On Chip Esd Protection For Integrated Circuits

Author : Albert Z.H. Wang
Publisher : Springer Science & Business Media
Page : 310 pages
File Size : 53,6 Mb
Release : 2006-01-03
Category : Technology & Engineering
ISBN : 9780306476181

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On-Chip ESD Protection for Integrated Circuits by Albert Z.H. Wang Pdf

This comprehensive and insightful book discusses ESD protection circuit design problems from an IC designer's perspective. On-Chip ESD Protection for Integrated Circuits: An IC Design Perspective provides both fundamental and advanced materials needed by a circuit designer for designing ESD protection circuits, including: Testing models and standards adopted by U.S. Department of Defense, EIA/JEDEC, ESD Association, Automotive Electronics Council, International Electrotechnical Commission, etc. ESD failure analysis, protection devices, and protection of sub-circuits Whole-chip ESD protection and ESD-to-circuit interactions Advanced low-parasitic compact ESD protection structures for RF and mixed-signal IC's Mixed-mode ESD simulation-design methodologies for design prediction ESD-to-circuit interactions, and more! Many real world ESD protection circuit design examples are provided. The book can be used as a reference book for working IC designers and as a textbook for students in the IC design field.

Author : Vladislav Vashchenko,Mirko Scholz
Publisher : Springer Science & Business Media
Page : 320 pages
File Size : 44,7 Mb
Release : 2014-03-21
Category : Technology & Engineering
ISBN : 9783319032214

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System Level ESD Protection by Vladislav Vashchenko,Mirko Scholz Pdf

This book addresses key aspects of analog integrated circuits and systems design related to system level electrostatic discharge (ESD) protection. It is an invaluable reference for anyone developing systems-on-chip (SoC) and systems-on-package (SoP), integrated with system-level ESD protection. The book focuses on both the design of semiconductor integrated circuit (IC) components with embedded, on-chip system level protection and IC-system co-design. The readers will be enabled to bring the system level ESD protection solutions to the level of integrated circuits, thereby reducing or completely eliminating the need for additional, discrete components on the printed circuit board (PCB) and meeting system-level ESD requirements. The authors take a systematic approach, based on IC-system ESD protection co-design. A detailed description of the available IC-level ESD testing methods is provided, together with a discussion of the correlation between IC-level and system-level ESD testing methods. The IC-level ESD protection design is demonstrated with representative case studies which are analyzed with various numerical simulations and ESD testing. The overall methodology for IC-system ESD co-design is presented as a step-by-step procedure that involves both ESD testing and numerical simulations.

Author : Qiang Cui,Juin J. Liou,Jean-Jacques Hajjar,Javier Salcedo,Yuanzhong Zhou,Parthasarathy Srivatsan
Publisher : Springer
Page : 86 pages
File Size : 40,9 Mb
Release : 2015-03-10
Category : Technology & Engineering
ISBN : 9783319108193

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On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits by Qiang Cui,Juin J. Liou,Jean-Jacques Hajjar,Javier Salcedo,Yuanzhong Zhou,Parthasarathy Srivatsan Pdf

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.

Author : E. Ajith Amerasekera,Charvaka Duvvury
Publisher : John Wiley & Sons
Page : 434 pages
File Size : 47,6 Mb
Release : 2002-05-22
Category : Technology & Engineering
ISBN : UOM:39015054391290

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ESD in Silicon Integrated Circuits by E. Ajith Amerasekera,Charvaka Duvvury Pdf

* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

Author : Markus P. J. Mergens
Publisher : Unknown
Page : 177 pages
File Size : 51,7 Mb
Release : 2001
Category : Electrostatics
ISBN : 3896497014

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On-chip ESD Protection in Integrated Circuits by Markus P. J. Mergens Pdf

Author : Oleg Semenov,Hossein Sarbishaei,Manoj Sachdev
Publisher : Springer Science & Business Media
Page : 228 pages
File Size : 40,7 Mb
Release : 2008-04-26
Category : Technology & Engineering
ISBN : 9781402083013

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ESD Protection Device and Circuit Design for Advanced CMOS Technologies by Oleg Semenov,Hossein Sarbishaei,Manoj Sachdev Pdf

ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

Author : Sanjay Dabral,Timothy Maloney
Publisher : Wiley-Interscience
Page : 328 pages
File Size : 52,7 Mb
Release : 1998
Category : Computers
ISBN : UOM:39015045974170

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Basic ESD and I/O Design by Sanjay Dabral,Timothy Maloney Pdf

This volume presents an integrated treatment of ESD, I/O, and process parameter interactions that both I/O designers and process designers can use. It examines key factors in I/O and ESD design and testing, and helps the reader consider ESD and reliability issues up front when making I/O choices. Emphasizing clarity and simplicity, this book focuses on design principles that can be applied widely as this dynamic field continues to evolve.

Author : Albert Wang
Publisher : John Wiley & Sons
Page : 436 pages
File Size : 43,8 Mb
Release : 2022-01-06
Category : Technology & Engineering
ISBN : 9781119850403

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Practical ESD Protection Design by Albert Wang Pdf

An authoritative single-volume reference on the design and analysis of ESD protection for ICs Electrostatic discharge (ESD) is a major reliability challenge to semiconductors, integrated circuits (ICs), and microelectronic systems. On-chip ESD protection is a vital to any electronic products, such as smartphones, laptops, tablets, and other electronic devices. Practical ESD Protection Design provides comprehensive and systematic guidance on all major aspects of designs of on-chip ESD protection for integrated circuits (ICs). Written for students and practicing engineers alike, this one-stop resource covers essential theories, hands-on design skills, computer-aided design (CAD) methods, characterization and analysis techniques, and more on ESD protection designs. Detailed chapters examine an array of topics ranging from fundamental to advanced, including ESD phenomena, ESD failure analysis, ESD testing models, ESD protection devices and circuits, ESD design layout and technology effects, ESD design flows and co-design methods, ESD modelling and CAD techniques, and future ESD protection concepts. Based on the author’s decades of design, research and teaching experiences, Practical ESD Protection Design: • Features numerous real-world ESD protection design examples • Emphasizes on ESD protection design techniques and procedures • Describes ESD-IC co-design methodology for high-performance mixed-signal ICs and broadband radio-frequency (RF) ICs • Discusses CAD-based ESD protection design optimization and prediction using both Technology and Electrical Computer-Aided Design (TCAD/ECAD) simulation • Addresses new ESD CAD algorithms and tools for full-chip ESD physical design verification • Explores the disruptive future outlook of ESD protection Practical ESD Protection Design is a valuable reference for industrial engineers and academic researchers in the field, and an excellent textbook for electronic engineering courses in semiconductor microelectronics and integrated circuit designs.

Author : Juin J. Liou
Publisher : CRC Press
Page : 304 pages
File Size : 44,5 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781482255898

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Electrostatic Discharge Protection by Juin J. Liou Pdf

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.

Author : Shuqing Cao
Publisher : Stanford University
Page : 137 pages
File Size : 43,7 Mb
Release : 2010
Category : Electronic
ISBN : STANFORD:mr612py6371

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ESD Design Challenges and Strategies in Deeply-scaled Integrated Circuits by Shuqing Cao Pdf

It is the main objective of this work to address the scaling and design challenges of ESD protection in deeply scaled technologies. First, the thesis introduces the on-chip ESD events, the scaling and design challenges, and the nomenclatures necessary for later chapters. The ESD design window and the I/O schematics for both rail clamping and local clamping ESD schemes are illustrated. Then, the thesis delves into the investigation of the input and output driver devices and examines their robustness under ESD. The input driver's oxide breakdown levels are evaluated in deeply scaled technologies. The output driver's trigger and breakdown voltages are improved appreciably by applying circuit and device design techniques. The ESD device sections first discuss rail-based clamping, a widely used protection scheme. Two diode-based devices, namely the gated diode and substrate diode, are investigated in detail with SOI test structures. Characterization is based on DC current-voltage (I-V), Very Fast Transmission Line Pulse (VF-TLP), capacitance, and leakage measurements. Improvements in performance are realized. Technology computer aided design (TCAD) simulations help understand the physical effects and design tradeoffs. Then, the following section focuses on the local clamping scheme. Two devices, the field-effect diode (FED) and the double-well FED (DWFED), are developed and optimized in an SOI technology. Trigger circuits are designed to improve the turn-on speed. The advantages of local clamping is highlighted and compared with the rail-based clamping. The results show that the FED is a suitable option for power clamping applications and the DWFED is most suitable for pad-based local clamping. The thesis presents an ESD protection design methodology, which takes advantage of the results and techniques from pervious chapters and put each element into a useful format. Based on the correlation of package level and in-lab test results, a design process based on CDM target definition and device optimization, discharge path analysis, parasitic minimization, I/O data rate estimation and finally ESD and performance characterization is used sequentially to systematically realize the overall design goals.

Author : Harald Gossner,Kai Esmark,Wolfgang Stadler
Publisher : Elsevier
Page : 304 pages
File Size : 49,9 Mb
Release : 2003-10-16
Category : Science
ISBN : 0080526470

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Simulation Methods for ESD Protection Development by Harald Gossner,Kai Esmark,Wolfgang Stadler Pdf

Simulation Methods for ESD Protection Development looks at the integration of new techniques into a comprehensive development flow, which is now available due advances made in the field during the recent years. These findings allow for an early, stable ESD concept at a very early stage of the technology development, which is essential now development cycles have been reduced. The book also offers ways of increasing the optimization and control of the technology concerning performance, thus making the process more cost effective and increasingly efficient. This title provides a guide through the latest research and technology presenting the ESD protection development methodology. This is based on a combination of process, device and circuit stimulation, and addresses the optimization of the industry critical issue, reduced development cycles.Written to address the needs of the ESD engineer, this text is required reading by all industry practitioners and researchers and students within this field. The FIRST Extensive overview on the subject of ESD simulation Addresses the industry critical issue of reduced development cycles, and provides solutions Presents the latest research in the field with high practical relevance and its results

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 296 pages
File Size : 51,7 Mb
Release : 2015-01-05
Category : Technology & Engineering
ISBN : 9781118701478

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ESD by Steven H. Voldman Pdf

A comprehensive and in-depth review of analog circuitlayout, schematic architecture, device, power network and ESDdesign This book will provide a balanced overview of analog circuitdesign layout, analog circuit schematic development,architecture of chips, and ESD design. It will start atan introductory level and will bring the reader right up to thestate-of-the-art. Two critical design aspects for analog and powerintegrated circuits are combined. The first design aspect coversanalog circuit design techniques to achieve the desired circuitperformance. The second and main aspect presents the additionalchallenges associated with the design of adequate and effective ESDprotection elements and schemes. A comprehensive list of practicalapplication examples is used to demonstrate the successfulcombination of both techniques and any potential designtrade-offs. Chapter One looks at analog design discipline, including layoutand analog matching and analog layout design practices. Chapter Twodiscusses analog design with circuits, examining: singletransistor amplifiers; multi-transistor amplifiers; active loadsand more. The third chapter covers analog design layout (alsoMOSFET layout), before Chapters Four and Five discuss analog designsynthesis. The next chapters introduce the reader to analog-digitalmixed signal design synthesis, analog signal pin ESD networks, andanalog ESD power clamps. Chapter Nine, the last chapter, covers ESDdesign in analog applications. Clearly describes analog design fundamentals (circuitfundamentals) as well as outlining the various ESDimplications Covers a large breadth of subjects and technologies, such asCMOS, LDMOS, BCD, SOI, and thick body SOI Establishes an “ESD analog design” discipline thatdistinguishes itself from the alternative ESD digital designfocus Focuses on circuit and circuit design applications Assessible, with the artwork and tutorial style of the ESD bookseries PowerPoint slides are available for university facultymembers Even in the world of digital circuits, analog and power circuitsare two very important but under-addressed topics, especially fromthe ESD aspect. Dr. Voldman’s new book will serve as anessential and practical guide to the greater IC community. Withhigh practical and academic values this book is a“bible” for professionals, graduate students, deviceand circuit designers for investigating the physics of ESD and forproduct designs and testing.

Author : Carlos H. Diaz,Sung-Mo (Steve) Kang,Charvaka Duvvury
Publisher : Springer Science & Business Media
Page : 165 pages
File Size : 52,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461527886

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Modeling of Electrical Overstress in Integrated Circuits by Carlos H. Diaz,Sung-Mo (Steve) Kang,Charvaka Duvvury Pdf

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.

Author : Steven H. Voldman
Publisher : John Wiley & Sons
Page : 552 pages
File Size : 55,9 Mb
Release : 2015-04-24
Category : Technology & Engineering
ISBN : 9781118954478

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ESD by Steven H. Voldman Pdf

ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques. Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5. Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges. ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.

Author : Ming-Dou Ker,Sheng-Fu Hsu
Publisher : John Wiley & Sons
Page : 265 pages
File Size : 42,5 Mb
Release : 2009-07-23
Category : Technology & Engineering
ISBN : 9780470824085

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Transient-Induced Latchup in CMOS Integrated Circuits by Ming-Dou Ker,Sheng-Fu Hsu Pdf

The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.