Physics Of Submicron Devices

Author : Harold L. Grubin,David K. Ferry,C. Jacoboni
Publisher : Springer Science & Business Media
Page : 729 pages
File Size : 53,7 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781489923820

Get Book

The Physics of Submicron Semiconductor Devices by Harold L. Grubin,David K. Ferry,C. Jacoboni Pdf

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Author : David K. Ferry,Robert O. Grondin
Publisher : Springer Science & Business Media
Page : 409 pages
File Size : 51,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461532842

Get Book

Physics of Submicron Devices by David K. Ferry,Robert O. Grondin Pdf

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.

Author : David K Ferry,Robert O Grondin
Publisher : Unknown
Page : 420 pages
File Size : 55,6 Mb
Release : 1991-11-01
Category : Electronic
ISBN : 146153285X

Get Book

Physics of Submicron Devices by David K Ferry,Robert O Grondin Pdf

Author : Harold L. Grubin
Publisher : Springer Science & Business Media
Page : 349 pages
File Size : 44,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461327776

Get Book

The Physics of Submicron Structures by Harold L. Grubin Pdf

Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.

Author : Kamil A. Valiev
Publisher : Springer
Page : 493 pages
File Size : 52,7 Mb
Release : 2012-09-27
Category : Science
ISBN : 1461364612

Get Book

The Physics of Submicron Lithography by Kamil A. Valiev Pdf

This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.

Author : Wim Magnus,Wim Schoenmaker
Publisher : Springer Science & Business Media
Page : 270 pages
File Size : 46,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642561337

Get Book

Quantum Transport in Submicron Devices by Wim Magnus,Wim Schoenmaker Pdf

The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices. Along the road, readers encounter landmarks in theoretical physics as the authors guide them through the strong and weak aspects of various hypotheses.

Author : Andrew J. Walker
Publisher : Unknown
Page : 202 pages
File Size : 46,7 Mb
Release : 1994
Category : Electronic
ISBN : 907444508X

Get Book

The Physics and Technology of Submicron MOS Devices by Andrew J. Walker Pdf

Author : A.-P. Jauho,Eugenia V. Buzaneva
Publisher : Springer Science & Business Media
Page : 576 pages
File Size : 44,7 Mb
Release : 1996-10-31
Category : Technology & Engineering
ISBN : 0792343018

Get Book

Frontiers in Nanoscale Science of Micron/Submicron Devices by A.-P. Jauho,Eugenia V. Buzaneva Pdf

Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.

Author : Patrick Roblin,Hans Rohdin
Publisher : Cambridge University Press
Page : 726 pages
File Size : 40,8 Mb
Release : 2002-03-07
Category : Technology & Engineering
ISBN : 9781139437462

Get Book

High-Speed Heterostructure Devices by Patrick Roblin,Hans Rohdin Pdf

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Author : Ashish Raman,Deep Shekhar,Naveen Kumar
Publisher : CRC Press
Page : 410 pages
File Size : 49,5 Mb
Release : 2022-05-10
Category : Technology & Engineering
ISBN : 9781000577235

Get Book

Sub-Micron Semiconductor Devices by Ashish Raman,Deep Shekhar,Naveen Kumar Pdf

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

Author : Takahiko Misugi,Akihiro Shibatomi
Publisher : Springer Science & Business Media
Page : 311 pages
File Size : 53,6 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781475797749

Get Book

Compound and Josephson High-Speed Devices by Takahiko Misugi,Akihiro Shibatomi Pdf

In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.

Author : Stuart K. Tewksbury
Publisher : Springer Science & Business Media
Page : 394 pages
File Size : 50,5 Mb
Release : 2012-12-06
Category : Computers
ISBN : 9781461306337

Get Book

Frontiers of Computing Systems Research by Stuart K. Tewksbury Pdf

Computing systems researchers confront two serious problems. (1) The increasingly monolithic, or pseudo-monolithic, integration of complex com puting functions and systems imposes an environment which integrates ad vanced principles and techniques from a broad variety of fields. Researchers not only must confront the increased complexity of topics in their specialty field but also must develop a deeper general understanding of a broadening number of fields. (2) There has been a proliferation of journals, books, workshops and conferences through which research results are reported. Remaining familiar with recent advances in our specific fields is a major challenge. Casually browsing through journals and conference proceedings to remain aware of developments in areas outside our specialization has become an even greater challenge. Frontiers of Computing Systems Research has been established to ad dress these two issues. With the assistance of an advisory board of experts from a wide variety of specialized areas, we hope to provide roughly annual volumes of invited chapters on a broad range of topics and designed for an interdisciplinary research audience. No single volume can cover all the rel evant topics and no single article can convey the full set of directions being pursued within a given topic. For this reason, a chapter listing technical reports available from universities is also included. Often, such unpub lished reports are designed for a general research audience and provide a good, informal look at trends in specialized research topics.

Author : Kamil A. Valiev
Publisher : Springer Science & Business Media
Page : 502 pages
File Size : 47,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461533184

Get Book

The Physics of Submicron Lithography by Kamil A. Valiev Pdf

This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.

Author : Carlo Jacoboni,Paolo Lugli
Publisher : Springer Science & Business Media
Page : 370 pages
File Size : 52,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709169636

Get Book

The Monte Carlo Method for Semiconductor Device Simulation by Carlo Jacoboni,Paolo Lugli Pdf

This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Author : Harold L Grubin
Publisher : Unknown
Page : 376 pages
File Size : 41,8 Mb
Release : 1984-10-01
Category : Electronic
ISBN : 1461327784

Get Book

The Physics of Submicron Structures by Harold L Grubin Pdf