Proceedings Of The 13th International Conference On Defects In Semiconductors

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International Conference on Defects in Semiconductors 2013

Anna Cavallini,Stefan K. Estreicher
International Conference on Defects in Semiconductors 2013 Book PDF

Author : Anna Cavallini,Stefan K. Estreicher
Publisher : Unknown
Page : 0 pages
File Size : 40,8 Mb
Release : 2014
Category : Semiconductors
ISBN : 1632660458

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International Conference on Defects in Semiconductors 2013 by Anna Cavallini,Stefan K. Estreicher Pdf

Defects in Semiconductors

Anonim
Defects in Semiconductors Book PDF

Author : Anonim
Publisher : Academic Press
Page : 458 pages
File Size : 43,6 Mb
Release : 2015-06-08
Category : Science
ISBN : 9780128019405

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Defects in Semiconductors by Anonim Pdf

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Hydrogen in Semiconductors

Jacques I. Pankove,Noble M. Johnson
Hydrogen in Semiconductors Book PDF

Author : Jacques I. Pankove,Noble M. Johnson
Publisher : Academic Press
Page : 648 pages
File Size : 52,6 Mb
Release : 1991-04-23
Category : Technology & Engineering
ISBN : 0080864317

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Hydrogen in Semiconductors by Jacques I. Pankove,Noble M. Johnson Pdf

Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Proceedings of the 17th International Conference on the Physics of Semiconductors

J.D. Chadi,W.A. Harrison
Proceedings of the 17th International Conference on the Physics of Semiconductors Book PDF

Author : J.D. Chadi,W.A. Harrison
Publisher : Springer Science & Business Media
Page : 1580 pages
File Size : 48,7 Mb
Release : 2013-12-01
Category : Science
ISBN : 9781461576822

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Proceedings of the 17th International Conference on the Physics of Semiconductors by J.D. Chadi,W.A. Harrison Pdf

The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Proceedings of the 16th International Conference on Defects in Semiconductors

Gordon Davies,Gary Gerard DeLeo,Michael Stavola
Proceedings of the 16th International Conference on Defects in Semiconductors Book PDF

Author : Gordon Davies,Gary Gerard DeLeo,Michael Stavola
Publisher : Unknown
Page : 572 pages
File Size : 52,6 Mb
Release : 1992
Category : Semiconductors
ISBN : UVA:X002023881

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Proceedings of the 16th International Conference on Defects in Semiconductors by Gordon Davies,Gary Gerard DeLeo,Michael Stavola Pdf