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Author : E. H. Nicolliam,J. R. Brews
Publisher : Unknown
Page : 0 pages
File Size : 54,7 Mb
Release : 1982
Category : Electronic
ISBN : OCLC:819723659
Author : E. H. Nicolliam,J.R. Brews
Publisher : Unknown
Page : 844 pages
File Size : 41,5 Mb
Release : 1982
Category : Electronic
ISBN : OCLC:819723659
Author : E. H. Nicollian,J. R. Brews
Publisher : John Wiley & Sons
Page : 928 pages
File Size : 50,6 Mb
Release : 2002-11-21
Category : Technology & Engineering
ISBN : 9780471430797
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 676 pages
File Size : 41,8 Mb
Release : 2007
Category : Dielectrics
ISBN : 9781566775700
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Kim Ho Yeap,Humaira Nisar
Publisher : BoD – Books on Demand
Page : 162 pages
File Size : 55,9 Mb
Release : 2018-08-01
Category : Technology & Engineering
ISBN : 9781789234961
In this book, Complementary Metal Oxide Semiconductor ( CMOS ) devices are extensively discussed. The topics encompass the technology advancement in the fabrication process of metal oxide semiconductor field effect transistors or MOSFETs (which are the fundamental building blocks of CMOS devices) and the applications of transistors in the present and future eras. The book is intended to provide information on the latest technology development of CMOS to researchers, physicists, as well as engineers working in the field of semiconductor transistor manufacturing and design.
Author : Norman Einspruch
Publisher : Elsevier
Page : 382 pages
File Size : 54,9 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323153133
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Author : Zhigang Zang,Wensi Cai,Yong Zhou
Publisher : John Wiley & Sons
Page : 293 pages
File Size : 45,9 Mb
Release : 2023-12-11
Category : Technology & Engineering
ISBN : 9783527352258
Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.
Author : S. Kar,M. Houssa,S. Van Elshocht,D. Misra,K. Kita
Publisher : The Electrochemical Society
Page : 504 pages
File Size : 49,7 Mb
Release : 2011
Category : Electronic
ISBN : 9781607682578
Author : Shengkai Wang,Xiaolei Wang
Publisher : CRC Press
Page : 192 pages
File Size : 53,9 Mb
Release : 2021-10-05
Category : Technology & Engineering
ISBN : 9781000455762
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Author : Kevin Stella
Publisher : disserta Verlag
Page : 257 pages
File Size : 53,8 Mb
Release : 2011
Category : Science
ISBN : 9783942109888
Every day in our life is larded with a huge number of chemical reactions on surfaces. Some reactions occur immediately, for others an activation energy has to be supplied. Thus it happens that though a reaction should thermodynamically run off, it is kinetically hindered. Meaning the partners react only to the thermodynamically more stable product state within a mentionable time if the activation energy of the reaction is supplied. With the help of catalysts the activation energy of a reaction can be lowered. Such catalytic processes on surfaces are widely used in industry. Around 90% of chemicals are produced via a heterogeneously catalyzed process where a reaction occurs on the surface of a catalyst. However, why is it generally possible that such reactions run off with the help of heterogeneous catalysis, meaning with lower activation energy than without presence of a catalyst? What happens with the energy which is released during a reaction of gas particles on surfaces? How is this energy released, when some part of the energy is transferred to the reactant and some to the chemically active surface? Which physical mechanisms play a key role in the energy transfer? These questions are summarized in the concept of the energy dissipation. To observe this energy dissipation phenomenon, we use a new method, the chemoelectronics. With this method we try to detect the released energy, induced by reactions on surfaces, via thin-layered electronic device elements. An aim of this work is to build up very sensitive chemoelectronic sensors to measure electronic excitations released during such simple reactions of molecules as adsorption and desorption and more complicated reactions as the water formation reaction. Therefore a new line of chemoelectronic sensors is developed and characterized in terms of internal photoemission and stability. Meaning the previously used aluminum (Al-AlOx-Ag) and tantalum based (Ta-TaOx-Au) metal-insulator-metal sensors (MIM) are tested and new titanium based (Ti-TiOx-Au) MIMs are developed. Additionally silicon based stepped-metal-insulator-semiconductor sensors (stepped-MIS, Si-SiOx-Au, Si-SiOx-Pt) are set up and characterized. For the characterization of the chemoelectronic sensors the process of internal photoemission is used. Both, chemical- and photoexcitation release hot charge carriers (electrons and holes). Due to the existence of excited carriers in the sensor, a current can be measured without applying a bias voltage. It will be shown that the chemo- and the photosensitivity are strongly related to each other. As a first experiment for the chemical selectivity of the detectors, a stream of excited hydrogen molecules and hydrogen atoms is used. The excitation and radical formation is produced by the interaction of ground state molecules with a hot tungsten surface according to the pioneering experiments of Irving Langmuir. Additionally, excited oxygen beams are studied in this work.
Author : Yoshio Nishi,Robert Doering
Publisher : CRC Press
Page : 1720 pages
File Size : 49,8 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781420017663
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 51,6 Mb
Release : 2006
Category : Dielectrics
ISBN : 9781566775038
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 621 pages
File Size : 45,8 Mb
Release : 2010-10
Category : Science
ISBN : 9781566778220
The issue of ECS Transactions will cover comprehensively all the aspects of high-k material physics and technology: Diverse High Mobility Substrates, High-k Materials, Metal Gate Electrode Materials, Deposition Techniques, Bulk Material Properties, Flat-Band Voltage Issues and Control, Interfaces, Gate Stack Reliability, Electrical, Chemical, and Physical Chatracterization, Novel Applications, High-k and Diverse Insulators for Photonics, High-k Processing/ Manufacturing.
Author : S. Kar
Publisher : The Electrochemical Society
Page : 550 pages
File Size : 49,7 Mb
Release : 2008-10
Category : Dielectrics
ISBN : 9781566776516
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Robert H. Silsbee,Joerg Draeger
Publisher : CUP Archive
Page : 376 pages
File Size : 54,6 Mb
Release : 1997-06-28
Category : Science
ISBN : 0521590949
Interactive resource centering around fourteen high quality computer simulations covering essential topics in solid state physics.