Iii V Compound Semiconductors

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 51,7 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 46,8 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351

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Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 603 pages
File Size : 46,9 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236

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III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

Author : H. Craig Casey
Publisher : John Wiley & Sons
Page : 549 pages
File Size : 50,6 Mb
Release : 1998-12-14
Category : Technology & Engineering
ISBN : 9780471171348

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Devices for Integrated Circuits by H. Craig Casey Pdf

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 51,7 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474

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Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky,Peide Ye Pdf

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Author : Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi
Publisher : CRC Press
Page : 908 pages
File Size : 54,9 Mb
Release : 2002-09-30
Category : Science
ISBN : 0750308567

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Compound Semiconductors 2001 by Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi Pdf

An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.

Author : E. Fred Schubert
Publisher : E. Fred Schubert
Page : 128 pages
File Size : 53,9 Mb
Release : 2015-08-18
Category : Science
ISBN : 9780986382635

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Doping in III-V Semiconductors by E. Fred Schubert Pdf

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Author : Robert K. Willardson
Publisher : Unknown
Page : 553 pages
File Size : 51,6 Mb
Release : 1962
Category : Semiconductors
ISBN : OCLC:174294903

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Compound semiconductors. 1. Preparation of III-V compounds by Robert K. Willardson Pdf

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 52,7 Mb
Release : 1992-11-10
Category : Science
ISBN : 0471573299

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Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Author : Shiban Tiku,Dhrubes Biswas
Publisher : CRC Press
Page : 550 pages
File Size : 51,7 Mb
Release : 2016-04-27
Category : Science
ISBN : 9789814669313

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III-V Integrated Circuit Fabrication Technology by Shiban Tiku,Dhrubes Biswas Pdf

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.

Author : Cyril Hilsum,Alistair Christopher Rose-Innes
Publisher : Unknown
Page : 266 pages
File Size : 48,6 Mb
Release : 1961
Category : Compound semiconductors
ISBN : UOM:39015001335358

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Semiconducting III-V Compounds by Cyril Hilsum,Alistair Christopher Rose-Innes Pdf

Author : Paul H. Holloway,Gary E. McGuire
Publisher : Cambridge University Press
Page : 937 pages
File Size : 52,9 Mb
Release : 2008-10-19
Category : Technology & Engineering
ISBN : 9780080946146

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Handbook of Compound Semiconductors by Paul H. Holloway,Gary E. McGuire Pdf

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Author : Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou
Publisher : Springer Nature
Page : 65 pages
File Size : 40,9 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020285

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Compound Semiconductor Materials and Devices by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou Pdf

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Author : Anonim
Publisher : Elsevier
Page : 333 pages
File Size : 48,8 Mb
Release : 2001-10-20
Category : Science
ISBN : 9780080541013

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Processing and Properties of Compound Semiconductors by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Author : Robert K. Willardson,Harvey L. Goering
Publisher : Unknown
Page : 584 pages
File Size : 40,7 Mb
Release : 1962
Category : Semiconductors
ISBN : UCLA:L0060497054

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Compound Semiconductors by Robert K. Willardson,Harvey L. Goering Pdf