Near Infrared Detectors Based On Silicon Supersaturated With Transition Metals

Author : Daniel Montero Álvarez
Publisher : Unknown
Page : 0 pages
File Size : 51,6 Mb
Release : 2021
Category : Electronic
ISBN : 3030638278

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Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals by Daniel Montero Álvarez Pdf

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Author : Daniel Montero Álvarez
Publisher : Springer Nature
Page : 262 pages
File Size : 50,8 Mb
Release : 2021-01-08
Category : Technology & Engineering
ISBN : 9783030638269

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Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals by Daniel Montero Álvarez Pdf

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Author : Fuccio Cristiano,Antonino La Magna
Publisher : Woodhead Publishing
Page : 426 pages
File Size : 42,5 Mb
Release : 2021-04-21
Category : Technology & Engineering
ISBN : 9780128202562

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Laser Annealing Processes in Semiconductor Technology by Fuccio Cristiano,Antonino La Magna Pdf

Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors

Author : Anonim
Publisher : Unknown
Page : 716 pages
File Size : 41,9 Mb
Release : 1994
Category : Aeronautics
ISBN : UIUC:30112067190063

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Scientific and Technical Aerospace Reports by Anonim Pdf

Author : Anonim
Publisher : Unknown
Page : 940 pages
File Size : 41,6 Mb
Release : 1994
Category : Physics
ISBN : UOM:39015027162216

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Physics Briefs by Anonim Pdf

Author : Anonim
Publisher : Unknown
Page : 978 pages
File Size : 52,8 Mb
Release : 1967
Category : Nuclear energy
ISBN : UOM:39015026176431

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Nuclear Science Abstracts by Anonim Pdf

Author : Anonim
Publisher : Unknown
Page : 1040 pages
File Size : 51,9 Mb
Release : 1984
Category : Metallurgy
ISBN : CORNELL:31924071758548

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Metals Abstracts by Anonim Pdf

Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 480 pages
File Size : 48,6 Mb
Release : 1991
Category : Government publications
ISBN : UOM:39015057260781

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Publications by United States. National Bureau of Standards Pdf

Author : National Institute of Standards and Technology (U.S.)
Publisher : Unknown
Page : 480 pages
File Size : 49,8 Mb
Release : 1991
Category : Electronic
ISBN : UIUC:30112101978663

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Publications of the National Institute of Standards and Technology ... Catalog by National Institute of Standards and Technology (U.S.) Pdf

Author : Charles P. Marsden
Publisher : Unknown
Page : 472 pages
File Size : 45,8 Mb
Release : 1970
Category : Electronics
ISBN : UOM:39015086499962

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Silicon Device Processing by Charles P. Marsden Pdf

The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Author : Anonim
Publisher : Unknown
Page : 470 pages
File Size : 40,6 Mb
Release : 1995
Category : Aeronautics
ISBN : UOM:39015035265175

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International Aerospace Abstracts by Anonim Pdf

Author : Rosario Gerhardt
Publisher : BoD – Books on Demand
Page : 550 pages
File Size : 49,5 Mb
Release : 2011-04-04
Category : Science
ISBN : 9789533072012

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Properties and Applications of Silicon Carbide by Rosario Gerhardt Pdf

In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Author : Munir H. Nayfeh
Publisher : Elsevier
Page : 602 pages
File Size : 52,5 Mb
Release : 2018-06-29
Category : Science
ISBN : 9780323480581

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Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines by Munir H. Nayfeh Pdf

Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers

Author : Golla Eranna
Publisher : CRC Press
Page : 432 pages
File Size : 52,9 Mb
Release : 2014-12-08
Category : Science
ISBN : 9781482232813

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Crystal Growth and Evaluation of Silicon for VLSI and ULSI by Golla Eranna Pdf

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Author : Toshihiro Arai,Kazuhiro Mihama,Keiichi Yamamoto,Satoru Sugano
Publisher : Springer
Page : 458 pages
File Size : 45,9 Mb
Release : 2014-04-18
Category : Science
ISBN : 366208676X

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Mesoscopic Materials and Clusters by Toshihiro Arai,Kazuhiro Mihama,Keiichi Yamamoto,Satoru Sugano Pdf

Mesoscopic physics is a fast growing discipline with countless potential applications. Understanding the science of mesoscopic materials with unique physical and chemical properties is important for the design of nanodevices and materials with unique properties. Clusters as mesoscopic particles represent an intermediate state of matter between single atoms and solid material. This book deals with the properties of clusters in matrixes, on surfaces, and in vacuum. The formation and application of cluster-based materials is discussed. This book will appeal to physicists, chemists, materials researchers, and advanced students.