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Author : Michael Hoffmann
Publisher : Unknown
Page : 170 pages
File Size : 45,7 Mb
Release : 2020
Category : Electronic
ISBN : 9783752633696
Author : Michael Hoffmann
Publisher : BoD – Books on Demand
Page : 172 pages
File Size : 51,9 Mb
Release : 2020-09-15
Category : Technology & Engineering
ISBN : 9783751999366
This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
Publisher : Woodhead Publishing
Page : 570 pages
File Size : 40,7 Mb
Release : 2019-03-27
Category : Technology & Engineering
ISBN : 9780081024317
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Author : Young Suh Song,Shubham Tayal,Shiromani Balmukund Rahi,Abhishek Kumar Upadhyay
Publisher : CRC Press
Page : 167 pages
File Size : 51,7 Mb
Release : 2023-10-31
Category : Technology & Engineering
ISBN : 9781000933338
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Author : Young Suh Song,Shubham Tayal,Shiromani Balmukund Rahi,Abhishek Kumar Upadhyay
Publisher : CRC Press
Page : 149 pages
File Size : 47,8 Mb
Release : 2023-10-31
Category : Technology & Engineering
ISBN : 9781000933321
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Author : Nadine Collaert
Publisher : Woodhead Publishing
Page : 384 pages
File Size : 45,9 Mb
Release : 2018-06-29
Category : Technology & Engineering
ISBN : 9780081020623
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits
Author : Muhammad Mustafa Hussain
Publisher : John Wiley & Sons
Page : 284 pages
File Size : 48,7 Mb
Release : 2019-01-04
Category : Technology & Engineering
ISBN : 9783527343584
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Author : Shubham Sahay,Mamidala Jagadesh Kumar
Publisher : John Wiley & Sons
Page : 496 pages
File Size : 51,7 Mb
Release : 2019-01-25
Category : Technology & Engineering
ISBN : 9781119523512
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author : D. Ter Haar
Publisher : Elsevier
Page : 859 pages
File Size : 40,5 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483152707
Collected Papers of L. D. Landau brings together the collected papers of L. D. Landau in the field of physics. The discussion is divided into the following sections: low-temperature physics (including superconductivity); solid-state physics; plasma physics; hydrodynamics; astrophysics; nuclear physics and cosmic rays; quantum mechanics; quantum field theory; and miscellaneous works. Topics covered include the intermediate state of supraconductors; the absorption of sound in solids; the properties of metals at very low temperatures; and production of showers by heavy particles. This volume is comprised of 100 chapters and begins with Landau's paper on the theory of the spectra of diatomic molecules, followed by his studies on the damping problem in wave mechanics; quantum electrodynamics in configuration space; electron motion in crystal lattices; and the internal temperature of stars. Some of Landau's theories, such as those of stars, energy transfer on collisions, phase transitions, and specific heat anomalies are discussed. Subsequent chapters focus on the structure of the undisplaced scattering line; the transport equation in the case of Coulomb interactions; scattering of light by light; and the origin of stellar energy. This book will be a valuable resource for physicists as well as physics students and researchers.
Author : M. E. Lines,A. M. Glass
Publisher : Oxford University Press
Page : 700 pages
File Size : 54,6 Mb
Release : 2001-02
Category : Science
ISBN : 019850778X
This is a standard work on ferroelectrics.
Author : Young Suh Song
Publisher : Springer Nature
Page : 930 pages
File Size : 51,6 Mb
Release : 2024-07-01
Category : Electronic
ISBN : 9789819966493
Author : Tsu-Jae King Liu,Kelin Kuhn
Publisher : Cambridge University Press
Page : 439 pages
File Size : 52,5 Mb
Release : 2015-02-05
Category : Computers
ISBN : 9781107043183
Get up to speed with the future of logic switch design with this indispensable introduction to post-CMOS technologies.
Author : Dharmendra Singh Yadav,Shiromani Balmukund Rahi,Sukeshni Tirkey
Publisher : CRC Press
Page : 370 pages
File Size : 45,5 Mb
Release : 2023-12-18
Category : Technology & Engineering
ISBN : 9781003816287
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author : Rajendra Singh
Publisher : Springer Nature
Page : 406 pages
File Size : 47,9 Mb
Release : 2024-07-01
Category : Electronic
ISBN : 9789819715718
Author : Karin M. Rabe,Charles H. Ahn,Jean-Marc Triscone
Publisher : Springer Science & Business Media
Page : 395 pages
File Size : 50,8 Mb
Release : 2007-07-20
Category : Technology & Engineering
ISBN : 9783540345916
The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.