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Author : R. F. Kopf,A. G. Baca,S. N. G. Chu
Publisher : The Electrochemical Society
Page : 368 pages
File Size : 51,6 Mb
Release : 2000
Category : Technology & Engineering
ISBN : 1566772664
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 338 pages
File Size : 43,7 Mb
Release : 1998
Category : Technology & Engineering
ISBN : 1566772222
Author : Anonim
Publisher : Unknown
Page : 354 pages
File Size : 40,6 Mb
Release : 2000
Category : Compound semiconductors
ISBN : OCLC:1319193475
Author : Tho T. Vu
Publisher : World Scientific
Page : 363 pages
File Size : 46,7 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 9789812383112
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Author : Sandip Tiwari
Publisher : Academic Press
Page : 845 pages
File Size : 54,7 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483289298
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 49,7 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author : H. Craig Casey
Publisher : John Wiley & Sons
Page : 549 pages
File Size : 47,9 Mb
Release : 1998-12-14
Category : Technology & Engineering
ISBN : 9780471171348
This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
Author : Michael Shur
Publisher : World Scientific
Page : 388 pages
File Size : 44,8 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810223250
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Author : Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou
Publisher : Morgan & Claypool Publishers
Page : 75 pages
File Size : 50,6 Mb
Release : 2016-02-22
Category : Technology & Engineering
ISBN : 9781627058537
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Author : Sandip Tiwari
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
Page : 344 pages
File Size : 55,7 Mb
Release : 1993
Category : Compound semiconductors
ISBN : UCSD:31822015555113
Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 48,6 Mb
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 9783030519032
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author : Y Arakawa,Y. Hirayama,K Kishino,H Yamaguchi
Publisher : CRC Press
Page : 888 pages
File Size : 45,6 Mb
Release : 2002-09-30
Category : Science
ISBN : 9781482268980
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Author : D. Nirmal,J. Ajayan,Patrick J. Fay
Publisher : CRC Press
Page : 302 pages
File Size : 41,8 Mb
Release : 2021-12-09
Category : Technology & Engineering
ISBN : 9781000475340
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Author : Tingkai Li,Michael Mastro,Armin Dadgar
Publisher : CRC Press
Page : 588 pages
File Size : 54,7 Mb
Release : 2016-04-19
Category : Science
ISBN : 9781439815236
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
Page : 188 pages
File Size : 52,6 Mb
Release : 2008-11-21
Category : Technology & Engineering
ISBN : 9783527611775
Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.