Iii Nitride Semiconductors Electrical Structural And Defects Properties

Author : M.O. Manasreh
Publisher : Elsevier
Page : 464 pages
File Size : 44,6 Mb
Release : 2000-12-06
Category : Science
ISBN : 0080534449

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III-Nitride Semiconductors: Electrical, Structural and Defects Properties by M.O. Manasreh Pdf

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Author : Edward T. Yu
Publisher : CRC Press
Page : 718 pages
File Size : 54,7 Mb
Release : 2022-10-30
Category : Technology & Engineering
ISBN : 9781000723779

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III-V Nitride Semiconductors by Edward T. Yu Pdf

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Author : Michael Shur,Robert Foster Davis
Publisher : World Scientific
Page : 295 pages
File Size : 48,7 Mb
Release : 2004
Category : Technology & Engineering
ISBN : 9789812388445

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GaN-based Materials and Devices by Michael Shur,Robert Foster Davis Pdf

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Author : Mohamed Henini
Publisher : Elsevier
Page : 640 pages
File Size : 45,5 Mb
Release : 2004-12-15
Category : Technology & Engineering
ISBN : 9780080455990

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Dilute Nitride Semiconductors by Mohamed Henini Pdf

This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Author : Takafumi Yao,Soon-Ku Hong
Publisher : Springer Science & Business Media
Page : 525 pages
File Size : 53,5 Mb
Release : 2009-03-20
Category : Technology & Engineering
ISBN : 9783540888475

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Oxide and Nitride Semiconductors by Takafumi Yao,Soon-Ku Hong Pdf

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Author : James H. Edgar
Publisher : Institution of Electrical Engineers
Page : 328 pages
File Size : 49,5 Mb
Release : 1994
Category : Aluminum
ISBN : UOM:39015034220262

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Properties of Group III Nitrides by James H. Edgar Pdf

The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.

Author : Takafumi Yao,Soon-Ku Hong
Publisher : Springer
Page : 518 pages
File Size : 44,5 Mb
Release : 2009-04-29
Category : Technology & Engineering
ISBN : 3540888462

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Oxide and Nitride Semiconductors by Takafumi Yao,Soon-Ku Hong Pdf

This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Author : Tanya Paskova
Publisher : John Wiley & Sons
Page : 470 pages
File Size : 53,9 Mb
Release : 2008-03-31
Category : Technology & Engineering
ISBN : 3527407685

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Nitrides with Nonpolar Surfaces by Tanya Paskova Pdf

This text discusses in detail the present stage of development of nonpolar nitrides, with special emphasis on the three main topics of crystal growth, properties, and device studies. All nonpolar nitride materials and all known growth techniques which are currently under strong investigation are covered.

Author : T. Q. Khan,P. Bodrogi,Q. T. Vinh,H. Winkler
Publisher : John Wiley & Sons
Page : 517 pages
File Size : 40,7 Mb
Release : 2015-02-09
Category : Science
ISBN : 9783527412129

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LED Lighting by T. Q. Khan,P. Bodrogi,Q. T. Vinh,H. Winkler Pdf

Promoting the design, application and evaluation of visually and electrically effective LED light sources and luminaires for general indoor lighting as well as outdoor and vehicle lighting, this book combines the knowledge of LED lighting technology with human perceptual aspects for lighting scientists and engineers. After an introduction to the human visual system and current radiometry, photometry and color science, the basics of LED chip and phosphor technology are described followed by specific issues of LED radiometry and the optical, thermal and electric modeling of LEDs. This is supplemented by the relevant practical issues of pulsed LEDs, remote phosphor LEDs and the aging of LED light sources. Relevant human visual aspects closely related to LED technology are described in detail for the photopic and the mesopic range of vision, including color rendering, binning, whiteness, Circadian issues, as well as flicker perception, brightness, visual performance, conspicuity and disability glare. The topic of LED luminaires is discussed in a separate chapter, including retrofit LED lamps, LED-based road and street luminaires and LED luminaires for museum and school lighting. Specific sections are devoted to the modularity of LED luminaires, their aging and the planning and evaluation methods of new LED installations. The whole is rounded off by a summary and a look towards future developments.

Author : Hadis Morkoç
Publisher : Springer Science & Business Media
Page : 511 pages
File Size : 46,6 Mb
Release : 2013-03-08
Category : Technology & Engineering
ISBN : 9783642585623

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Nitride Semiconductors and Devices by Hadis Morkoç Pdf

This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

Author : Sergio Pizzini
Publisher : Royal Society of Chemistry
Page : 375 pages
File Size : 50,7 Mb
Release : 2023-12-24
Category : Science
ISBN : 9781839162121

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Chemistry of Semiconductors by Sergio Pizzini Pdf

Author : M Razeghi,Mohamed Henini
Publisher : Elsevier
Page : 602 pages
File Size : 49,8 Mb
Release : 2004
Category : Science
ISBN : 0080444261

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Optoelectronic Devices by M Razeghi,Mohamed Henini Pdf

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Author : Ishaq Ahmad
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 53,6 Mb
Release : 2017-06-14
Category : Science
ISBN : 9789535132370

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Ion Implantation by Ishaq Ahmad Pdf

Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.

Author : Dirk Ehrentraut,Elke Meissner,Michal Bockowski
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 46,9 Mb
Release : 2010-06-14
Category : Science
ISBN : 9783642048302

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Technology of Gallium Nitride Crystal Growth by Dirk Ehrentraut,Elke Meissner,Michal Bockowski Pdf

This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Author : P. M. Visakh,Cristina Della Pina,Ermelinda Falletta
Publisher : Elsevier
Page : 358 pages
File Size : 42,5 Mb
Release : 2017-11-08
Category : Technology & Engineering
ISBN : 9780128095669

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Polyaniline Blends, Composites, and Nanocomposites by P. M. Visakh,Cristina Della Pina,Ermelinda Falletta Pdf

Polyaniline Blends, Composites, and Nanocomposites summarizes recent advances in polyaniline-based blends, composites and nanocomposites. Polyaniline (PANI) is a conducting polymer with a range of potential applications, particularly in electronics and packaging. The book covers the preparation, characterization and application of PANI-based composites, including the structure-property relationship and modification of PANI. Offers an in-depth update on the major findings and observations in the field of polyaniline-based blends, composites and nanocomposites, with contributions from leading researchers in industry, academia, government and private research institutions worldwide. An application-oriented, practical guide to the development and application of this polymeric material. The book includes discussion of reinforcement of polyaniline via addition of carbon-based materials, blends with thermoplastics, thermosets, natural and synthetic rubber, and polyaniline based composites and nanocomposites, with an emphasis on enabling polymer scientists and engineers to more effectively utilize this material in new applications. Includes an in-depth update on the state of research into this exciting material, with detailed and practical information for developing emerging applications of polyaniline Enables polymer scientists and engineers to overcome challenges and take advantage of opportunities relating to polyaniline, e.g., solubility of the polymer, improving conductivity and more Includes detailed coverage of the preparation, characterization and application of PANI-based composites in detail, along with the structure-property relationship and modification of PANI