engineering
ISBN : UVA:X001324693
