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Author : B. de Cremoux
Publisher : Institute of Physics Publishing (GB)
Page : 736 pages
File Size : 52,6 Mb
Release : 1985
Category : Epitaxy
ISBN : UVA:X004031291
Author : Gerald B. Stringfellow
Publisher : CRC Press
Page : 696 pages
File Size : 40,5 Mb
Release : 2020-11-26
Category : Science
ISBN : 9781000157062
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author : Ikegami
Publisher : CRC Press
Page : 1002 pages
File Size : 42,8 Mb
Release : 1993-01-01
Category : Technology & Engineering
ISBN : 075030250X
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author : Günter Weimann,Hans S. Rupprecht,G. Weimann
Publisher : CRC Press
Page : 880 pages
File Size : 43,9 Mb
Release : 1994-01-01
Category : Technology & Engineering
ISBN : 075030295X
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author : Anonim
Publisher : Unknown
Page : 876 pages
File Size : 55,9 Mb
Release : 1993
Category : Gallium arsenide
ISBN : UCAL:B4236575
Author : Anonim
Publisher : Unknown
Page : 0 pages
File Size : 42,6 Mb
Release : 1971
Category : Electronic
ISBN : OCLC:1415083011
Author : Sadao Adachi
Publisher : IET
Page : 354 pages
File Size : 43,5 Mb
Release : 1993
Category : Aluminium alloys
ISBN : 0852965583
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author : T Ikoma,H Watanabe
Publisher : CRC Press
Page : 0 pages
File Size : 51,9 Mb
Release : 1990-01-01
Category : Science
ISBN : 0854980652
These proceedings focus on the materials, devices and applications based on III-V compound and alloy semiconductors; GaAs, InP and other compounds, ternary and quarternary alloys. They report on the discussions that took place between researchers and engineers allowing a unique opportunity for them to discuss subjects from different aspects of the disciplines. For researchers in III-V materials and related compounds.
Author : Masatomo Fujimoto
Publisher : CRC Press
Page : 792 pages
File Size : 52,7 Mb
Release : 1986
Category : Gallium arsenide
ISBN : UCAL:B4534584
Author : R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott
Publisher : Springer Science & Business Media
Page : 548 pages
File Size : 52,6 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9781468491456
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Author : Pier Giovanni Pelfer,Jens Ludwig,K Runge,H S Rupprecht
Publisher : World Scientific
Page : 258 pages
File Size : 40,7 Mb
Release : 1996-02-09
Category : Electronic
ISBN : 9789814548748
The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Author : Manijeh Razeghi
Publisher : CRC Press
Page : 796 pages
File Size : 51,8 Mb
Release : 2010-08-17
Category : Science
ISBN : 9781439807002
Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecomm
Author : Alice Cline Parker,Leda Lunardi
Publisher : Springer Nature
Page : 270 pages
File Size : 41,9 Mb
Release : 2020-07-16
Category : Technology & Engineering
ISBN : 9783030463779
This book contains stories of women engineers’ paths through the golden age of microelectronics, stemming from the invention of the transistor in 1947. These stories, like the biographies of Marie Curie and the National Geographic’s stories of Jane Goodall’s research that inspired the authors will inspire and guide readers along unconventional pathways to contributions to microelectronics that we can only begin to imagine. The book explores why and how the women writing here chose their career paths and how they navigated their careers. This topic is of interest to a vast audience, from students to professionals to university advisers to industry CEOs, who can imagine the advantages of a future with a diverse work force. Provides insight into women’s early contributions to the field of microelectronics and celebrates the challenges they overcame; Presents compelling innovations from academia, research, and industry into advances, applications, and the future of microelectronics; Includes a fascinating look into topics such as nanotechnologies, video games, analog electronics, design automation, and neuromorphic circuits.
Author : Anonim
Publisher : Unknown
Page : 0 pages
File Size : 41,6 Mb
Release : 1979*
Category : Electronic
ISBN : OCLC:1414828813
Author : Anonim
Publisher : Unknown
Page : 878 pages
File Size : 53,7 Mb
Release : 1993
Category : Gallium arsenide
ISBN : UOM:39015039969772