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Author : L. K. Fionova,A. V. Artemyev
Publisher : Unknown
Page : 310 pages
File Size : 43,7 Mb
Release : 1993
Category : Dislocation in metals
ISBN : STANFORD:36105016756665
Author : Leszek Hozer
Publisher : Prentice Hall
Page : 220 pages
File Size : 50,9 Mb
Release : 1994
Category : Science
ISBN : UOM:39015032576079
Author : Valerie Randle
Publisher : CRC Press
Page : 182 pages
File Size : 40,7 Mb
Release : 2017-07-12
Category : Science
ISBN : 9781351409889
As the selection of material for particular engineering properties becomes increasingly important in keeping costs down, methods for evaluating material properties also become more relevant. One such method examines the geometry of grain boundaries, which reveals much about the properties of the material. Studying material properties from their geometrical measurements, The Measurement of Grain Boundary Geometry provides a framework for a specialized application of electron microscopy for metals and alloys and, by extension, for ceramics, minerals, and semiconductors. The book presents an overview of the developments in the theory of grain boundary geometry and its practical applications in material engineering. It also covers the tunneling electron microscope (TEM), experimental aspects of data collection, data processing, and examples from actual investigations. Each step of the analysis process is clearly described, from data collection through processing, analysis, representation, and display to applications. The book also includes a glossary of terms. Exploring both the experimental and analytical aspects of the subject, this practical reference guide is essential for researchers and students involved in material properties, whether in physics, materials science, metallurgy, or physical chemistry.
Author : Grégory Guisbiers,Dibyendu Ganguli
Publisher : Trans Tech Publications Ltd
Page : 266 pages
File Size : 42,8 Mb
Release : 2010-07-26
Category : Technology & Engineering
ISBN : 9783038133490
Volume is indexed by Thomson Reuters BCI (WoS). The fields of nanoscience and nanotechnology are now growing very rapidly. The properties of nanostructures are different to those of the bulk material, due to the high surface area to volume ratio and possible appearance of quantum effects at the nanoscale. The study of size and shape effects upon material properties has therefore attracted enormous attention.
Author : Donald McLean
Publisher : Unknown
Page : 384 pages
File Size : 42,8 Mb
Release : 1957
Category : Technology & Engineering
ISBN : UOM:39015004503143
Author : Hans J. Möller,Horst P. Strunk,Jürgen H. Werner
Publisher : Springer Science & Business Media
Page : 399 pages
File Size : 52,8 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642934131
This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
Author : Sibylle Gemming,Michael Schreiber,Jens-Boie Suck
Publisher : Springer Science & Business Media
Page : 208 pages
File Size : 45,5 Mb
Release : 2007-03-07
Category : Technology & Engineering
ISBN : 9783540479710
This book contains six chapters on central topics in materials science. Each is written by specialists and gives a state-of-art presentation of the subject for graduate students and scientists not necessarily working in that field. Computer simulations of new materials, theory and experimental work are all extensively discussed. Most of the topics discussed have a bearing on nanomaterials and nanodevices.
Author : Leszek Hozer
Publisher : Unknown
Page : 200 pages
File Size : 52,9 Mb
Release : 1994
Category : Electronic ceramics
ISBN : 8301113065
Author : D. B. Holt,B. G. Yacobi
Publisher : Cambridge University Press
Page : 625 pages
File Size : 43,7 Mb
Release : 2007-04-12
Category : Science
ISBN : 9781139463591
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : Jibamitra Ganguly
Publisher : Springer Science & Business Media
Page : 580 pages
File Size : 46,6 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461390190
One of the fundamental objectives of physical geochemistry is to understand the evolution of geochemical systems from microscopic to regional and global scales. At present there seems to be a general recognition of the fact that internal properties of minerals record important aspects of the evolutionary history of their host rocks which may be unraveled by very fine scale observations. A major focus in the development of geochemical research in the last thirty years has been the application of classical thermodynamics to reconstruct the conditions at which the states of quenched mineralogical properties of rocks have equilibrated during the course of their evolution. While these works have funda mentally influenced our understanding ofthe physico-chemical history ofrocks, in recent years petrologists, mineralogists, and geochemists have been making greater efforts towards the application of kinetic theories in order to develop a better appreciation of the temporal details of geochemical processes. The present volume brings together a variety of current research on transport in systems of geochemical interest from atomic to outcrop scales. A major theme is atomic migration or diffusion, and its various manifestations on microscopic and macroscopic scales. Transport in the solid state is controlled by diffusion and is responsible for the states of atomic ordering and relaxation of composi tional zoning in minerals, development of compositional zoning during cooling, exsolution lamellae, and creep.
Author : Louisette Priester
Publisher : Springer Science & Business Media
Page : 458 pages
File Size : 45,5 Mb
Release : 2012-11-28
Category : Technology & Engineering
ISBN : 9789400749696
Grain boundaries are a main feature of crystalline materials. They play a key role in determining the properties of materials, especially when grain size decreases and even more so with the current improvements of processing tools and methods that allow us to control various elements in a polycrystal. This book presents the theoretical basis of the study of grain boundaries and aims to open up new lines of research in this area. The treatment is light on mathematical approaches while emphasizing practical examples; the issues they raise are discussed with reference to theories. The general approach of the book has two main goals: to lead the reader from the concept of ‘ideal’ to ‘real’ grain boundaries; to depart from established knowledge and address the opportunities emerging through "grain boundary engineering", the control of morphological and crystallographic features that affect material properties. The book is divided in three parts: I ‘From interganular order to disorder’ deals with the concept of the perfect grain boundary, at equilibrium, and questions the maintenance of its crystalline state. II ‘From the ideal to the real grain boundary’ deals with the concept of the faulted grain boundary. It attempts to reveal the influence of the grain boundary structure on its defects, their formation and their accommodation. III ‘From free to constrained grain boundaries’ is devoted to grain boundary ensembles starting from the triple junction (the elemental configuration) to real grain boundary networks in polycrystals This part covers a new and topical development in the field. It presents for the first time an avenue for researchers working on macroscopic aspects, to approach the scale of description of grain boundaries. Audience: graduate students, researchers and engineers in Materials Science and all those scientists pursuing grain boundary engineering in order to improve materials performance.
Author : Artur Balasinski
Publisher : CRC Press
Page : 249 pages
File Size : 42,5 Mb
Release : 2018-09-03
Category : Computers
ISBN : 9781439817155
Because of the continuous evolution of integrated circuit manufacturing (ICM) and design for manufacturability (DfM), most books on the subject are obsolete before they even go to press. That’s why the field requires a reference that takes the focus off of numbers and concentrates more on larger economic concepts than on technical details. Semiconductors: Integrated Circuit Design for Manufacturability covers the gradual evolution of integrated circuit design (ICD) as a basis to propose strategies for improving return-on-investment (ROI) for ICD in manufacturing. Where most books put the spotlight on detailed engineering enhancements and their implications for device functionality, in contrast, this one offers, among other things, crucial, valuable historical background and roadmapping, all illustrated with examples. Presents actual test cases that illustrate product challenges, examine possible solution strategies, and demonstrate how to select and implement the right one This book shows that DfM is a powerful generic engineering concept with potential extending beyond its usual application in automated layout enhancements centered on proximity correction and pattern density. This material explores the concept of ICD for production by breaking down its major steps: product definition, design, layout, and manufacturing. Averting extended discussion of technology, techniques, or specific device dimensions, the author also avoids the clumsy chapter architecture that can hinder other books on this subject. The result is an extremely functional, systematic presentation that simplifies existing approaches to DfM, outlining a clear set of criteria to help readers assess reliability, functionality, and yield. With careful consideration of the economic and technical trade-offs involved in ICD for manufacturing, this reference addresses techniques for physical, electrical, and logical design, keeping coverage fresh and concise for the designers, manufacturers, and researchers defining product architecture and research programs.
Author : Jinliang He
Publisher : John Wiley & Sons
Page : 482 pages
File Size : 43,6 Mb
Release : 2019-08-05
Category : Technology & Engineering
ISBN : 9783527333820
Completely up-to-date, this is the first comprehensive monograph on metal oxide varistors with a focus on microstructure, conduction mechanisms, device failures, ageing, additive impacts and future varistor systems. As such, it covers the fundamentals and applications of metal oxide varistors, including their macro-characteristics, microstructural properties and the device-internal physical and electrical mechanisms. The author reflects on the achievements made in varistor research and propose new approaches to analyze and predict the macro-characteristics, employing such methods as micro-contact measurements and numerical simulations. In addition, he looks at future directions for varistor research, such as ZnO varistors with a high voltage gradient and low residual voltage and further varistor types based on TiO2 and SnO2.
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 49,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Pavel Lejcek
Publisher : Springer Science & Business Media
Page : 249 pages
File Size : 45,9 Mb
Release : 2010-07-20
Category : Technology & Engineering
ISBN : 9783642125058
Grain boundaries are important structural components of polycrystalline materials used in the vast majority of technical applications. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use. One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. The current book deals with fundamentals of grain boundary segregation in metallic materials and its relationship to the grain boundary structure, classification and other materials properties.