Extended Monolithic Integration Levels For Highly Functional Gan Power Ics

Author : Michael Basler
Publisher : Unknown
Page : 0 pages
File Size : 46,5 Mb
Release : 2022
Category : Electronic
ISBN : OCLC:1371955674

Get Book

Extended Monolithic Integration Levels for Highly Functional GaN Power ICs by Michael Basler Pdf

Abstract: A new generation of power electronic systems with reduced size, losses and costs is emerging due to the rapid development of gallium nitride (GaN) transistors. These transistors are fabricated in the GaN-on-Si technology and have a lateral structure, which enables the monolithic integration with peripheral functions such as driver, sensing, protection, and control. In this manner, the first GaN power integrated circuits (ICs) with gate driver have successfully entered the market. This work extends the monolithic integration in the GaN technology by introducing and investigating building and function blocks for power ICs. A GaN power IC platform with devices and building blocks is investigated regarding its characteristics and its related design issues are analyzed. This leads to new design approaches and methods, which are presented in this thesis. Integration levels are introduced for the classification of GaN power ICs. Emphasis is placed on a schematic and layout design framework which provides circuit designers an effective way to implement custom power ICs. Two types of transistors and diodes as well as design approaches for layout structures with high current carrying capabilities are analyzed. Besides the investigation of active devices, also new approaches for integrated passives are introduced, such as dog bone layouts for high impedance resistors, p-GaN gate and stacked MIM capacitors as well as spiral inductors with high current carrying capabilities. Another focus is on the building blocks with digital and analog basic circuits. Area-efficient designs for logic gates with reduced static losses are presented. In addition, there are investigations into multi-stage comparators based on differential amplifiers and temperature-compensated voltage references. Based on this GaN power IC platform, two case studies are presented for a DC-DC synchronous buck converter and AC-DC active rectifier diode. The case studies on the one hand highlight the capability to implement complex functions and even systems consisting of devices and function blocks with their design approaches on a single chip and to use them advantageously for power electronics applications. Experimental measurements on implemented hardware prototypes, on the other hand, verify the advantages of highly-integrated GaN power ICs. The key findings of this work on GaN power integration are given. Beyond this comparisons of GaN and Si IC technologies as well as GaN power ICs are elaborated and perspectives, challenges and social benefits are discussed. This work contributes significantly to the progress and development of highly-integrated high-performance GaN ICs for power electronics

Author : Achim Seidel,Bernhard Wicht
Publisher : Springer Nature
Page : 137 pages
File Size : 51,7 Mb
Release : 2021-03-31
Category : Technology & Engineering
ISBN : 9783030689407

Get Book

Highly Integrated Gate Drivers for Si and GaN Power Transistors by Achim Seidel,Bernhard Wicht Pdf

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​

Author : Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser
Publisher : John Wiley & Sons
Page : 384 pages
File Size : 50,9 Mb
Release : 2019-08-23
Category : Science
ISBN : 9781119594376

Get Book

GaN Transistors for Efficient Power Conversion by Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser Pdf

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 50,7 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994

Get Book

Power GaN Devices by Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni Pdf

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Author : Xinbo Ruan,Wu Chen,Tianzhi Fang,Kai Zhuang,Tao Zhang,Hong Yan
Publisher : Springer
Page : 213 pages
File Size : 51,7 Mb
Release : 2018-12-11
Category : Technology & Engineering
ISBN : 9789811327605

Get Book

Control of Series-Parallel Conversion Systems by Xinbo Ruan,Wu Chen,Tianzhi Fang,Kai Zhuang,Tao Zhang,Hong Yan Pdf

Series-parallel conversion systems, in which multiple standardized converter modules are connected in series or parallel at the input and output sides, to meet the demands of various applications. This book focuses on the control strategies for the series-parallel conversion systems with DC-DC converters and DC-AC inverters as the basic modules, respectively, to achieve input voltage/current sharing and output voltage/current sharing among the constituent modules. The detailed theoretical analysis with design examples and experimental validations are presented. This book is essential and valuable reference for graduate students and academics majoring in power electronics and engineers engaged in developing DC-DC converters, DC-AC inverters and power electronics transformers.

Author : Anonim
Publisher : Unknown
Page : 1608 pages
File Size : 50,5 Mb
Release : 1988
Category : Electrical engineering
ISBN : MINN:31951D00128625S

Get Book

Electrical & Electronics Abstracts by Anonim Pdf

Author : Yong Liu
Publisher : Springer Science & Business Media
Page : 606 pages
File Size : 51,7 Mb
Release : 2012-02-15
Category : Technology & Engineering
ISBN : 9781461410539

Get Book

Power Electronic Packaging by Yong Liu Pdf

Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 43,6 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075

Get Book

Wide Bandgap Semiconductor Power Devices by B. Jayant Baliga Pdf

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Author : Anonim
Publisher : Unknown
Page : 942 pages
File Size : 54,7 Mb
Release : 2002
Category : Microwaves
ISBN : UCSD:31822020362638

Get Book

Microwave Journal by Anonim Pdf

Author : Anonim
Publisher : Unknown
Page : 846 pages
File Size : 48,7 Mb
Release : 2004
Category : Semiconductor industry
ISBN : UCSD:31822033894783

Get Book

Semiconductor International by Anonim Pdf

Author : Farid Medjdoub
Publisher : MDPI
Page : 242 pages
File Size : 55,6 Mb
Release : 2021-05-26
Category : Technology & Engineering
ISBN : 9783036505664

Get Book

Wide Bandgap Based Devices by Farid Medjdoub Pdf

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Author : Helmuth Spieler
Publisher : OUP Oxford
Page : 513 pages
File Size : 50,6 Mb
Release : 2005-08-25
Category : Technology & Engineering
ISBN : 9780191523656

Get Book

Semiconductor Detector Systems by Helmuth Spieler Pdf

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Author : Jens Lienig,Juergen Scheible
Publisher : Springer Nature
Page : 319 pages
File Size : 44,9 Mb
Release : 2020-03-19
Category : Technology & Engineering
ISBN : 9783030392840

Get Book

Fundamentals of Layout Design for Electronic Circuits by Jens Lienig,Juergen Scheible Pdf

This book covers the fundamental knowledge of layout design from the ground up, addressing both physical design, as generally applied to digital circuits, and analog layout. Such knowledge provides the critical awareness and insights a layout designer must possess to convert a structural description produced during circuit design into the physical layout used for IC/PCB fabrication. The book introduces the technological know-how to transform silicon into functional devices, to understand the technology for which a layout is targeted (Chap. 2). Using this core technology knowledge as the foundation, subsequent chapters delve deeper into specific constraints and aspects of physical design, such as interfaces, design rules and libraries (Chap. 3), design flows and models (Chap. 4), design steps (Chap. 5), analog design specifics (Chap. 6), and finally reliability measures (Chap. 7). Besides serving as a textbook for engineering students, this book is a foundational reference for today’s circuit designers. For Slides and Other Information: https://www.ifte.de/books/pd/index.html

Author : George D. Vendelin,Anthony M. Pavio,Ulrich L. Rohde
Publisher : John Wiley & Sons
Page : 1080 pages
File Size : 42,9 Mb
Release : 2005-10-03
Category : Technology & Engineering
ISBN : 9780471715825

Get Book

Microwave Circuit Design Using Linear and Nonlinear Techniques by George D. Vendelin,Anthony M. Pavio,Ulrich L. Rohde Pdf

The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Author : Hongyu Yu,Tianli Duan
Publisher : CRC Press
Page : 292 pages
File Size : 49,5 Mb
Release : 2017-07-06
Category : Science
ISBN : 9781351767606

Get Book

Gallium Nitride Power Devices by Hongyu Yu,Tianli Duan Pdf

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.