Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors

Author : Evelyn Tina Breyer
Publisher : BoD – Books on Demand
Page : 216 pages
File Size : 41,7 Mb
Release : 2022-02-08
Category : Technology & Engineering
ISBN : 9783755708520

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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by Evelyn Tina Breyer Pdf

Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Author : Claude A. Wiatrowski,Charles H. House
Publisher : Unknown
Page : 413 pages
File Size : 54,8 Mb
Release : 1981
Category : Electronic digital computers
ISBN : 0070666326

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Logic Circuits and Microcomputer Systems by Claude A. Wiatrowski,Charles H. House Pdf

Author : Saeroonter Oh
Publisher : Unknown
Page : 128 pages
File Size : 40,7 Mb
Release : 2010
Category : Electronic
ISBN : OCLC:664674111

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Modeling of III-V Nanoscale Field-effect Transistors for Logic Circuits by Saeroonter Oh Pdf

As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.

Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
Publisher : Springer Nature
Page : 421 pages
File Size : 54,9 Mb
Release : 2020-03-23
Category : Technology & Engineering
ISBN : 9789811512124

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Ferroelectric-Gate Field Effect Transistor Memories by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon Pdf

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Author : Shimeng Yu
Publisher : Springer Nature
Page : 71 pages
File Size : 55,8 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020308

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Resistive Random Access Memory (RRAM) by Shimeng Yu Pdf

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

Author : Yoshio Nishi
Publisher : Elsevier
Page : 456 pages
File Size : 48,5 Mb
Release : 2014-06-24
Category : Computers
ISBN : 9780857098092

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Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi Pdf

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Page : 570 pages
File Size : 46,8 Mb
Release : 2019-03-27
Category : Technology & Engineering
ISBN : 9780081024317

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Ferroelectricity in Doped Hafnium Oxide by Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo Pdf

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
Page : 531 pages
File Size : 43,7 Mb
Release : 2010-06-22
Category : Technology & Engineering
ISBN : 9789048186143

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Compact Modeling by Gennady Gildenblat Pdf

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Author : Mark Lundstrom,Jing Guo
Publisher : Springer Science & Business Media
Page : 223 pages
File Size : 46,7 Mb
Release : 2006-06-18
Category : Technology & Engineering
ISBN : 9780387280035

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Nanoscale Transistors by Mark Lundstrom,Jing Guo Pdf

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
Page : 266 pages
File Size : 52,9 Mb
Release : 2013-10-18
Category : Science
ISBN : 9781461480549

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Atomic Layer Deposition for Semiconductors by Cheol Seong Hwang Pdf

Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Page : 784 pages
File Size : 49,6 Mb
Release : 2015-12-23
Category : Technology & Engineering
ISBN : 9783527680931

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Resistive Switching by Daniele Ielmini,Rainer Waser Pdf

With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Author : Seungbum Hong,Orlando Auciello,Dirk Wouters
Publisher : Springer
Page : 280 pages
File Size : 47,7 Mb
Release : 2014-11-18
Category : Technology & Engineering
ISBN : 9781489975379

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Emerging Non-Volatile Memories by Seungbum Hong,Orlando Auciello,Dirk Wouters Pdf

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Author : Mickaël Lallart
Publisher : BoD – Books on Demand
Page : 266 pages
File Size : 49,7 Mb
Release : 2011-08-23
Category : Science
ISBN : 9789533074566

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Ferroelectrics by Mickaël Lallart Pdf

Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.

Author : Saraju P. Mohanty,Ashok Srivastava
Publisher : IET
Page : 383 pages
File Size : 43,6 Mb
Release : 2016-04-12
Category : Technology & Engineering
ISBN : 9781849199971

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Nano-CMOS and Post-CMOS Electronics by Saraju P. Mohanty,Ashok Srivastava Pdf

Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.

Author : Asim K. Ray
Publisher : John Wiley & Sons
Page : 628 pages
File Size : 48,8 Mb
Release : 2021-04-12
Category : Technology & Engineering
ISBN : 9781119529477

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Oxide Electronics by Asim K. Ray Pdf

Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.