Site Characterization And Aggregation Of Implanted Atoms In Materials

Author : A. Perez,R. Coussement
Publisher : Springer Science & Business Media
Page : 518 pages
File Size : 42,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468410150

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Site Characterization and Aggregation of Implanted Atoms in Materials by A. Perez,R. Coussement Pdf

Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.

Author : H. Ryssel,H. Glawischnig
Publisher : Springer Science & Business Media
Page : 377 pages
File Size : 53,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642687792

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Ion Implantation Techniques by H. Ryssel,H. Glawischnig Pdf

In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Author : D M Adams,E A V Ebsworth
Publisher : Royal Society of Chemistry
Page : 432 pages
File Size : 48,7 Mb
Release : 2007-10-31
Category : Science
ISBN : 9781847554987

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Spectroscopic Properties of Inorganic and Organometallic Compounds by D M Adams,E A V Ebsworth Pdf

Spectroscopic Properties of Inorganic and Organometallic Compounds provides a unique source of information on an important area of chemistry. Divided into sections mainly according to the particular spectroscopic technique used, coverage in each volume includes: NMR (with reference to stereochemistry, dynamic systems, paramagnetic complexes, solid state NMR and Groups 13-18); nuclear quadrupole resonance spectroscopy; vibrational spectroscopy of main group and transition element compounds and coordinated ligands; and electron diffraction. Reflecting the growing volume of published work in this field, researchers will find this Specialist Periodical Report an invaluable source of information on current methods and applications. Specialist Periodical Reports provide systematic and detailed review coverage in major areas of chemical research. Compiled by teams of leading experts in their specialist fields, this series is designed to help the chemistry community keep current with the latest developments in their field. Each volume in the series is published either annually or biennially and is a superb reference point for researchers. www.rsc.org/spr

Author : Leonard C. Feldman,James W. Mayer,Steward T.A. Picraux
Publisher : Academic Press
Page : 321 pages
File Size : 44,7 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323139816

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Materials Analysis by Ion Channeling by Leonard C. Feldman,James W. Mayer,Steward T.A. Picraux Pdf

Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.

Author : Anonim
Publisher : Unknown
Page : 906 pages
File Size : 46,8 Mb
Release : 1993
Category : Power resources
ISBN : MINN:30000006337335

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Energy Research Abstracts by Anonim Pdf

Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Author : R. Kossowsky,S.C. Singhal
Publisher : Springer Science & Business Media
Page : 766 pages
File Size : 50,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9789400962163

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Surface Engineering by R. Kossowsky,S.C. Singhal Pdf

Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.

Author : Sheldon Datz
Publisher : Academic Press
Page : 647 pages
File Size : 41,5 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483218694

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Condensed Matter by Sheldon Datz Pdf

Applied Atomic Collision Physics, Volume 4: Condensed Matter deals with the fundamental knowledge of collision processes in condensed media. The book focuses on the range of applications of atomic collisions in condensed matter, extending from effects on biological systems to the characterization and modification of solids. This volume begins with the description of some aspects of the physics involved in the production of ion beams. The radiation effects in biological and chemical systems, ion scattering and atomic diffraction, x-ray fluorescence analysis, and photoelectron and Auger spectroscopy are discussed in detail. The final two chapters in the text cover two areas of ion beam materials modification: ion implantation in semiconductors and microfabrication. This text is a good reference material for physics graduate students, experimental and theoretical physicists, and chemists.

Author : J.F. Ziegler
Publisher : Elsevier
Page : 649 pages
File Size : 43,5 Mb
Release : 2012-12-02
Category : Science
ISBN : 9780323144018

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Ion Implantation Science and Technology by J.F. Ziegler Pdf

Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Author : M. R. McDowell
Publisher : Springer Science & Business Media
Page : 497 pages
File Size : 48,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461591610

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Atomic and Molecular Processes in Controlled Thermonuclear Fusion by M. R. McDowell Pdf

The NATO Advanced Study Institute on "Atomic and Molecular Processes in Controlled TheI'IllOnuclear Fusion" was held at Chateau de Bonas, Castera-Verduzan, Gel's, France, from 13th to 24th August 1979, and this volume contains the text of the invited lectures. The Institute was supported by the Scientific Affairs Division of NATO, and additional support was received from EURATOM and the United States National Science Foundation. The Institute was attended by 88 scientists, all of whom were active research workers in control of thermonuclear plasmas, 01' atomic and molecular physics, 01' both. In addition to the formal lectures, printed in this volume, which were intended to be pedagogic, more than twenty research seminars were given by participants. The first half of the Institute was directed to introducing atomic and molecular theoretical and experimental physicists to the physics of controlled thermonuclear fusion. Most attention was paid to magnetic confinement, and within that field, to tokamaks. MI'.

Author : Parmod Kumar,Jitendra Pal Singh,Vinod Kumar,K. Asokan
Publisher : Springer Nature
Page : 68 pages
File Size : 47,9 Mb
Release : 2022-02-23
Category : Science
ISBN : 9783030938628

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Ion Beam Induced Defects and Their Effects in Oxide Materials by Parmod Kumar,Jitendra Pal Singh,Vinod Kumar,K. Asokan Pdf

This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.

Author : J.M. Poate,G. Foti,D.C. Jacobson
Publisher : Springer Science & Business Media
Page : 413 pages
File Size : 43,6 Mb
Release : 2013-11-21
Category : Science
ISBN : 9781461337331

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Surface Modification and Alloying by J.M. Poate,G. Foti,D.C. Jacobson Pdf

This book is an outcome of the NATO institute on surface modification which was held in Trevi, 1981. Surface modification and alloying by ion, electron or laser beams is proving to be one of the most burgeoning areas of materials science. The field covers such diverse areas as integrated circuit processing to fabricating wear and corrosion resistant surfaces on mechanical components. The common scientific questions of interest are the microstructures by the different energy deposition techniques. and associated physical properties produced The chapters constitute a critical review of the various subjects covered at Trevi. Each chapter author took responsibility for the overall review and used contributions from the many papers presented at the meeting; each participant gave a presentation. The contributors are listed at the start of each chapter. We took this approach to get some order in a large and diverse field. We are indebted to all the contributors, in particular the chapter authors for working the many papers into coherent packages; to Jim Mayer for hosting a workshop of chapter authors at Cornell and to Ian Bubb who did a sterling job in working over some of the manuscripts. Our special thanks are due to the text processing center at Bell Labs who took on the task of assembling the book. In particular Karen Lieb and Beverly Heravi typed the whole manuscript and had the entire book phototypeset using the Bell Laboratories UNIXTM system.

Author : Jean Bourdon
Publisher : Elsevier
Page : 548 pages
File Size : 48,5 Mb
Release : 2000-04-01
Category : Technology & Engineering
ISBN : 0080954308

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Growth and Properties of Metal Clusters: Applications to Catalysis and the Photographic Process - International Conference Proceedings by Jean Bourdon Pdf

Growth and Properties of Metal Clusters: Applications to Catalysis and the Photographic Process - International Conference Proceedings

Author : U. Gonser
Publisher : Springer Science & Business Media
Page : 206 pages
File Size : 53,9 Mb
Release : 2013-04-18
Category : Science
ISBN : 9783662088678

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Mössbauer Spectroscopy II by U. Gonser Pdf

Some newly discovered effects lose their glamor after a short period of euphoria. Others, however, retain their fascination for a long time and, even as they mature, display unexpected features. The Mossbauer effect belongs to the second category. Rudolf Mossbauer's discovery of recoilless gamma-ray emission in 1957 immediately caused a flurry of attention, and confirming work appeared almost at once. Since then the flow of publications has steadily increased. Most studies follow predict abl e paths; the essential aspects of these "conventional" experiments have been described in the first volume of the present work (Mossbauer Spectroscopy, Topics in Applied Physics, Vol. 5). These straightforward investigations have not, however, exhausted the field, boredom has not set in, and unexpected applications continue to appear. In the present volume, Uli Gonser has collected contributions that display the "exotic" side of the Mossbauer effect. They range from a masterly de scription of the red-shift experiment to a clear exposition of a powerful solution to the old and painful phase problem in crystallography. Each of the contributions exhibits a different side of recoilless gamma-ray emission. Together they show that the field is very much alive and continues to delight us with elegant solutions to old problems, unanticipated glimpses at new phenomena, clever uses of new technical possibilities, and ingenious applications to fields far away from physics. I believe that novel features of the Mossbauer effect will continue to appear and that new applications will still be found.

Author : J. Zemel
Publisher : Springer Science & Business Media
Page : 791 pages
File Size : 52,7 Mb
Release : 2013-11-11
Category : Technology & Engineering
ISBN : 9781475713527

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Nondestructive Evaluation of Semiconductor Materials and Devices by J. Zemel Pdf

From September 19-29, a NATO Advanced Study Institute on Non destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub stantial immediate concern to the device technologies and end users.

Author : Yu M. Kagan,I. S. Lyubutin
Publisher : CRC Press
Page : 488 pages
File Size : 46,6 Mb
Release : 1985
Category : Science
ISBN : 2881240305

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Applications of the Mössbauer Effect: Applications in other fields by Yu M. Kagan,I. S. Lyubutin Pdf