Download Full eBooks in PDF
Proceedings Of The 27th International Conference On Defects In Semiconductors Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Proceedings Of The 27th International Conference On Defects In Semiconductors book. This book definitely worth reading, it is an incredibly well-written.
Author : Anna Cavallini,Stefan K. Estreicher
Publisher : Unknown
Page : 0 pages
File Size : 48,9 Mb
Release : 2014
Category : Semiconductors
ISBN : 1632660458
Author : Anna Cavallini,Stefan K. Estreicher
Publisher : Unknown
Page : 375 pages
File Size : 44,5 Mb
Release : 2014
Category : Semiconductors
ISBN : OCLC:960176950
Author : H. J. von Bardeleben
Publisher : Unknown
Page : 450 pages
File Size : 51,8 Mb
Release : 1986
Category : Semiconductors
ISBN : UVA:X001114650
Author : Helmut Heinrich,Wolfgang Jantsch
Publisher : Unknown
Page : 0 pages
File Size : 47,7 Mb
Release : 1994
Category : Semiconductors
ISBN : 0878496718
Author : David J Lockwood
Publisher : World Scientific
Page : 2858 pages
File Size : 54,9 Mb
Release : 1995-01-20
Category : Electronic
ISBN : 9789814550154
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author : Gordon Davies,Gary Gerard DeLeo,Michael Stavola
Publisher : Unknown
Page : 572 pages
File Size : 49,7 Mb
Release : 1992
Category : Semiconductors
ISBN : UVA:X002023881
Author : L.. Degiorgi
Publisher : Unknown
Page : 1181 pages
File Size : 48,7 Mb
Release : 2003
Category : Semiconductors
ISBN : OCLC:900865744
Author : Peter Pichler
Publisher : Springer Science & Business Media
Page : 576 pages
File Size : 42,9 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709105979
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Masashi Suezawa
Publisher : Unknown
Page : 660 pages
File Size : 43,9 Mb
Release : 1995
Category : Semiconductors
ISBN : UVA:X002569566
Author : György Ferenczi
Publisher : Unknown
Page : 552 pages
File Size : 41,9 Mb
Release : 1989
Category : Semiconductors
ISBN : UVA:X001423780
Author : György Ferenczi
Publisher : Unknown
Page : 496 pages
File Size : 49,7 Mb
Release : 1989
Category : Materials
ISBN : UVA:X001423782
Materials Science Forum Vols. 38-41.
Author : Masashi Suezawa,Hiroshi Katayama-Yoshida
Publisher : Unknown
Page : 666 pages
File Size : 44,9 Mb
Release : 1995
Category : Semiconductors
ISBN : UOM:39015035263261
Author : P.-E. Lippens,J.-C. Jumas,J.-M.R. Génin
Publisher : Springer Science & Business Media
Page : 642 pages
File Size : 42,7 Mb
Release : 2010-04-15
Category : Science
ISBN : 9783540498537
This book provides an up-to-date overview of the Mössbauer effect in physics, chemistry, electrochemistry, catalysis, biology, medicine, geology, mineralogy, archaeology and materials science. Coverage details the most recent developments of the technique especially in the fields of nanoparticles, thin films, surfaces, interfaces, magnetism, experimentation, theory, medical and industrial applications and Mars exploration.
Author : Moumita Mukherjee
Publisher : BoD – Books on Demand
Page : 562 pages
File Size : 53,6 Mb
Release : 2011-10-10
Category : Technology & Engineering
ISBN : 9789533079684
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Author : Gordon Davies,G.G. DeLeo,M. Stavola
Publisher : Trans Tech Publications Ltd
Page : 1634 pages
File Size : 47,9 Mb
Release : 1992-01-01
Category : Technology & Engineering
ISBN : 9783035704600
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .