Download Full eBooks in PDF
Physics And Technology Of High K Materials 9 Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Physics And Technology Of High K Materials 9 book. This book definitely worth reading, it is an incredibly well-written.
Author : S. Kar,M. Houssa,S. Van Elshocht,D. Misra,K. Kita
Publisher : The Electrochemical Society
Page : 504 pages
File Size : 48,5 Mb
Release : 2011
Category : Electronic
ISBN : 9781607682578
Author : Electrochemical Society (United States). Dielectric Science and Technology Division,Electrochemical Society,Electrochemical Society Electronics and Photonics Division
Publisher : ECS Transactions
Page : 492 pages
File Size : 50,6 Mb
Release : 2011-10
Category : Electronic
ISBN : 1566779030
The issue of ECS Transactions will cover diverse aspects of high permittivity and other dielectric materials including their physics, processing, characterization, and applications in nano-electronics and photonics. Special emphasis will be given on high mobility channels including Ge, GeSi, GaAs, InGaAs, InP, GaSb, InGaSb, GaN, and AlGaN channels. Other chapters include new transistor concepts, new memory and gate dielectrics, dielectric deposition and processing, characterization, defects, traps, and reliability, and resistive switching.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 621 pages
File Size : 55,9 Mb
Release : 2010-10
Category : Science
ISBN : 9781566778220
The issue of ECS Transactions will cover comprehensively all the aspects of high-k material physics and technology: Diverse High Mobility Substrates, High-k Materials, Metal Gate Electrode Materials, Deposition Techniques, Bulk Material Properties, Flat-Band Voltage Issues and Control, Interfaces, Gate Stack Reliability, Electrical, Chemical, and Physical Chatracterization, Novel Applications, High-k and Diverse Insulators for Photonics, High-k Processing/ Manufacturing.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 676 pages
File Size : 47,6 Mb
Release : 2007
Category : Dielectrics
ISBN : 9781566775700
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Anonim
Publisher : Unknown
Page : 605 pages
File Size : 51,8 Mb
Release : 2010
Category : Electronic
ISBN : 1607681722
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 512 pages
File Size : 51,5 Mb
Release : 2004
Category : Science
ISBN : 1566774055
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 44,5 Mb
Release : 2006
Category : Dielectrics
ISBN : 9781566775038
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : S. Kar
Publisher : The Electrochemical Society
Page : 550 pages
File Size : 45,9 Mb
Release : 2008-10
Category : Dielectrics
ISBN : 9781566776516
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Samares Kar
Publisher : Springer Science & Business Media
Page : 515 pages
File Size : 42,5 Mb
Release : 2013-06-25
Category : Technology & Engineering
ISBN : 9783642365355
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author : Samares Kar
Publisher : Unknown
Page : 330 pages
File Size : 52,9 Mb
Release : 2003
Category : Science
ISBN : UOM:39015061155555
Author : Gang He,Zhaoqi Sun
Publisher : John Wiley & Sons
Page : 560 pages
File Size : 40,9 Mb
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 9783527646364
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Author : Howard Huff
Publisher : Springer Science & Business Media
Page : 740 pages
File Size : 55,7 Mb
Release : 2005
Category : Science
ISBN : 3540210814
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author : C. Claeys,H. Iwai,M. Tao,S. Deleonibus,J. Murota
Publisher : The Electrochemical Society
Page : 429 pages
File Size : 51,7 Mb
Release : 2011
Category : Electronic
ISBN : 9781607682615
Author : Shubham Tayal,Parveen Singla,J. Paulo Davim
Publisher : CRC Press
Page : 176 pages
File Size : 40,6 Mb
Release : 2021-09-16
Category : Technology & Engineering
ISBN : 9781000438789
High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Author : Tibor Grasser
Publisher : Springer Science & Business Media
Page : 810 pages
File Size : 48,8 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9781461479093
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.