Implementing Gaas

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Control Components Using Si, GaAs, and GaN Technologies

Author : Inder J. Bahl
Publisher : Artech House
Page : 324 pages
File Size : 53,9 Mb
Release : 2014-09-01
Category : Technology & Engineering
ISBN : 9781608077120

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Control Components Using Si, GaAs, and GaN Technologies by Inder J. Bahl Pdf

Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.

Implementing GAAS 2012-13

Author : Peter Chidgey,Sarah Nendick
Publisher : Croner Cch Group Limited
Page : 1001 pages
File Size : 55,6 Mb
Release : 2012-06-01
Category : Auditing
ISBN : 1847984959

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Implementing GAAS 2012-13 by Peter Chidgey,Sarah Nendick Pdf

Introduction to Noise-Resilient Computing

Author : Svetlana N. Yanushkevich,Seiya Kasai,Golam Tangim,A.H. Tran
Publisher : Springer Nature
Page : 132 pages
File Size : 48,8 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031798559

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Introduction to Noise-Resilient Computing by Svetlana N. Yanushkevich,Seiya Kasai,Golam Tangim,A.H. Tran Pdf

Noise abatement is the key problem of small-scaled circuit design. New computational paradigms are needed -- as these circuits shrink, they become very vulnerable to noise and soft errors. In this lecture, we present a probabilistic computation framework for improving the resiliency of logic gates and circuits under random conditions induced by voltage or current fluctuation. Among many probabilistic techniques for modeling such devices, only a few models satisfy the requirements of efficient hardware implementation -- specifically, Boltzman machines and Markov Random Field (MRF) models. These models have similar built-in noise-immunity characteristics based on feedback mechanisms. In probabilistic models, the values 0 and 1 of logic functions are replaced by degrees of beliefs that these values occur. An appropriate metric for degree of belief is probability. We discuss various approaches for noise-resilient logic gate design, and propose a novel design taxonomy based on implementation of the MRF model by a new type of binary decision diagram (BDD), called a cyclic BDD. In this approach, logic gates and circuits are designed using 2-to-1 bi-directional switches. Such circuits are often modeled using Shannon expansions with the corresponding graph-based implementation, BDDs. Simulation experiments are reported to show the noise immunity of the proposed structures. Audiences who may benefit from this lecture include graduate students taking classes on advanced computing device design, and academic and industrial researchers. Table of Contents: Introduction to probabilistic computation models / Nanoscale circuits and fluctuation problems / Estimators and Metrics / MRF Models of Logic Gates / Neuromorphic models / Noise-tolerance via error correcting / Conclusion and future work

Implementing GAAS

Author : Peter Chidgey,Helen MacNeil,Sarah Nendick
Publisher : Unknown
Page : 967 pages
File Size : 42,9 Mb
Release : 2013-06
Category : Auditing
ISBN : 1847986587

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Implementing GAAS by Peter Chidgey,Helen MacNeil,Sarah Nendick Pdf

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Intelligent Integrated Systems

Author : Simon Deleonibus
Publisher : CRC Press
Page : 518 pages
File Size : 55,8 Mb
Release : 2014-04-09
Category : Technology & Engineering
ISBN : 9789814411424

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Intelligent Integrated Systems by Simon Deleonibus Pdf

This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

Novel Compound Semiconductor Nanowires

Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Page : 501 pages
File Size : 42,8 Mb
Release : 2017-10-17
Category : Science
ISBN : 9781315340722

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Novel Compound Semiconductor Nanowires by Fumitaro Ishikawa,Irina Buyanova Pdf

One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Advanced Microsystems for Automotive Applications 2008

Author : Jürgen Valldorf,Wolfgang Gessner
Publisher : Springer Science & Business Media
Page : 308 pages
File Size : 43,7 Mb
Release : 2008-04-16
Category : Technology & Engineering
ISBN : 9783540779803

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Advanced Microsystems for Automotive Applications 2008 by Jürgen Valldorf,Wolfgang Gessner Pdf

With the total number of vehicles steadily increasing and soon approaching one billion, the world is facing serious challenges in terms of both safety of road transport and sustainability. Consequently the two major persistent issues for the automotive industry are improved safety and reduced emissions. The estimated number of road fatalities is about one million per year. Fast growth of mobility in the developing world and an accelerated urbanisation pose high demands to the automotive industry. Thanks to smart systems anticipating dangerous traffic situations road fatalities will have dropped by more than 30% from 2001 to 2010. Beyond intensive stock-rearing – with 30% the major contributor to climate change – road traffic is one of the main sectors contributing to climate change: exhaust gases from vehicle engines account for about 20% of the greenhouse gas emissions. Car industry is bearing this challenge and enormous progress has been achieved particularly during the last decade.

Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

Author : R. Szweda
Publisher : Elsevier
Page : 410 pages
File Size : 46,9 Mb
Release : 2000-12-05
Category : Technology & Engineering
ISBN : 0080532284

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Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004 by R. Szweda Pdf

The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

GaAs Devices and Circuits

Author : Michael S. Shur
Publisher : Springer Science & Business Media
Page : 677 pages
File Size : 53,8 Mb
Release : 2013-11-21
Category : Technology & Engineering
ISBN : 9781489919892

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GaAs Devices and Circuits by Michael S. Shur Pdf

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Parallel Computer Routing and Communication

Author : Kevin Bolding,Lawrence Snyder
Publisher : Springer Science & Business Media
Page : 340 pages
File Size : 45,7 Mb
Release : 1994-09-28
Category : Computers
ISBN : 3540584293

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Parallel Computer Routing and Communication by Kevin Bolding,Lawrence Snyder Pdf

This volume contains revised versions of the 23 regular papers presented at the First International Workshop on Parallel Computer Routing and Communication (PCRCW '94), held in Seattle, Washington in May 1994. Routing for parallel computer communication has recently experienced almost explosive activity: ever increasing processor speeds are placing greater demands on interprocessor communication, while technological advances offer new capabilities to respond to those demands. The contributions from industry and academia cover all areas, from details of hardware design to proofs of theoretical results. There are also many papers dealing with the performance of various adaptive routing schemes, new network topologies, network interfaces, and fault-tolerant issues.

Implementing Gaas

Author : Peter Chidgey,Jane Mitchell,Sarah Stone
Publisher : Unknown
Page : 600 pages
File Size : 47,9 Mb
Release : 2000-06-06
Category : Auditing
ISBN : 1853556041

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Implementing Gaas by Peter Chidgey,Jane Mitchell,Sarah Stone Pdf

This seventh edition of the annual gudie presents a fully practical approach, and is packed with detailed examples, tables, illustrations of recent audit reports and highlights of problem areas.

Structural refinement of single crystals using digital-large angle convergent beam electron diffraction

Author : AJM Hubert
Publisher : University of Warwick
Page : 178 pages
File Size : 52,5 Mb
Release : 2019-09-25
Category : Science
ISBN : 8210379456XXX

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Structural refinement of single crystals using digital-large angle convergent beam electron diffraction by AJM Hubert Pdf

We explore the capability of digital-large angle convergent beam electron diffraction (D-LACBED) data for the structural refinement of single crystals. To achieve this, we use three materials as test cases. We use corundum for atomic position refi nement, copper and gallium arsenide for Debye-Waller factor (DWF) re finement. D-LACBED patterns are found to be extremely sensitive to atomic position, within 0.4 pm of reference X-ray values. The patterns are less sensitive to DWF (using the independent atom model - IAM) but nonetheless give good agreement to X-ray and Mossbauer radiation values for copper. We find the IAM to be insufficient for accurate refinement of gallium arsenide due to the influence of previously suggested strong anharmonicity and bonding within the material. Finally, we use simulation to explore the sensitivity of D-LACBED patterns through most re fineable structural parameters, providing context to the aforementioned results. During the analysis we see that higher g-vector patterns within the D-LACBED data may be more sensitive to structural parameters in general.