Power Transistors

Author : Tobias Erlbacher
Publisher : Springer
Page : 235 pages
File Size : 54,8 Mb
Release : 2014-10-08
Category : Technology & Engineering
ISBN : 9783319005003

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Lateral Power Transistors in Integrated Circuits by Tobias Erlbacher Pdf

The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Author : Achim Seidel,Bernhard Wicht
Publisher : Springer Nature
Page : 137 pages
File Size : 42,6 Mb
Release : 2021-03-31
Category : Technology & Engineering
ISBN : 9783030689407

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Highly Integrated Gate Drivers for Si and GaN Power Transistors by Achim Seidel,Bernhard Wicht Pdf

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​

Author : David L. Blackburn
Publisher : Unknown
Page : 24 pages
File Size : 53,8 Mb
Release : 1977
Category : Power transistors
ISBN : UCR:31210023555665

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Safe Operating Area Limits for Power Transistors by David L. Blackburn Pdf

Author : Francis Gourash
Publisher : Unknown
Page : 50 pages
File Size : 51,6 Mb
Release : 1969
Category : Bridge circuits
ISBN : UIUC:30112106776583

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Analysis and Design of Inductors for Protecting Power Transistors Against Current Surges in Inverter Bridge Circuits by Francis Gourash Pdf

Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 338 pages
File Size : 42,8 Mb
Release : 1998
Category : Technology & Engineering
ISBN : 1566772222

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Compound Semiconductor Power Transistors and by Electrochemical Society. Meeting Pdf

Author : Alex Lidow,Johan Strydom,Michael de Rooij,David Reusch
Publisher : John Wiley & Sons
Page : 266 pages
File Size : 54,7 Mb
Release : 2014-09-15
Category : Science
ISBN : 9781118844762

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GaN Transistors for Efficient Power Conversion by Alex Lidow,Johan Strydom,Michael de Rooij,David Reusch Pdf

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

Author : Helge Granberg
Publisher : Elsevier
Page : 244 pages
File Size : 55,8 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9780080571430

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Radio Frequency Transistors by Helge Granberg Pdf

Cellular telephones, satellite communications and radar systems are adding to the increasing demand for radio frequency circuit design principles. At the same time, several generations of digitally-oriented graduates are missing the essential RF skills. This book contains a wealth of valuable design information difficult to find elsewhere. It's a complete 'tool kit' for successful RF circuit design. Written by experienced RF design engineers from Motorola's semiconductors product section.Book covers design examples of circuits (e.g. amplifiers; oscillators; switches; pulsed power; modular systems; wiring state-of-the-art devices; design techniques).

Author : Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser
Publisher : John Wiley & Sons
Page : 384 pages
File Size : 46,6 Mb
Release : 2019-08-23
Category : Science
ISBN : 9781119594376

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GaN Transistors for Efficient Power Conversion by Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser Pdf

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Author : Raj, Balwinder,Khosla, Mamta,Singh, Amandeep
Publisher : IGI Global
Page : 255 pages
File Size : 40,7 Mb
Release : 2019-12-06
Category : Technology & Engineering
ISBN : 9781799813958

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Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) by Raj, Balwinder,Khosla, Mamta,Singh, Amandeep Pdf

With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.

Author : Ranbir Singh,B. Jayant Baliga
Publisher : Springer Science & Business Media
Page : 158 pages
File Size : 54,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461557517

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Cryogenic Operation of Silicon Power Devices by Ranbir Singh,B. Jayant Baliga Pdf

The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.

Author : E. J. M. Kendall
Publisher : Elsevier
Page : 340 pages
File Size : 42,7 Mb
Release : 2016-06-23
Category : Science
ISBN : 9781483138503

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Transistors by E. J. M. Kendall Pdf

Transistors reviews major advances that have been made with respect to transistors and illustrates some of the many facets of transistor research and development. Topics covered range from point contact devices and junction devices to p-n junctions in semiconductors, unipolar and analog transistors, and hole injection in transistor action. The physical principles involved in transistor action are also discussed, along with the nature of the forward current in germanium point contacts. This book is comprised of 19 papers and begins with a summary of the semiconductor physics pertinent to the understanding of transistors. The reader is then introduced to developments in point contact devices and junction devices; how the conductance of thin films of semiconductors is modulated by surface charges; the relation between surface states and rectification at a metal-semiconductor contact; and a three-element electronic device that utilizes a semiconductor as the basic element. The remaining papers focus on p-n junction transistors; the theory of alpha for p-n-p diffused junction transistors; and unipolar and analog transistors. The effects of electrical forming on the rectifying barriers of n- and p-germanium transistors are also analyzed. The final chapter describes a thin-film transistor fabricated by evaporation of all components onto an insulating substrate. This monograph will be of interest to physicists and electronics engineers.

Author : B. Jayant Baliga,Dan Y. Chen
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Page : 434 pages
File Size : 47,9 Mb
Release : 1984
Category : Technology & Engineering
ISBN : STANFORD:36105030604420

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Power Transistors by B. Jayant Baliga,Dan Y. Chen Pdf

Author : David L. Pulfrey
Publisher : Cambridge University Press
Page : 355 pages
File Size : 53,5 Mb
Release : 2010-01-28
Category : Technology & Engineering
ISBN : 9781139484671

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Understanding Modern Transistors and Diodes by David L. Pulfrey Pdf

Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses

Author : John M. Hardy,Douglas R. Long
Publisher : Unknown
Page : 168 pages
File Size : 51,8 Mb
Release : 1985
Category : Cryptography
ISBN : MINN:30000010492548

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Electronic cryptographic communications equipment specialist (AFSC 30650). by John M. Hardy,Douglas R. Long Pdf

Author : K. Sivasankaran,Partha Sharathi Mallick
Publisher : Springer Nature
Page : 98 pages
File Size : 53,5 Mb
Release : 2023-03-27
Category : Computers
ISBN : 9789819901579

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Multigate Transistors for High Frequency Applications by K. Sivasankaran,Partha Sharathi Mallick Pdf

This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.