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Author : K. V. Ravi
Publisher : John Wiley & Sons
Page : 408 pages
File Size : 46,6 Mb
Release : 1981
Category : Semiconductors
ISBN : UOM:39015002917170
Author : V. I. Talanin,I. E. Talanin
Publisher : Cambridge Scholars Publishing
Page : 281 pages
File Size : 46,7 Mb
Release : 2018-12-14
Category : Science
ISBN : 9781527523425
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 554 pages
File Size : 52,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : R.A. Levy
Publisher : Springer Science & Business Media
Page : 992 pages
File Size : 45,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9789400909175
The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Author : Victor I. Fistul
Publisher : CRC Press
Page : 448 pages
File Size : 51,9 Mb
Release : 2004-01-27
Category : Science
ISBN : 9780203299258
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Author : Anonim
Publisher : Academic Press
Page : 376 pages
File Size : 45,8 Mb
Release : 1998-07-02
Category : Technology & Engineering
ISBN : 0080864481
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author : Oleg Velichko
Publisher : World Scientific
Page : 404 pages
File Size : 43,5 Mb
Release : 2019-11-05
Category : Technology & Engineering
ISBN : 9781786347176
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Author : R. G. Rhodes
Publisher : Elsevier
Page : 386 pages
File Size : 46,7 Mb
Release : 2014-05-12
Category : Science
ISBN : 9781483222813
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Author : Victor A. Perevostchikov,Vladimir D. Skoupov
Publisher : Springer Science & Business Media
Page : 412 pages
File Size : 51,6 Mb
Release : 2005-09-15
Category : Science
ISBN : 354026244X
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author : D. B. Holt,B. G. Yacobi
Publisher : Cambridge University Press
Page : 625 pages
File Size : 47,8 Mb
Release : 2007-04-12
Category : Science
ISBN : 9781139463591
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : Gudrun Kissinger,Sergio Pizzini
Publisher : CRC Press
Page : 436 pages
File Size : 40,7 Mb
Release : 2014-12-09
Category : Science
ISBN : 9781466586642
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author : Fumio Shimura
Publisher : Elsevier
Page : 435 pages
File Size : 43,9 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323150484
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Author : Edward L. Kern
Publisher : Unknown
Page : 788 pages
File Size : 40,6 Mb
Release : 1969
Category : Semiconductors
ISBN : CORNELL:31924003908534
Author : Stephen J. Pearton,James W. Corbett,Michael Stavola
Publisher : Springer Science & Business Media
Page : 374 pages
File Size : 50,5 Mb
Release : 2013-03-08
Category : Science
ISBN : 9783642847783
vgl. Hardcoverausgabe.
Author : Richard B. Fair
Publisher : Academic Press
Page : 441 pages
File Size : 53,8 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323139809
This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.