Hot Electrons In Semiconductors

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Hot electrons in semiconductors

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 51,5 Mb
Release : 1978
Category : Electronic
ISBN : OCLC:252250909

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Hot electrons in semiconductors by Anonim Pdf

Physics of Hot Electron Transport in Semiconductors

Author : Chin Sen Ting
Publisher : World Scientific
Page : 336 pages
File Size : 45,5 Mb
Release : 1992
Category : Science
ISBN : 9810210086

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Physics of Hot Electron Transport in Semiconductors by Chin Sen Ting Pdf

This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Hot-Electron Transport in Semiconductors

Author : L. Reggiani
Publisher : Springer Science & Business Media
Page : 288 pages
File Size : 40,7 Mb
Release : 2006-01-20
Category : Technology & Engineering
ISBN : 9783540388494

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Hot-Electron Transport in Semiconductors by L. Reggiani Pdf

Hot-Electron Transport in Semiconductors (Topics in Applied Physics).

Hot Electrons in Semiconductors

Author : N. Balkan
Publisher : Unknown
Page : 536 pages
File Size : 52,6 Mb
Release : 1998
Category : Science
ISBN : 0198500580

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Hot Electrons in Semiconductors by N. Balkan Pdf

Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Hot Electrons in Semiconductors

Author : Anonim
Publisher : Unknown
Page : 346 pages
File Size : 51,7 Mb
Release : 1978
Category : Hot carriers
ISBN : UCAL:B4197091

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Hot Electrons in Semiconductors by Anonim Pdf

Hot Carriers in Semiconductors

Author : Karl Hess,J.P. Leburton,U. Ravaioli
Publisher : Springer Science & Business Media
Page : 575 pages
File Size : 51,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461304012

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Hot Carriers in Semiconductors by Karl Hess,J.P. Leburton,U. Ravaioli Pdf

This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Hot-Electron Transport in Semiconductors

Author : L. Reggiani
Publisher : Springer
Page : 275 pages
File Size : 54,9 Mb
Release : 2014-03-12
Category : Technology & Engineering
ISBN : 3662309343

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Hot-Electron Transport in Semiconductors by L. Reggiani Pdf

Physics of Nonlinear Transport in Semiconductors

Author : David K. Ferry,John Robert Barker,C. Jacobini
Publisher : Springer Science & Business Media
Page : 620 pages
File Size : 50,8 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781468436389

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Physics of Nonlinear Transport in Semiconductors by David K. Ferry,John Robert Barker,C. Jacobini Pdf

The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

Plasma and Current Instabilities in Semiconductors

Author : Juras Pozhela
Publisher : Elsevier
Page : 318 pages
File Size : 40,8 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483189383

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Plasma and Current Instabilities in Semiconductors by Juras Pozhela Pdf

Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift instabilities. The text also discusses hot electrons, along with the instabilities due to inter-valley electron transfer. The next chapters talks about avalanche and recombination instabilities. The last chapter deals with plasma streams. The book will be of great use to student and professional electronics engineers and technicians.

Hot Electrons in Semiconductors

Author : Anonim
Publisher : Pergamon
Page : 323 pages
File Size : 44,6 Mb
Release : 1978-01-01
Category : Hot carriers
ISBN : 0080226922

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Hot Electrons in Semiconductors by Anonim Pdf

Rational Design of Solar Cells for Efficient Solar Energy Conversion

Author : Alagarsamy Pandikumar,Ramasamy Ramaraj
Publisher : John Wiley & Sons
Page : 396 pages
File Size : 40,8 Mb
Release : 2018-10-09
Category : Science
ISBN : 9781119437406

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Rational Design of Solar Cells for Efficient Solar Energy Conversion by Alagarsamy Pandikumar,Ramasamy Ramaraj Pdf

An interdisciplinary guide to the newest solar cell technology for efficient renewable energy Rational Design of Solar Cells for Efficient Solar Energy Conversion explores the development of the most recent solar technology and materials used to manufacture solar cells in order to achieve higher solar energy conversion efficiency. The text offers an interdisciplinary approach and combines information on dye-sensitized solar cells, organic solar cells, polymer solar cells, perovskite solar cells, and quantum dot solar cells. The text contains contributions from noted experts in the fields of chemistry, physics, materials science, and engineering. The authors review the development of components such as photoanodes, sensitizers, electrolytes, and photocathodes for high performance dye-sensitized solar cells. In addition, the text puts the focus on the design of material assemblies to achieve higher solar energy conversion. This important resource: Offers a comprehensive review of recent developments in solar cell technology Includes information on a variety of solar cell materials and devices, focusing on dye-sensitized solar cells Contains a thorough approach beginning with the fundamental material characterization and concluding with real-world device application. Presents content from researchers in multiple fields of study such as physicists, engineers, and material scientists Written for researchers, scientists, and engineers in university and industry laboratories, Rational Design of Solar Cells for Efficient Solar Energy Conversion offers a comprehensive review of the newest developments and applications of solar cells with contributions from a range of experts in various disciplines.

Physics of High-Speed Transistors

Author : Juras Pozela
Publisher : Springer Science & Business Media
Page : 351 pages
File Size : 51,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781489912428

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Physics of High-Speed Transistors by Juras Pozela Pdf

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Best of Soviet Semiconductor Physics and Technology

Author : Mikhail Levinshtein,Michael Shur
Publisher : Springer Science & Business Media
Page : 392 pages
File Size : 54,9 Mb
Release : 1991-02
Category : Science
ISBN : 0883187833

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Best of Soviet Semiconductor Physics and Technology by Mikhail Levinshtein,Michael Shur Pdf

Culled from the thousands of papers published in American Institute of

Advanced Concepts in Photovoltaics

Author : Arthur J. Nozik,Gavin Conibeer,Matthew C Beard
Publisher : Royal Society of Chemistry
Page : 608 pages
File Size : 51,9 Mb
Release : 2014-07-10
Category : Science
ISBN : 9781849739955

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Advanced Concepts in Photovoltaics by Arthur J. Nozik,Gavin Conibeer,Matthew C Beard Pdf

Photovoltaic systems enable the sun’s energy to be converted directly into electricity using semiconductor solar cells. The ultimate goal of photovoltaic research and development is to reduce the cost of solar power to reach or even become lower than the cost of electricity generated from fossil and nuclear fuels. The power conversion efficiency and the cost per unit area of the phototvoltaic system are critical factors that determine the cost of photovoltaic electricity. Until recently, the power conversion efficiency of single-junction photovoltaic cells has been limited to approximately 33% - the so-called Shockley-Queisser limit. This book presents the latest developments in photovoltaics which seek to either reach or surpass the Shockley-Queisser limit, and to lower the cell cost per unit area. Progress toward this ultimate goal is presented for the three generations of photovoltaic cells: the 1st generation based on crystalline silicon semiconductors; the 2nd generation based on thin film silicon, compound semiconductors, amorphous silicon, and various mesoscopic structures; and the 3rd generation based on the unique properties of nanoscale materials, new inorganic and organic photoconversion materials, highly efficient multi-junction cells with low cost solar concentration, and novel photovoltaic processes. The extent to which photovoltaic materials and processes can meet the expectations of efficient and cost effective solar energy conversion to electricity is discussed. Written by an international team of expert contributors, and with researchers in academia, national research laboratories, and industry in mind, this book is a comprehensive guide to recent progress in photovoltaics and essential for any library or laboratory in the field.

Spectroscopy of Nonequilibrium Electrons and Phonons

Author : C.V. Shank,B.P. Zakharchenya
Publisher : Elsevier
Page : 513 pages
File Size : 55,5 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780444600578

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Spectroscopy of Nonequilibrium Electrons and Phonons by C.V. Shank,B.P. Zakharchenya Pdf

The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.