Physics And Chemistry Of Iii V Compound Semiconductor Interfaces

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Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 42,9 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351

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Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

III–V Compound Semiconductors and Devices

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 51,5 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

III–V Compound Semiconductors

Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 603 pages
File Size : 53,5 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236

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III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

Semiconductor Technologies

Author : Jan Grym
Publisher : BoD – Books on Demand
Page : 500 pages
File Size : 51,9 Mb
Release : 2010-04-01
Category : Technology & Engineering
ISBN : 9789533070803

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Semiconductor Technologies by Jan Grym Pdf

Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.

Fundamentals of III-V Semiconductor MOSFETs

Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 41,9 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474

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Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky,Peide Ye Pdf

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Proceedings of the 5th Annual Conference on the Physics of Compound Semiconductor Interfaces, 17-20 January 1978, Davidson Conference Center, University of Southern California, University Park, Los Angeles, California

Author : Anonim
Publisher : Unknown
Page : 336 pages
File Size : 50,6 Mb
Release : 1978
Category : Semiconductors
ISBN : UCSD:31822034502336

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Proceedings of the 5th Annual Conference on the Physics of Compound Semiconductor Interfaces, 17-20 January 1978, Davidson Conference Center, University of Southern California, University Park, Los Angeles, California by Anonim Pdf

Surfaces and Interfaces: Physics and Electronics

Author : R.S. Bauer
Publisher : Elsevier
Page : 660 pages
File Size : 41,7 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780444600165

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Surfaces and Interfaces: Physics and Electronics by R.S. Bauer Pdf

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Physical Properties of III-V Semiconductor Compounds

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 48,9 Mb
Release : 1992-11-10
Category : Science
ISBN : 0471573299

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Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Concise Encyclopedia of Semiconducting Materials & Related Technologies

Author : S. Mahajan,L. C. Kimerling
Publisher : Elsevier
Page : 607 pages
File Size : 45,6 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9781483286570

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Concise Encyclopedia of Semiconducting Materials & Related Technologies by S. Mahajan,L. C. Kimerling Pdf

The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.

Handbook of Compound Semiconductors

Author : Paul H. Holloway,Gary E. McGuire
Publisher : Cambridge University Press
Page : 937 pages
File Size : 44,7 Mb
Release : 2008-10-19
Category : Technology & Engineering
ISBN : 9780080946146

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Handbook of Compound Semiconductors by Paul H. Holloway,Gary E. McGuire Pdf

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

High Mobility Materials for CMOS Applications

Author : Nadine Collaert
Publisher : Woodhead Publishing
Page : 384 pages
File Size : 49,5 Mb
Release : 2018-06-29
Category : Technology & Engineering
ISBN : 9780081020623

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High Mobility Materials for CMOS Applications by Nadine Collaert Pdf

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author : C. O'Dwyer
Publisher : The Electrochemical Society
Page : 647 pages
File Size : 42,6 Mb
Release : 2007
Category : Compound semiconductors
ISBN : 9781566775519

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State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2 by C. O'Dwyer Pdf

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

Microelectronics

Author : Jerry C. Whitaker
Publisher : CRC Press
Page : 503 pages
File Size : 51,7 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781351836371

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Microelectronics by Jerry C. Whitaker Pdf

When it comes to electronics, demand grows as technology shrinks. From consumer and industrial markets to military and aerospace applications, the call is for more functionality in smaller and smaller devices. Culled from the second edition of the best-selling Electronics Handbook, Microelectronics, Second Edition presents a summary of the current state of microelectronics and its innovative directions. This book focuses on the materials, devices, and applications of microelectronics technology. It details the IC design process and VLSI circuits, including gate arrays, programmable logic devices and arrays, parasitic capacitance, and transmission line delays. Coverage ranges from thermal properties and semiconductor materials to MOSFETs, digital logic families, memory devices, microprocessors, digital-to-analog and analog-to-digital converters, digital filters, and multichip module technology. Expert contributors discuss applications in machine vision, ad hoc networks, printing technologies, and data and optical storage systems. The book also includes defining terms, references, and suggestions for further reading. This edition features two new sections on fundamental properties and semiconductor devices. With updated material and references in every chapter, Microelectronics, Second Edition is an essential reference for work with microelectronics, electronics, circuits, systems, semiconductors, logic design, and microprocessors.