Si Silicon

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Silicon Polymers

Author : Aziz M. Muzafarov
Publisher : Springer
Page : 234 pages
File Size : 52,7 Mb
Release : 2010-10-14
Category : Technology & Engineering
ISBN : 9783642160486

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Silicon Polymers by Aziz M. Muzafarov Pdf

Modern Synthetic and Application Aspects of Polysilanes: An Underestimated Class of Materials?, by A. Feigl, A. Bockholt, J. Weis, and B. Rieger; * Conjugated Organosilicon Materials for Organic Electronics and Photonics, by Sergei A. Ponomarenko and Stephan Kirchmeyer; * Polycarbosilanes Based on Silicon-Carbon Cyclic Monomers, by E.Sh. Finkelshtein, N.V. Ushakov, and M.L. Gringolts; * New Synthetic Strategies for Structured Silicones Using B(C6F5)3, by Michael A. Brook, John B. Grande, and François Ganachaud; * Polyhedral Oligomeric Silsesquioxanes with Controlled Structure: Formation and Application in New Si-Based Polymer Systems, by Yusuke Kawakami, Yuriko Kakihana, Akio Miyazato, Seiji Tateyama, and Md. Asadul Hoque;

Semiconductor Silicon 1977

Author : Howard R. Huff,Erhard Sirtl
Publisher : Unknown
Page : 1170 pages
File Size : 51,5 Mb
Release : 1977
Category : Semiconductors
ISBN : CORNELL:31924004734145

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Semiconductor Silicon 1977 by Howard R. Huff,Erhard Sirtl Pdf

Functional Molecular Silicon Compounds II

Author : David Scheschkewitz
Publisher : Springer
Page : 232 pages
File Size : 44,8 Mb
Release : 2014-07-08
Category : Science
ISBN : 9783319037349

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Functional Molecular Silicon Compounds II by David Scheschkewitz Pdf

The series Structure and Bonding publishes critical reviews on topics of research concerned with chemical structure and bonding. The scope of the series spans the entire Periodic Table and addresses structure and bonding issues associated with all of the elements. It also focuses attention on new and developing areas of modern structural and theoretical chemistry such as nanostructures, molecular electronics, designed molecular solids, surfaces, metal clusters and supramolecular structures. Physical and spectroscopic techniques used to determine, examine and model structures fall within the purview of Structure and Bonding to the extent that the focus is on the scientific results obtained and not on specialist information concerning the techniques themselves. Issues associated with the development of bonding models and generalizations that illuminate the reactivity pathways and rates of chemical processes are also relevant. The individual volumes in the series are thematic. The goal of each volume is to give the reader, whether at a university or in industry, a comprehensive overview of an area where new insights are emerging that are of interest to a larger scientific audience. Thus each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years should be presented using selected examples to illustrate the principles discussed. A description of the physical basis of the experimental techniques that have been used to provide the primary data may also be appropriate, if it has not been covered in detail elsewhere. The coverage need not be exhaustive in data, but should rather be conceptual, concentrating on the new principles being developed that will allow the reader, who is not a specialist in the area covered, to understand the data presented. Discussion of possible future research directions in the area is welcomed. Review articles for the individual volumes are invited by the volume editors. Readership: research scientists at universities or in industry, graduate students Special offer for all customers who have a standing order to the print version of Structure and Bonding, we offer free access to the electronic volumes of the Series published in the current year via SpringerLink.

Silicon Nanophotonics

Author : Leonid Khriachtchev
Publisher : CRC Press
Page : 522 pages
File Size : 42,7 Mb
Release : 2016-10-26
Category : Science
ISBN : 9781315341132

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Silicon Nanophotonics by Leonid Khriachtchev Pdf

Photonics is a key technology of this century. The combination of photonics and silicon technology is of great importance because of the potentiality of coupling electronics and optical functions on a single chip. Many experimental and theoretical studies have been performed to understand and design the photonic properties of silicon nanocrystals. Generation of light in silicon is a challenging perspective in the field; however, the issue of light-emitting devices does not limit the activity in the field. Research is also focused on light modulators, optical waveguides and interconnectors, optical amplifiers, detectors, memory elements, photonic crystals, etc. A particularly important task of silicon nanostructures is to generate electrical energy from solar light. Understanding the optical properties of silicon-based materials is central in designing photonic components. It is not possible to control the optical properties of nanoparticles without fundamental information on their microscopic structure, which explains a large number of theoretical works on this subject. Many fundamental and practical problems should be solved in order to develop this technology. In addition to open fundamental questions, it is even more difficult to develop the known experimental results towards practical realization. However, the world market for silicon photonics is expected to be huge; thus, more research activity in the field of silicon nanophotonics is expected in the future. This book describes different aspects of silicon nanophotonics, from fundamental issues to practical devices. The second edition is essentially different from the book published in 2008. Eight chapters of the first edition are not included in the new book, because the recent progress on those topics has not been large enough. Instead, seven new chapters appear. The other eight chapters are essentially modified to describe recent achievements in the field.

Silicon Surfaces and Formation of Interfaces

Author : Jarek Dabrowski,Hans-Joachim Mssig
Publisher : World Scientific
Page : 580 pages
File Size : 49,7 Mb
Release : 2000
Category : Science
ISBN : 9810232861

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Silicon Surfaces and Formation of Interfaces by Jarek Dabrowski,Hans-Joachim Mssig Pdf

Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Silicon Photonics

Author : Lorenzo Pavesi
Publisher : Springer Science & Business Media
Page : 424 pages
File Size : 54,8 Mb
Release : 2004-03-04
Category : Science
ISBN : 3540210229

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Silicon Photonics by Lorenzo Pavesi Pdf

This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.

Silicon-on-Insulator Technology

Author : J.-P. Colinge
Publisher : Springer Science & Business Media
Page : 236 pages
File Size : 52,6 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9781475721218

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Silicon-on-Insulator Technology by J.-P. Colinge Pdf

5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Silicon in Agriculture

Author : L.E. Datnoff,G.H. Snyder,G.H. Korndörfer
Publisher : Elsevier
Page : 424 pages
File Size : 50,7 Mb
Release : 2001-04-11
Category : Technology & Engineering
ISBN : 0080541224

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Silicon in Agriculture by L.E. Datnoff,G.H. Snyder,G.H. Korndörfer Pdf

Presenting the first book to focus on the importance of silicon for plant health and soil productivity and on our current understanding of this element as it relates to agriculture. Long considered by plant physiologists as a non-essential element, or plant nutrient, silicon was the center of attention at the first international conference on Silicon in Agriculture, held in Florida in 1999. Ninety scientists, growers, and producers of silicon fertilizer from 19 countries pondered a paradox in plant biology and crop science. They considered the element Si, second only to oxygen in quantity in soils, and absorbed by many plants in amounts roughly equivalent to those of such nutrients as sulfur or magnesium. Some species, including such staples as rice, may contain this element in amounts as great as or even greater than any other inorganic constituent. Compilations of the mineral composition of plants, however, and much of the plant physiological literature largely ignore this element. The participants in Silicon in Agriculture explored that extraordinary discrepancy between the silicon content of plants and that of the plant research enterprise. The participants, all of whom are active in agricultural science, with an emphasis on crop production, presented, and were presented with, a wealth of evidence that silicon plays a multitude of functions in the real world of plant life. Many soils in the humid tropics are low in plant available silicon, and the same condition holds in warm to hot humid areas elsewhere. Field experience, and experimentation even with nutrient solutions, reveals a multitude of functions of silicon in plant life. Resistance to disease is one, toleration of toxic metals such as aluminum, another. Silicon applications often minimize lodging of cereals (leaning over or even becoming prostrate), and often cause leaves to assume orientations more favorable for light interception. For some crops, rice and sugarcane in particular, spectacular yield responses to silicon application have been obtained. More recently, other crop species including orchids, daisies and yucca were reported to respond to silicon accumulation and plant growth/disease control. The culture solutions used for the hydroponic production of high-priced crops such as cucumbers and roses in many areas (The Netherlands for example) routinely included silicon, mainly for disease control. The biochemistry of silicon in plant cell walls, where most of it is located, is coming increasingly under scrutiny; the element may act as a crosslinking element between carbohydrate polymers. There is an increased conviction among scientists that the time is at hand to stop treating silicon as a plant biological nonentity. The element exists, and it matters.

Porous Silicon

Author : Zhe Chuan Feng,Raphael Tsu
Publisher : World Scientific
Page : 496 pages
File Size : 42,7 Mb
Release : 1994
Category : Science
ISBN : 9810216343

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Porous Silicon by Zhe Chuan Feng,Raphael Tsu Pdf

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 eV, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, µc-Si), device applications, future developments.

Efficient Methods for Preparing Silicon Compounds

Author : Herbert W Roesky
Publisher : Academic Press
Page : 538 pages
File Size : 46,6 Mb
Release : 2016-05-12
Category : Science
ISBN : 9780128035689

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Efficient Methods for Preparing Silicon Compounds by Herbert W Roesky Pdf

Efficient Methods for Preparing Silicon Compounds is a unique and valuable handbook for chemists and students involved in advanced studies of preparative chemistry in academia and industry. Organized by the various coordination numbers (from two to six) of the central silicon atom of the reported compounds, this book provides researchers with a handy and immediate reference for any compound or properties needed in the area. Edited by a renowned expert in the field, each chapter explores a different type of compound, thoroughly illustrated with useful schemes and supplemented by additional references. Knowledgeable contributors report on a broad range of compounds on which they have published and which are already used on a broad scale or have the potential to be used in the very near future to develop a new field of research or application in silicon chemistry. Includes contributions and edits from leading experts in the field Includes detailed chemical schemes and useful references for each preparative method Organized by the coordination numbers of the central silicon atom for each compound for easy navigation Serves as a go-to primer for researchers in novel compositions of silicon matter

Solar Silicon Processes

Author : Bruno Ceccaroli,Eivind Ovrelid,Sergio Pizzini
Publisher : CRC Press
Page : 273 pages
File Size : 45,6 Mb
Release : 2016-10-03
Category : Technology & Engineering
ISBN : 9781498742665

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Solar Silicon Processes by Bruno Ceccaroli,Eivind Ovrelid,Sergio Pizzini Pdf

Polycrystalline silicon (commonly called "polysilicon") is the material of choice for photovoltaic (PV) applications. Polysilicon is the purest synthetic material on the market, though its processing through gas purification and decomposition (commonly called "Siemens" process) carries high environmental risk. While many current optoelectronic applications require high purity, PV applications do not and therefore alternate processes and materials are being explored for PV grade silicon. Solar Silicon Processes: Technologies, Challenges, and Opportunities reviews current and potential future processing technologies for PV applications of solar silicon. It describes alternative processes and issues of material purity, cost, and environmental impact. It covers limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. The book also defines purity requirements and purification processes of metallurgical grade silicon (MG-Si) and examines production of solar grade silicon by novel processes directly from MG-Si and/or by decomposition of silane gas in a fluidized bed reactor (FBR). Furthermore, the book: Analyzes past research and industrial development of low-cost silicon processes in view of understanding future trends in this field. Discusses challenges and probability of success of various solar silicon processes. Covers processes that are more environmentally sensitive. Describes limits of silicon use with respect to high-efficiency solar cells and challenges arising from R&D activities. Defines purity requirements and purification processes of MG-Si. Examines production of solar grade silicon directly from MG-Si.

Silicon Carbide

Author : Moumita Mukherjee
Publisher : BoD – Books on Demand
Page : 562 pages
File Size : 40,5 Mb
Release : 2011-10-10
Category : Technology & Engineering
ISBN : 9789533079684

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Silicon Carbide by Moumita Mukherjee Pdf

Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three

Author : Ghenadii Korotcenkov
Publisher : CRC Press
Page : 431 pages
File Size : 41,9 Mb
Release : 2016-01-06
Category : Science
ISBN : 9781482264593

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Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three by Ghenadii Korotcenkov Pdf

Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a

Silicon-Molecular Beam Epitaxy

Author : E. Kasper
Publisher : CRC Press
Page : 274 pages
File Size : 40,9 Mb
Release : 2018-05-04
Category : Technology & Engineering
ISBN : 9781351093514

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Silicon-Molecular Beam Epitaxy by E. Kasper Pdf

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Encyclopedia of Spectroscopy and Spectrometry

Author : Anonim
Publisher : Academic Press
Page : 3716 pages
File Size : 48,7 Mb
Release : 2016-09-22
Category : Science
ISBN : 9780128032251

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Encyclopedia of Spectroscopy and Spectrometry by Anonim Pdf

This third edition of the Encyclopedia of Spectroscopy and Spectrometry, Three Volume Set provides authoritative and comprehensive coverage of all aspects of spectroscopy and closely related subjects that use the same fundamental principles, including mass spectrometry, imaging techniques and applications. It includes the history, theoretical background, details of instrumentation and technology, and current applications of the key areas of spectroscopy. The new edition will include over 80 new articles across the field. These will complement those from the previous edition, which have been brought up-to-date to reflect the latest trends in the field. Coverage in the third edition includes: Atomic spectroscopy Electronic spectroscopy Fundamentals in spectroscopy High-Energy spectroscopy Magnetic resonance Mass spectrometry Spatially-resolved spectroscopic analysis Vibrational, rotational and Raman spectroscopies The new edition is aimed at professional scientists seeking to familiarize themselves with particular topics quickly and easily. This major reference work continues to be clear and accessible and focus on the fundamental principles, techniques and applications of spectroscopy and spectrometry. Incorporates more than 150 color figures, 5,000 references, and 300 articles for a thorough examination of the field Highlights new research and promotes innovation in applied areas ranging from food science and forensics to biomedicine and health Presents a one-stop resource for quick access to answers and an in-depth examination of topics in the spectroscopy and spectrometry arenas