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Author : Howard R. Huff,Erhard Sirtl
Publisher : Unknown
Page : 1170 pages
File Size : 51,5 Mb
Release : 1977
Category : Semiconductors
ISBN : CORNELL:31924004734145
Author : Anonim
Publisher : Unknown
Page : 1100 pages
File Size : 40,5 Mb
Release : 1977
Category : Electronic
ISBN : OCLC:630918537
Author : Howard R. Huff,Erhard Sirtl
Publisher : Unknown
Page : 1100 pages
File Size : 46,9 Mb
Release : 1977
Category : Semiconductors
ISBN : 0783756461
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
Page : 800 pages
File Size : 51,9 Mb
Release : 2015-06-29
Category : Technology & Engineering
ISBN : 9780471739067
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Fumio Shimura
Publisher : Elsevier
Page : 435 pages
File Size : 42,5 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323150484
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Author : Howard R. Huff,Rudolph J. Kriegler,Yoshiyuki Takeishi
Publisher : Unknown
Page : 1076 pages
File Size : 53,7 Mb
Release : 1981
Category : Semiconductors
ISBN : CORNELL:31924004820746
Author : Anonim
Publisher : Unknown
Page : 1146 pages
File Size : 41,7 Mb
Release : 1986
Category : Semiconductors
ISBN : UCAL:B4492024
Author : Howard R. Huff,László Fábry,Seigo Kishino
Publisher : The Electrochemical Society
Page : 650 pages
File Size : 51,5 Mb
Release : 2002
Category : Semiconductors
ISBN : 1566773741
Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 48 pages
File Size : 40,9 Mb
Release : 1979
Category : Integrated circuits
ISBN : STANFORD:36105131570728
Author : National Institute of Standards and Technology (U.S.)
Publisher : Unknown
Page : 128 pages
File Size : 43,6 Mb
Release : 1990
Category : Semiconductors
ISBN : PURD:32754061209866
Author : Murray W.. Bullis,J. Franklin Mayo-Wells
Publisher : Unknown
Page : 84 pages
File Size : 45,9 Mb
Release : 1978
Category : Semiconductors
ISBN : UIUC:30112104076689
Author : Hisham Z. Massoud
Publisher : The Electrochemical Society
Page : 686 pages
File Size : 41,7 Mb
Release : 1997
Category : Computers
ISBN : 1566771307
Author : K. V. Ravi
Publisher : John Wiley & Sons
Page : 408 pages
File Size : 41,9 Mb
Release : 1981
Category : Semiconductors
ISBN : UOM:39015002917170
Author : Anonim
Publisher : Unknown
Page : 88 pages
File Size : 44,6 Mb
Release : 1978
Category : Weights and measures
ISBN : MINN:30000010246944
Author : J. Zemel
Publisher : Springer Science & Business Media
Page : 791 pages
File Size : 49,8 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781475713527
From September 19-29, a NATO Advanced Study Institute on Non destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub stantial immediate concern to the device technologies and end users.
