Iii V Compound Semiconductors And Devices

Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 47,9 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032

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III–V Compound Semiconductors and Devices by Keh Yung Cheng Pdf

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 41,5 Mb
Release : 2024-05-03
Category : Electronic
ISBN : 8210379456XXX

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Doping III-V compound semiconductor devices with group VI ... by Anonim Pdf

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 42,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468448351

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Physics and Chemistry of III-V Compound Semiconductor Interfaces by Carl Wilmsen Pdf

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 603 pages
File Size : 50,5 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236

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III–V Compound Semiconductors by Tingkai Li,Michael Mastro,Armin Dadgar Pdf

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

Author : Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou
Publisher : Springer Nature
Page : 65 pages
File Size : 40,6 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020285

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Compound Semiconductor Materials and Devices by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou Pdf

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 42,7 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474

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Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky,Peide Ye Pdf

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Author : H. Craig Casey
Publisher : John Wiley & Sons
Page : 549 pages
File Size : 52,9 Mb
Release : 1998-12-14
Category : Technology & Engineering
ISBN : 9780471171348

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Devices for Integrated Circuits by H. Craig Casey Pdf

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
Page : 188 pages
File Size : 43,7 Mb
Release : 2008-11-21
Category : Technology & Engineering
ISBN : 9783527611775

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Compound Semiconductor Devices by Kenneth A. Jackson Pdf

Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.

Author : S J Pearton,C R Abernathy,F Ren
Publisher : World Scientific
Page : 560 pages
File Size : 43,6 Mb
Release : 1996-11-09
Category : Technology & Engineering
ISBN : 9789814501590

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Topics in Growth and Device Processing of III-V Semiconductors by S J Pearton,C R Abernathy,F Ren Pdf

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems. Contents:Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect Transistors Readership: Engineers and condensed matter physicists. keywords:Arsenide;Indium Phosphide;Processing;Semiconductors;Etching;Implantation;Contacts;Implant Isolation;Field Effect Transistors;GaAs-on-Si

Author : S. J. Pearton,D. K. Sadana,J. M. Zavada
Publisher : Mrs Proceedings
Page : 944 pages
File Size : 52,7 Mb
Release : 1992-04-10
Category : Technology & Engineering
ISBN : UOM:39015025210652

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Advanced III-V Compound Semiconductor Growth, Processing and Devices: Volume 240 by S. J. Pearton,D. K. Sadana,J. M. Zavada Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : Paul H. Holloway,Gary E. McGuire
Publisher : Cambridge University Press
Page : 937 pages
File Size : 54,9 Mb
Release : 2008-10-19
Category : Technology & Engineering
ISBN : 9780080946146

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Handbook of Compound Semiconductors by Paul H. Holloway,Gary E. McGuire Pdf

This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

Author : R.J. Malik
Publisher : Elsevier
Page : 740 pages
File Size : 46,5 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780444596352

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III-V Semiconductor Materials and Devices by R.J. Malik Pdf

The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 43,5 Mb
Release : 1992-11-10
Category : Science
ISBN : 0471573299

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Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Author : Osamu Ueda
Publisher : Artech House Publishers
Page : 376 pages
File Size : 43,7 Mb
Release : 1996
Category : Science
ISBN : UOM:39015038140292

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Reliability and Degradation of III-V Optical Devices by Osamu Ueda Pdf

In developing III-V optical devices for use in optical fiber communication systems, digital-audio systems, and optical printers, reliability is paramount. Understanding the origins and causes of degradation is critical to successful design. This unique book focuses specifically on helping researchers and engineers involved in III-V compound semiconductor thin film growth and processing better understand the mechanism of degradation and details the major degradation modes of optical devices fabricated from three different systems. The book explains the character of defects and imperfections induced during material growth and fabrication, presents techniques for failure analysis, and describes methods for elimination of defect-generating mechanisms. More than 200 illustrations and 40 equations help clarify important concepts.

Author : Oda Osamu
Publisher : World Scientific
Page : 408 pages
File Size : 45,6 Mb
Release : 2012-10-31
Category : Science
ISBN : 9789814449199

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Compound Semiconductor Bulk Materials And Characterizations by Oda Osamu Pdf

This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.