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Author : Kazutaka Tomizawa
Publisher : Artech House on Demand
Page : 341 pages
File Size : 49,9 Mb
Release : 1993-01-01
Category : Mathematics
ISBN : 0890066205
Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.
Author : Christoph Jungemann,Bernd Meinerzhagen
Publisher : Springer Science & Business Media
Page : 278 pages
File Size : 41,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709160862
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author : Abel Garcia-Barrientos,Vladimir Grimalsky
Publisher : Unknown
Page : 198 pages
File Size : 54,9 Mb
Release : 2013-10-21
Category : Electronic
ISBN : 1493557254
The investigation of new materials, devices and techniques to improve the performance of telecommunications, spectroscopy and radar systems applications, has caused that the study of non-stationary effects of space charge in semiconductor structures be a strategy research area in the field of high speed semiconductor devices. Therefore, this book focuses in the study of the non-stationary effects of the space charge in semiconductor structures, where the nonlinear wave interaction in active media may serve to improve the high-frequency performance of semiconductor devices.
Author : Siegfried Selberherr,Hannes Stippel,Ernst Strasser
Publisher : Springer Science & Business Media
Page : 525 pages
File Size : 45,9 Mb
Release : 2012-12-06
Category : Computers
ISBN : 9783709166574
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author : Heiner Ryssel,Peter Pichler
Publisher : Springer Science & Business Media
Page : 515 pages
File Size : 51,6 Mb
Release : 2012-12-06
Category : Computers
ISBN : 9783709166192
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author : Roland Kircher,Wolfgang Bergner
Publisher : Birkhauser
Page : 140 pages
File Size : 41,5 Mb
Release : 1991
Category : Science
ISBN : UOM:39015024986211
Author : Christopher M. Snowden
Publisher : World Scientific
Page : 242 pages
File Size : 49,8 Mb
Release : 1998
Category : Science
ISBN : 981023693X
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author : Mykhaylo Andriychuk
Publisher : BoD – Books on Demand
Page : 662 pages
File Size : 45,7 Mb
Release : 2012-09-19
Category : Computers
ISBN : 9789535107491
Numerical Simulation - from Theory to Industry is the edited book containing 25 chapters and divided into four parts. Part 1 is devoted to the background and novel advances of numerical simulation; second part contains simulation applications in the macro- and micro-electrodynamics. Part 3 includes contributions related to fluid dynamics in the natural environment and scientific applications; the last, fourth part is dedicated to simulation in the industrial areas, such as power engineering, metallurgy and building. Recent numerical techniques, as well as software the most accurate and advanced in treating the physical phenomena, are applied in order to explain the investigated processes in terms of numbers. Since the numerical simulation plays a key role in both theoretical and industrial research, this book related to simulation of many physical processes, will be useful for the pure research scientists, applied mathematicians, industrial engineers, and post-graduate students.
Author : Harold L. Grubin,David K. Ferry,C. Jacoboni
Publisher : Springer Science & Business Media
Page : 729 pages
File Size : 50,9 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781489923820
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author : Randolph E. Bank
Publisher : American Mathematical Soc.
Page : 206 pages
File Size : 41,5 Mb
Release : 1990-02-15
Category : Technology & Engineering
ISBN : 0821896938
Numerical simulation is rapidly becoming an important part of the VLSI design process, allowing the engineer to test, evaluate, and optimize various aspects of chip design without resorting to the costly and time-consuming process of fabricating prototypes. This procedure not only accelerates the design process, but also improves the end product, since it is economically feasible to numerically simulate many more options than might otherwise be considered. With the enhanced computing power of today's computers, more sophisticated models are now being developed. This volume contains the proceedings of the AMS-SIAM Summer Seminar on Computational Aspects of VLSI Design, held at the Institute for Mathematics and Its Applications at the University of Minnesota, in the spring of 1987. The seminar featured presentations by some of the top experts working in this area. Their contributions to this volume form an excellent overview of the mathematical and computational problems arising in this area.
Author : C.K Maiti,G.A Armstrong
Publisher : CRC Press
Page : 402 pages
File Size : 42,8 Mb
Release : 2001-07-20
Category : Science
ISBN : 9781420034691
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Author : Dietmar Schroeder
Publisher : Springer Science & Business Media
Page : 234 pages
File Size : 52,8 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9783709166444
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Author : Mike Golio
Publisher : CRC Press
Page : 410 pages
File Size : 49,5 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781351836203
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
Author : Joachim Piprek
Publisher : CRC Press
Page : 887 pages
File Size : 43,8 Mb
Release : 2017-10-12
Category : Science
ISBN : 9781498749572
Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.
Author : Michael Shearer
Publisher : SIAM
Page : 272 pages
File Size : 41,6 Mb
Release : 1991-01-01
Category : Science
ISBN : 0898712831
One strongly represented theme is the power of ideas from dynamical systems that are being adapted and developed in the context of shock waves.
